| Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers P Ressel, G Erbert, U Zeimer, K Hausler, G Beister, B Sumpf, A Klehr, ... IEEE Photonics Technology Letters 17 (5), 962-964, 2005 | 225 | 2005 |
| AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ... Applied Physics Letters 112 (4), 2018 | 217 | 2018 |
| 20W continuous wave reliable operation of 980nm broad-area single emitter diode lasers with an aperture of 96um P Crump, G Blume, K Paschke, R Staske, A Pietrzak, U Zeimer, S Einfeldt, ... High-Power Diode Laser Technology and Applications VII 7198, 315-323, 2009 | 118 | 2009 |
| High quality AlGaN grown on ELO AlN/sapphire templates U Zeimer, V Kueller, A Knauer, A Mogilatenko, M Weyers, M Kneissl Journal of crystal growth 377, 32-36, 2013 | 113 | 2013 |
| 12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells F Bugge, G Erbert, J Fricke, S Gramlich, R Staske, H Wenzel, U Zeimer, ... Applied Physics Letters 79 (13), 1965-1967, 2001 | 93 | 2001 |
| MOVPE growth of highly strained InGaAs/GaAs quantum wells F Bugge, U Zeimer, M Sato, M Weyers, G Tränkle Journal of crystal growth 183 (4), 511-518, 1998 | 89 | 1998 |
| Growth of AlGaN and AlN on patterned AlN/sapphire templates V Kueller, A Knauer, F Brunner, U Zeimer, H Rodriguez, M Kneissl, ... Journal of Crystal Growth 315 (1), 200-203, 2011 | 83 | 2011 |
| Three New Low-Energy Resonances in the Reaction F Cavanna, R Depalo, M Aliotta, M Anders, D Bemmerer, A Best, ... Physical Review Letters 115 (25), 252501, 2015 | 75 | 2015 |
| Mechanism of ohmic contact formation in AlGaN/GaN high electron mobility transistors N Chaturvedi, U Zeimer, J Würfl, G Tränkle Semiconductor Science and technology 21 (2), 175, 2006 | 71 | 2006 |
| High beam quality in broad area lasers via suppression of lateral carrier accumulation M Winterfeldt, P Crump, S Knigge, A Maaßdorf, U Zeimer, G Erbert IEEE Photonics Technology Letters 27 (17), 1809-1812, 2015 | 68 | 2015 |
| Defect analysis in AlGaN layers on AlN templates obtained by epitaxial lateral overgrowth A Mogilatenko, V Küller, A Knauer, J Jeschke, U Zeimer, M Weyers, ... Journal of crystal growth 402, 222-229, 2014 | 60 | 2014 |
| Proton and heavy ion irradiation effects on AlGaN/GaN HFET devices G Sonia, F Brunner, A Denker, R Lossy, M Mai, J Opitz-Coutureau, ... IEEE Transactions on Nuclear Science 53 (6), 3661-3666, 2006 | 59 | 2006 |
| Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs F Mehnke, M Guttmann, J Enslin, C Kuhn, C Reich, J Jordan, S Kapanke, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (2), 29-36, 2016 | 57 | 2016 |
| Defect evolution during catastrophic optical damage of diode lasers M Hempel, F La Mattina, JW Tomm, U Zeimer, R Broennimann, ... Semiconductor Science and Technology 26 (7), 075020, 2011 | 53 | 2011 |
| Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN: Si and GaN: Si surfaces M Lapeyrade, A Muhin, S Einfeldt, U Zeimer, A Mogilatenko, M Weyers, ... Semiconductor science and technology 28 (12), 125015, 2013 | 51 | 2013 |
| High-power red laser diodes grown by MOVPE M Zorn, H Wenzel, U Zeimer, B Sumpf, G Erbert, M Weyers Journal of Crystal Growth 298, 667-671, 2007 | 51 | 2007 |
| Catastrophic optical mirror damage in diode lasers monitored during single-pulse operation M Ziegler, JW Tomm, D Reeber, T Elsaesser, U Zeimer, HE Larsen, ... Applied Physics Letters 94 (19), 2009 | 50 | 2009 |
| Controlled coalescence of MOVPE grown AlN during lateral overgrowth V Kueller, A Knauer, U Zeimer, M Kneissl, M Weyers Journal of crystal growth 368, 83-86, 2013 | 48 | 2013 |
| (Al,Ga)N overgrowth over AlN ridges oriented in [1120] and [1100] direction V Kueller, A Knauer, U Zeimer, H Rodriguez, A Mogilatenko, M Kneissl, ... physica status solidi c 8 (7‐8), 2022-2024, 2011 | 48 | 2011 |
| Degradation model analysis of laser diodes K Häusler, U Zeimer, B Sumpf, G Erbert, G Tränkle Journal of Materials Science: Materials in Electronics 19, 160-164, 2008 | 48 | 2008 |
