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Max Bloomfield
标题
引用次数
引用次数
年份
Modeling thermal stresses in 3-D IC interwafer interconnects
J Zhang, MO Bloomfield, JQ Lu, RJ Gutmann, TS Cale
IEEE transactions on semiconductor manufacturing 19 (4), 437-448, 2006
692006
Thermal stresses in 3D IC inter-wafer interconnects
J Zhang, MO Bloomfield, JQ Lu, RJ Gutmann, TS Cale
Microelectronic Engineering 82 (3-4), 534-547, 2005
572005
Integrated multiscale process simulation
TS Cale, MO Bloomfield, DF Richards, KE Jansen, MK Gobbert
Computational materials science 23 (1-4), 3-14, 2002
512002
A computational framework for modelling grain-structure evolution in three dimensions
MO Bloomfield, DF Richards, TS Cale
Philosophical Magazine 83 (31-34), 3549-3568, 2003
392003
Modeling pattern density dependent bump formation in copper electrochemical deposition
YH Im, MO Bloomfield, S Sen, TS Cale
Electrochemical and solid-state letters 6 (3), C42, 2003
372003
Formation and evolution of grain structures in thin films
MO Bloomfield, TS Cale
Microelectronic engineering 76 (1-4), 195-204, 2004
292004
Extension velocities for level set based surface profile evolution
DF Richards, MO Bloomfield, S Sen, TS Cale
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (4 …, 2001
292001
Passivity-based iterative learning control design for selective laser melting
MJB Spector, Y Guo, S Roy, MO Bloomfield, A Maniatty, S Mishra
2018 Annual American Control Conference (ACC), 5618-5625, 2018
202018
Thermomechanical behavior of EUV pellicle under dynamic exposure conditions
DL Goldfarb, MO Bloomfield, M Colburn
Extreme Ultraviolet (EUV) Lithography VII 9776, 601-611, 2016
182016
Stress-induced grain boundary migration in polycrystalline copper
MO Bloomfield, DN Bentz, TS Cale
Journal of electronic materials 37, 249-263, 2008
162008
Modeling plasma processes in microelectronics
DF Richards, MO Bloomfield, S Soukane, TS Cale
Vacuum 59 (1), 168-178, 2000
132000
Simulation of finite-strain inelastic phenomena governed by creep and plasticity
Z Li, MO Bloomfield, AA Oberai
Computational Mechanics 62, 323-345, 2018
102018
Two deterministic approaches to topography evolution
TS Cale, MO Bloomfield, MK Gobbert
Surface and Coatings Technology 201 (22-23), 8873-8877, 2007
92007
Thermally induced stresses in 3D-IC inter-wafer interconnects: A combined grain-continuum and continuum approach
MO Bloomfield, DN Bentz, JQ Lu, RJ Gutmann, TS Cale
Microelectronic engineering 84 (11), 2750-2756, 2007
82007
Modeling and simulation of plasma enhanced processing for integrated circuit fabrication
V Prasad, MO Bloomfield, DF Richards, H Liang, TS Cale
Vacuum 65 (3-4), 443-455, 2002
72002
Modeling thermal stresses of copper interconnects in 3D IC structures
DN Bentz, J Zhang, M Bloomfield, JQ Lu, RJ Gutmann, TS Cale
Proc. COMSOL Multiphysics User's Conference, 2005
62005
Modeling of ionized magnetron sputtering of copper
MO Bloomfield, TS Cale
MRS Online Proceedings Library (OPL) 616, 147, 2000
62000
Component-based workflows for parallel thermomechanical analysis of arrayed geometries
MO Bloomfield, Z Li, B Granzow, DA Ibanez, AA Oberai, GA Hansen, ...
Engineering with Computers 33, 509-517, 2017
52017
Electrochem. & Solid-State Lett. 6
YH Im, MO Bloomfield, S Sen, TS Cale
C42, 2003
52003
Grain based modeling of stress induced copper migration for 3D-IC interwafer vias
DN Bentz, MO Bloomfield, H Huang, RJ Gutmann, TS Cale
2006 International Conference on Simulation of Semiconductor Processes and …, 2006
42006
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