| A direct epitaxial approach to achieving ultrasmall and ultrabright InGaN micro light-emitting diodes (μLEDs) J Bai, Y Cai, P Feng, P Fletcher, X Zhao, C Zhu, T Wang ACS photonics 7 (2), 411-415, 2020 | 55 | 2020 |
| Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width J Bai, Y Cai, P Feng, P Fletcher, C Zhu, Y Tian, T Wang ACS nano 14 (6), 6906-6911, 2020 | 52 | 2020 |
| Direct epitaxial approach to achieve a monolithic on-chip integration of a HEMT and a single micro-LED with a high-modulation bandwidth Y Cai, JIH Haggar, C Zhu, P Feng, J Bai, T Wang ACS applied electronic materials 3 (1), 445-450, 2021 | 28 | 2021 |
| Exploring an approach toward the intrinsic limits of GaN electronics S Jiang, Y Cai, P Feng, S Shen, X Zhao, P Fletcher, V Esendag, KB Lee, ... ACS applied materials & interfaces 12 (11), 12949-12954, 2020 | 17 | 2020 |
| A simple approach to achieving ultrasmall III-nitride microlight-emitting diodes with red emission P Feng, C Xu, J Bai, C Zhu, I Farrer, G Martinez de Arriba, T Wang ACS Applied Electronic Materials 4 (6), 2787-2792, 2022 | 14 | 2022 |
| Monolithically Integrated μLEDs/HEMTs Microdisplay on a Single Chip by a Direct Epitaxial Approach Y Cai, C Zhu, W Zhong, P Feng, S Jiang, T Wang Advanced Materials Technologies 6 (6), 2100214, 2021 | 11 | 2021 |
| Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon X Zhao, K Huang, J Bruckbauer, S Shen, C Zhu, P Fletcher, P Feng, Y Cai, ... Scientific Reports 10 (1), 12650, 2020 | 9 | 2020 |
| Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays PM Coulon, P Feng, B Damilano, S Vézian, T Wang, PA Shields Scientific Reports 10 (1), 5642, 2020 | 9 | 2020 |
| Simple approach to mitigate the emission wavelength instability of III-nitride μLED arrays G Martinez de Arriba, P Feng, C Xu, C Zhu, J Bai, T Wang ACS photonics 9 (6), 2073-2078, 2022 | 8 | 2022 |
| Nearly lattice-matched GaN distributed Bragg reflectors with enhanced performance Y Tian, P Feng, C Zhu, X Chen, C Xu, V Esendag, G Martinez de Arriba, ... Materials 15 (10), 3536, 2022 | 7 | 2022 |
| Optical characterisation of InGaN-based microdisk arrays with nanoporous GaN/GaN DBRs P Fletcher, GM de Arriba, Y Tian, N Poyiatzis, C Zhu, P Feng, J Bai, ... Journal of Physics D: Applied Physics 55 (46), 464001, 2022 | 4 | 2022 |
| A comparison study of InGaN/GaN multiple quantum wells grown on (111) silicon and (0001) sapphire substrates under identical conditions C Zhu, C Xu, P Feng, X Chen, GM de Arriba, J Bai, T Wang Journal of Physics D: Applied Physics 55 (44), 444003, 2022 | 4 | 2022 |
| Investigation of electrical properties of InGaN‐based micro‐light‐emitting diode arrays achieved by direct epitaxy V Esendag, J Bai, P Fletcher, P Feng, C Zhu, Y Cai, T Wang physica status solidi (a) 218 (24), 2100474, 2021 | 3 | 2021 |
| Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (11 2¯ 2) and Non-Polar (11 2¯ 0) GaN Nanorods PM Coulon, P Feng, T Wang, PA Shields Nanomaterials 10 (12), 2562, 2020 | 3 | 2020 |
| Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor V Esendag, P Feng, C Zhu, R Ni, J Bai, T Wang Materials 15 (17), 6043, 2022 | 1 | 2022 |
| Color filtering dbr for micro-leds P Feng, J Haggar, N Poyiatzis, Y Tian, X Yu US Patent App. 18/531,037, 2024 | | 2024 |
| Resonant cavity micro-led fabrication Y Tian, X Yu, P Feng, N Poyiatzis, J Haggar US Patent App. 18/531,115, 2024 | | 2024 |
| Micro-led dbr fabrication by electrochemical etching Y Tian, X Yu, P Feng, N Poyiatzis, J Haggar US Patent App. 18/530,849, 2024 | | 2024 |
| Imaging threading dislocations and surface steps in nitride thin films using electron backscatter diffraction KP Hiller, A Winkelmann, B Hourahine, B Starosta, A Alasmari, P Feng, ... Microscopy and Microanalysis 29 (6), 1879-1888, 2023 | | 2023 |
| A direct epitaxial approach to achieving ultrasmall and ultracompact III-nitride micro-LED arrays P Feng University of Sheffield, 2022 | | 2022 |
