| Electrical control of the tensor of the first hole in a silicon MOS quantum dot SD Liles, F Martins, DS Miserev, AA Kiselev, ID Thorvaldson, MJ Rendell, ... Physical Review B 104 (23), 235303, 2021 | 42 | 2021 |
| Lightly strained germanium quantum wells with hole mobility exceeding one million M Lodari, O Kong, M Rendell, A Tosato, A Sammak, M Veldhorst, ... Applied Physics Letters 120 (12), 2022 | 37 | 2022 |
| Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field A Sarkar, Z Wang, M Rendell, NW Hendrickx, M Veldhorst, G Scappucci, ... Physical Review B 108 (24), 245301, 2023 | 16 | 2023 |
| Gate voltage dependent Rashba spin splitting in hole transverse magnetic focusing MJ Rendell, SD Liles, A Srinivasan, O Klochan, I Farrer, DA Ritchie, ... Physical Review B 105 (24), 245305, 2022 | 9 | 2022 |
| Transverse magnetic focussing of heavy holes in a (100) GaAs quantum well M Rendell, O Klochan, A Srinivasan, I Farrer, DA Ritchie, AR Hamilton Semiconductor Science and Technology 30 (10), 102001, 2015 | 7 | 2015 |
| A singlet-triplet hole-spin qubit in MOS silicon SD Liles, DJ Halverson, Z Wang, A Shamim, RS Eggli, IK Jin, J Hillier, ... arXiv preprint arXiv:2310.09722, 2023 | 6 | 2023 |
| Combining n-MOS charge sensing with p-MOS silicon hole double quantum dots in a CMOS platform IK Jin, K Kumar, MJ Rendell, JY Huang, CC Escott, FE Hudson, WH Lim, ... Nano Letters 23 (4), 1261-1266, 2023 | 5 | 2023 |
| Spin polarization and spin-dependent scattering of holes observed in transverse magnetic focusing MJ Rendell, SD Liles, A Srinivasan, O Klochan, I Farrer, DA Ritchie, ... Physical Review B 107 (4), 045304, 2023 | 2 | 2023 |
| Probing Fermi surface shifts with spin resolved transverse magnetic focussing MJ Rendell, SD Liles, S Bladwell, A Srinivasan, O Klochan, I Farrer, ... arXiv preprint arXiv:2310.04005, 2023 | 1 | 2023 |
| Spin dynamics of holes in GaAs and Gesemiconductor nanostructures M Rendell UNSW Sydney, 2021 | 1 | 2021 |
| Electric control of the single hole g-factor by 400% in a silicon MOS quantum dot. S Liles, F Martins, D Miserev, I Thorvaldson, M Rendell, F Hudson, ... Bulletin of the American Physical Society 65, 2020 | 1 | 2020 |
| A singlet-triplet hole-spin qubit in planar silicon S Liles, A Shamim, IK Jin, J Hillier, M Rendell, I Vorreiter, WH Lim, ... APS March Meeting Abstracts 2023, Y74. 002, 2023 | | 2023 |
| Characterising the hole g-factor in lightly strained Ge/SiGe quantum wells with applications for hole spin qubits M Rendell APS March Meeting Abstracts 2023, D56. 011, 2023 | | 2023 |
| Spin polarisation and spin dependent scattering of holes in transverse magnetic focussing MJ Rendell, SD Liles, A Srinivasan, O Klochan, I Farrer, DA Ritchie, ... arXiv preprint arXiv:2210.03383, 2022 | | 2022 |
| Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform I Kyeong Jin, K Kumar, MJ Rendell, JY Huang, CC Escott, FE Hudson, ... arXiv e-prints, arXiv: 2211.00178, 2022 | | 2022 |
| In-plane field dependence of spin resolved magnetic focussing in 2D hole systems M Rendell, S Liles, A Srinivasan, O Klochan, I Farrer, D Ritchie, ... APS March Meeting Abstracts 2019, S33. 013, 2019 | | 2019 |
| Unusual In-Plane Field Dependence of Spin Resolved Magnetic Focussing in 2D Hole Systems M Rendell, S Liles, O Klochan, A Srinivasan, I Farrer, D Ritchie, ... APS March Meeting Abstracts 2018, S21. 001, 2018 | | 2018 |
| Supplementary Material: A singlet-triplet hole-spin qubit in MOS silicon. SD Liles, DJ Halverson, Z Wang, A Shamim, RS Eggli, IK Jin, J Hillier, ... | | |
