| Semiconductor optoelectronic device and method of fabricating the same J Son, HY Ryu, T Sakong, H Paek, S Lee US Patent 7,724,795, 2010 | 275 | 2010 |
| Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes Q Shan, DS Meyaard, Q Dai, J Cho, E Fred Schubert, J Kon Son, C Sone Applied Physics Letters 99 (25), 2011 | 161 | 2011 |
| Characteristics of GaN‐based laser diodes for post‐DVD applications OH Nam, KH Ha, JS Kwak, SN Lee, KK Choi, TH Chang, SH Chae, ... physica status solidi (a) 201 (12), 2717-2720, 2004 | 119 | 2004 |
| High-power GaN-based blue-violet laser diodes with AlGaN∕ GaN multiquantum barriers SN Lee, SY Cho, HY Ryu, JK Son, HS Paek, T Sakong, T Jang, KK Choi, ... Applied physics letters 88 (11), 2006 | 99 | 2006 |
| Laser display device J Son, JW Lee, H Paek, S Lee, T Sakong US Patent App. 11/513,224, 2007 | 67 | 2007 |
| Characteristics of long wavelength InGaN quantum well laser diodes KS Kim, JK Son, SN Lee, YJ Sung, HS Paek, HK Kim, MY Kim, KH Ha, ... Applied Physics Letters 92 (10), 2008 | 62 | 2008 |
| Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices SN Lee, HS Paek, JK Son, H Kim, KK Kim, KH Ha, OH Nam, Y Park Journal of Electroceramics 23, 406-409, 2009 | 58 | 2009 |
| Efficient alternating current operated white light-emitting diode chip GA Onushkin, YJ Lee, JJ Yang, HK Kim, JK Son, GH Park, YJ Park IEEE Photonics Technology Letters 21 (1), 33-35, 2008 | 57 | 2008 |
| High-performance blue InGaN laser diodes with single-quantum-well active layers HY Ryu, KH Ha, SN Lee, T Jang, JK Son, HS Paek, YJ Sung, HK Kim, ... IEEE Photonics technology letters 19 (21), 1717-1719, 2007 | 57 | 2007 |
| Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics HY Ryu, KH Ha, JK Son, SN Lee, HS Paek, T Jang, YJ Sung, KS Kim, ... Applied Physics Letters 93 (1), 2008 | 55 | 2008 |
| Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics HY Ryu, KH Ha, JH Chae, KS Kim, JK Son, OH Nam, YJ Park, JI Shim Applied physics letters 89 (17), 2006 | 55 | 2006 |
| Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire SN Lee, HS Paek, JK Son, T Sakong, OH Nam, Y Park Journal of crystal growth 307 (2), 358-362, 2007 | 52 | 2007 |
| Highly stable temperature characteristics of InGaN blue laser diodes HY Ryu, KH Ha, SN Lee, T Jang, HK Kim, JH Chae, KS Kim, KK Choi, ... Applied physics letters 89 (3), 2006 | 52 | 2006 |
| Blue light emitting diode internal and injection efficiency IE Titkov, DA Sannikov, YM Park, JK Son AIP Advances 2 (3), 2012 | 47 | 2012 |
| Investigation of optical and electrical properties of Mg-doped p-InxGa1− xN, p-GaN and p-AlyGa1− yN grown by MOCVD SN Lee, JK Son, T Sakong, W Lee, H Paek, E Yoon, J Kim, YH Cho, ... Journal of crystal growth 272 (1-4), 455-459, 2004 | 46 | 2004 |
| Enhanced optical properties of InGaN MQWs with InGaN underlying layers JK Son, SN Lee, T Sakong, HS Paek, O Nam, Y Park, JS Hwang, JY Kim, ... Journal of crystal growth 287 (2), 558-561, 2006 | 43 | 2006 |
| Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates JS Hwang, A Gokarna, YH Cho, JK Son, SN Lee, T Sakong, HS Paek, ... Applied physics letters 90 (13), 2007 | 32 | 2007 |
| Drastic reduction of shot noise in semiconductor superlattices W Song, AKM Newaz, JK Son, EE Mendez Physical review letters 96 (12), 126803, 2006 | 31 | 2006 |
| LED inspection apparatus and LED inspection method using the same G Onushkin, JK Son, JH Lim, SS Hong US Patent 8,068,661, 2011 | 30 | 2011 |
| Characteristics of dotlike green satellite emission in GaInN light emitting diodes A Mao, J Cho, Q Dai, EF Schubert, JK Son, Y Park Applied Physics Letters 98 (2), 2011 | 30 | 2011 |
