| A physical model for bulk gate insulator trap generation during bias-temperature stress in differently processed p-channel FETs T Samadder, N Choudhury, S Kumar, D Kochar, N Parihar, S Mahapatra IEEE Transactions on Electron Devices 68 (2), 485-490, 2021 | 21 | 2021 |
| Analysis of sheet dimension (W, L) dependence of NBTI in GAA-SNS FETs N Choudhury, T Samadder, R Tiwari, H Zhou, RG Southwick, M Wang, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2021 | 9 | 2021 |
| A Generic Trap Generation Framework for MOSFET Reliability—Part I: Gate Only Stress–BTI, SILC, and TDDB S Mahapatra, A Ansari, AS Bisht, N Choudhury, N Parihar, P Chatterjee, ... IEEE Transactions on Electron Devices, 2023 | 7 | 2023 |
| Tunneling Leakage Current Dependent RDD Model Framework for Gate Oxide TDDB T Samadder, S Mahapatra 2023 International Conference on Simulation of Semiconductor Processes and …, 2023 | 3 | 2023 |
| BAT Framework Modeling of RMG HKMG GAA-SNS FETs N Choudhury, T Samadder, R Southwick, H Zhou, M Wang, S Mahapatra Recent Advances in PMOS Negative Bias Temperature Instability …, 2022 | 3 | 2022 |
| BTI analysis tool (BAT) model framework—Generation of bulk traps S Mahapatra, N Parihar, T Samadder, N Choudhury, A Raj Recent Advances in PMOS Negative Bias Temperature Instability …, 2022 | 3 | 2022 |
| BAT Framework Modeling of Gate First HKMG Si-Capped SiGe Channel MOSFETs N Parihar, T Samadder, S Mahapatra Recent Advances in PMOS Negative Bias Temperature Instability …, 2022 | 2 | 2022 |
| A Theoretical Framework for Trap Generation and Passivation in NAND Flash Tunnel Oxide During Distributed Cycling and Retention Bake T Samadder, S Kumar, K Thakor, S Mahapatra 2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021 | 2 | 2021 |
| Modeling of HKMG Stack Process Impact on Gate Leakage, SILC and PBTI D Kochar, T Samadder, S Mukhopadhyay, S Mahapatra 2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021 | 2 | 2021 |
| Stochastic and deterministic modeling frameworks for time kinetics of gate insulator traps during and after hot carrier stress in MOSFETs S Kumar, T Samadder, K Thakor, U Sharma, S Mahapatra 2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021 | 2 | 2021 |
| BAT framework modeling of dimension scaling in FinFETs and GAA-SNS FETs S Mahapatra, N Parihar, N Choudhury, R Tiwari, T Samadder Recent Advances in PMOS Negative Bias Temperature Instability …, 2022 | 1 | 2022 |
| BAT framework modeling of RMG HKMG Si and SiGe channel FinFETs N Parihar, N Choudhury, T Samadder, R Southwick, M Wang, JH Stathis, ... Recent Advances in PMOS Negative Bias Temperature Instability …, 2022 | 1 | 2022 |
| BAT framework modeling of gate first HKMG Si channel MOSFETs S Mahapatra, N Parihar, N Goel, N Choudhury, T Samadder Recent Advances in PMOS Negative Bias Temperature Instability …, 2022 | 1 | 2022 |
| BAT Framework Modeling of AC NBTI: Stress Mode, Duty Cycle and Frequency S Mahapatra, N Parihar, N Goel, N Choudhury, T Samadder, U Sharma Recent Advances in PMOS Negative Bias Temperature Instability …, 2022 | | 2022 |
| BAT Framework Modeling of RMG HKMG SOI FinFETs N Parihar, N Choudhury, T Samadder, U Sharma, R Southwick, M Wang, ... Recent Advances in PMOS Negative Bias Temperature Instability …, 2022 | | 2022 |
| BAT Framework Modeling of Gate First HKMG Si and SiGe Channel FDSOI MOSFETs N Parihar, T Samadder, N Choudhury, V Huard, S Mahapatra Recent Advances in PMOS Negative Bias Temperature Instability …, 2022 | | 2022 |
| TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs R Tiwari, N Choudhury, T Samadder, S Mukhopadhyay, N Parihar, ... 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | | 2020 |
Souvik MahapatraProfessor, EE Dept, IIT Bombay (Fellow of IEEE, INSA, IASc, INAE)在 ee.iitb.ac.in 的电子邮件经过验证
