| Method of cleaning glass substrates DG Enicks, Y Nakamura, S Venkatachalam, WJ Walczak, L Wang US Patent 9,561,982, 2017 | 150 | 2017 |
| Glass articles and methods for controlled bonding of glass sheets with carriers RA Bellman, DC Bookbinder, RG Manley, P Mazumder, T Chang, ... US Patent 10,086,584, 2018 | 45 | 2018 |
| Hetrojunction bipolar transistor (hbt) with periodic multilayer base DG Enicks, A Corporation US Patent App. 11/467,480, 2006 | 40 | 2006 |
| Carrier-bonding methods and articles for semiconductor and interposer processing DG Enicks, JT Keech, AB Shorey, WP Thomas III US Patent 10,510,576, 2019 | 36 | 2019 |
| Methods for processing electronic devices RA Bellman, DC Bookbinder, RG Manley, P Mazumder, T Chang, ... US Patent 10,014,177, 2018 | 34 | 2018 |
| Articles with anti-reflective high-hardness coatings and related methods CA Paulson, DG Enicks, JF Oudard, JJ Price, J Wang US Patent 9,703,010, 2017 | 29 | 2017 |
| Boron etch-stop layer and methods related thereto DG Enicks US Patent 7,569,913, 2009 | 20 | 2009 |
| Strain-compensated metastable compound base heterojunction bipolar transistor D Enicks, J Chaffee, D Carver, E Darwin G, C John T, C Darnian A US Patent App. 11/268,154, 2005 | 19 | 2005 |
| A method for manipulation of oxygen within semiconductor materials D Enicks US Patent App. 11/421,161, 2007 | 18 | 2007 |
| Method for growth and optimization of heterojunction bipolar transistor film stacks by remote injection D Enicks, D Carver, E Darwin G, C Damian A US Patent App. 11/166,287, 2005 | 18 | 2005 |
| Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator DG Enicks US Patent 7,550,758, 2009 | 17 | 2009 |
| System and method for providing a nanoscale, highly selective, and thermally resilient silicon, germanium, or silicon-germanium etch-stop D Enicks US Patent App. 11/554,430, 2007 | 15 | 2007 |
| Vapor deposition systems and processes for the protection of glass sheets RA Boudreau, DG Enicks, CA Paulson, GR Trott US Patent 10,106,457, 2018 | 14 | 2018 |
| Integrated circuit structures having a boron-and carbon-doped etch-stop and methods, devices and systems related thereto DG Enicks US Patent 7,495,250, 2009 | 14 | 2009 |
| Oxygen enhanced metastable silicon germanium film layer DG Enicks, JT Chaffee, DA Carver US Patent App. 11/318,797, 2007 | 13 | 2007 |
| Gettering layer on substrate D Enicks, M Good, J Chaffee US Patent App. 12/020,930, 2009 | 11 | 2009 |
| A study of process-induced oxygen updiffusion in pseudomorphic boron-doped sub-50 nm SiGeC layers grown by LPCVD D Enicks, G Oleszek Electrochemical and Solid-State Letters 8 (10), G286, 2005 | 11 | 2005 |
| Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization DG Enicks, D Carver US Patent 7,651,919, 2010 | 10 | 2010 |
| Integrated circuit structures having a boron etch-stop layer and methods, devices and systems related thereto DG Enicks US Patent App. 12/114,571, 2008 | 9 | 2008 |
| Electronic device with dopant diffusion barrier and tunable work function and methods of making same DG Enicks US Patent 7,612,421, 2009 | 8 | 2009 |
