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Quan Sun
Quan Sun
Senior Engineer
在 fnal.gov 的电子邮件经过验证
标题
引用次数
引用次数
年份
First reticule size MAPS with digital output and integrated zero suppression for the EUDET-JRA1 beam telescope
C Hu-Guo, J Baudot, G Bertolone, A Besson, AS Brogna, C Colledani, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010
1682010
A low-noise, low-power amplifier with current-reused OTA for ECG recordings
J Zhang, H Zhang, Q Sun, R Zhang
IEEE transactions on biomedical circuits and systems 12 (3), 700-708, 2018
1072018
CMOS pixel sensor development: a fast read-out architecture with integrated zero suppression
C Hu-Guo, J Baudot, G Bertolone, A Besson, AS Brogna, C Colledani, ...
Journal of Instrumentation 4 (04), P04012, 2009
652009
A closed-loop neuromodulation chipset with 2-level classification achieving 1.5-Vpp CM interference tolerance, 35-dB stimulation artifact rejection in 0.5 ms and 97.8 …
Y Wang, H Luo, Y Chen, Z Jiao, Q Sun, L Dong, X Chen, X Wang, ...
IEEE Transactions on Biomedical Circuits and Systems 15 (4), 802-819, 2021
622021
A low-noise CMOS pixel direct charge sensor, Topmetal-II
M An, C Chen, C Gao, M Han, R Ji, X Li, Y Mei, Q Sun, X Sun, K Wang, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2016
522016
A 48 pW, 0.34 V, 0.019%/V line sensitivity self-biased subthreshold voltage reference with DIBL effect compensation
Y Wang, Q Sun, H Luo, X Wang, R Zhang, H Zhang
IEEE Transactions on Circuits and Systems I: Regular Papers 67 (2), 611-621, 2019
302019
Adaptive unscented kalman filter with correntropy loss for robust state of charge estimation of lithium-ion battery
Q Sun, H Zhang, J Zhang, W Ma
Energies 11 (11), 3123, 2018
282018
A 0.6-V 10-bit 200-kS/s SAR ADC with higher side-reset-and-set switching scheme and hybrid CAP-MOS DAC
H Zhang, H Zhang, Q Sun, J Li, X Liu, R Zhang
IEEE Transactions on Circuits and Systems I: Regular Papers 65 (11), 3639-3650, 2018
272018
Noise immune state of charge estimation of li-ion battery via the extreme learning machine with mixture generalized maximum correntropy criterion
X Wang, Q Sun, X Kou, W Ma, H Zhang, R Liu
Energy 239, 122406, 2022
222022
A ten thousand frames per second readout MAPS for the EUDET beam telescope
C Hu-Guo, C Colledani, Y Voutsinas, G Santos, W Dulinski, Y Degerli, ...
CERN, 2009
212009
A low-power time-to-digital converter for the CMS endcap timing layer (ETL) upgrade
W Zhang, H Sun, C Edwards, D Gong, X Huang, C Liu, T Liu, T Liu, ...
IEEE Transactions on Nuclear Science 68 (8), 1984-1992, 2021
192021
A 0.5 V, 650 pW, 0.031%/V line regulation subthreshold voltage reference
Y Wang, R Zhang, Q Sun, H Zhang
ESSCIRC 2018-IEEE 44th European Solid State Circuits Conference (ESSCIRC), 82-85, 2018
192018
A fully integrated CMOS voltage regulator for supply-noise-insensitive charge pump PLL design
Q Sun, Y Zhang, C Hu-Guo, K Jaaskelainen, Y Hu
Microelectronics journal 41 (4), 240-246, 2010
142010
lpGBT documentation: release
P Moreira, S Baron, S Biereigel, J Carvalho, B Faes, M Firlej, T Fiutowski, ...
CERN, Switzerland, 2022
122022
Estimation of multipath delay-Doppler parameters from moving LFM signals in shallow water
Q Sun, FY Wu, K Yang, Y Ma
Ocean Engineering 232, 109125, 2021
122021
Sparsity constrained recursive generalized maximum correntropy criterion with variable center algorithm
Q Sun, H Zhang, X Wang, W Ma, B Chen
IEEE Transactions on Circuits and Systems II: Express Briefs 67 (12), 3517-3521, 2020
122020
Development of a highly pixelated direct charge sensor, Topmetal-I, for ionizing radiation imaging
Y Fan, C Gao, G Huang, X Li, Y Mei, H Pei, Q Sun, X Sun, D Wang, ...
arXiv preprint arXiv:1407.3712, 2014
112014
A 1-V 2.69-ppm/° C 0.8-μW bandgap reference with piecewise exponential curvature compensation
H Luo, L Dong, Y Wang, Z Jiao, Y Chen, X Wang, H Zhang
Microelectronics Journal 121, 105368, 2022
102022
Characterization of the CMS Endcap Timing Layer readout chip prototype with charge injection
H Sun, D Gong, W Zhang, C Edwards, G Huang, X Huang, C Liu, T Liu, ...
Journal of Instrumentation 16 (06), P06038, 2021
102021
Developments of two 4× 10 Gb/s VCSEL array drivers in 65 nm CMOS for HEP experiments
D Guo, D Gong, AC Xiang, P Moreira, S Kulis, J Chen, S Hou, C Liu, T Liu, ...
Journal of Instrumentation 12 (02), C02065, 2017
102017
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