| Oxide electronics utilizing ultrafast metal-insulator transitions Z Yang, C Ko, S Ramanathan Annual Review of Materials Research 41, 337-367, 2011 | 1164 | 2011 |
| Ultra-thin perfect absorber employing a tunable phase change material MA Kats, D Sharma, J Lin, P Genevet, R Blanchard, Z Yang, ... Applied Physics Letters 101 (22), 221101, 2012 | 720 | 2012 |
| High-mobility Sb-doped -type ZnO by molecular-beam epitaxy FX Xiu, Z Yang, LJ Mandalapu, DT Zhao, JL Liu, WP Beyermann Applied Physics Letters 87 (15), 152101, 2005 | 410 | 2005 |
| Electrically pumped ultraviolet ZnO diode lasers on Si S Chu, M Olmedo, Z Yang, J Kong, J Liu Applied Physics Letters 93 (18), 181106, 2008 | 392 | 2008 |
| Voltage-triggered ultrafast phase transition in vanadium dioxide switches Y Zhou, X Chen, C Ko, Z Yang, C Mouli, S Ramanathan IEEE Electron Device Letters 34 (2), 220-222, 2013 | 328 | 2013 |
| Dielectric and carrier transport properties of vanadium dioxide thin films across the phase transition utilizing gated capacitor devices Z Yang, C Ko, V Balakrishnan, G Gopalakrishnan, S Ramanathan Physical Review B 82 (20), 205101, 2010 | 292 | 2010 |
| Photoluminescence study of Sb-doped -type ZnO films by molecular-beam epitaxy FX Xiu, Z Yang, LJ Mandalapu, DT Zhao, JL Liu Applied Physics Letters 87 (25), 252102, 2005 | 252 | 2005 |
| Thermal tuning of mid-infrared plasmonic antenna arrays using a phase change material MA Kats, R Blanchard, P Genevet, Z Yang, MM Qazilbash, DN Basov, ... Optics letters 38 (3), 368-370, 2013 | 244 | 2013 |
| p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy FX Xiu, Z Yang, LJ Mandalapu, JL Liu, WP Beyermann Applied physics letters 88 (5), 052106, 2006 | 185 | 2006 |
| Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes S Chu, JH Lim, LJ Mandalapu, Z Yang, L Li, JL Liu Applied Physics Letters 92 (15), 152103, 2008 | 176 | 2008 |
| -type behavior from Sb-doped heterojunction photodiodes LJ Mandalapu, FX Xiu, Z Yang, DT Zhao, JL Liu Applied Physics Letters 88 (11), 112108, 2006 | 166 | 2006 |
| Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection LJ Mandalapu, Z Yang, FX Xiu, DT Zhao, JL Liu Applied physics letters 88 (9), 092103, 2006 | 165 | 2006 |
| Work function of vanadium dioxide thin films across the metal-insulator transition and the role of surface nonstoichiometry C Ko, Z Yang, S Ramanathan ACS applied materials & interfaces 3 (9), 3396-3401, 2011 | 159 | 2011 |
| Na-doped p-type ZnO microwires W Liu, F Xiu, K Sun, YH Xie, KL Wang, Y Wang, J Zou, Z Yang, J Liu Journal of the American Chemical Society 132 (8), 2498-2499, 2010 | 146 | 2010 |
| Metal-insulator transition characteristics of VO thin films grown on Ge (100) single crystals Z Yang, C Ko, S Ramanathan Journal of Applied Physics 108, 073708, 2010 | 139 | 2010 |
| Ultraviolet emission from Sb-doped -type ZnO based heterojunction light-emitting diodes LJ Mandalapu, Z Yang, S Chu, JL Liu Applied Physics Letters 92 (12), 122101, 2008 | 133 | 2008 |
| Donor and acceptor competitions in phosphorus-doped ZnO FX Xiu, Z Yang, LJ Mandalapu, JL Liu Applied Physics Letters 88 (15), 152116, 2006 | 121 | 2006 |
| Research Update: Spin transfer torques in permalloy on monolayer MoS2 W Zhang, J Sklenar, B Hsu, W Jiang, MB Jungfleisch, J Xiao, FY Fradin, ... APL Materials 4 (3), 032302, 2016 | 108 | 2016 |
| Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy LJ Mandalapu, FX Xiu, Z Yang, JL Liu Solid-state electronics 51 (7), 1014-1017, 2007 | 97 | 2007 |
| Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 K Z Yang, S Hart, C Ko, A Yacoby, S Ramanathan Journal of Applied Physics 110 (3), 033725, 2011 | 86 | 2011 |
Jianlin LiuProfessor of Electrical and Computer Engineering, University of California, Riverside在 ece.ucr.edu 的电子邮件经过验证
