| In situ low temperature growth of poly-crystalline germanium thin film on glass by RF magnetron sputtering CY Tsao, JW Weber, P Campbell, G Conibeer, D Song, MA Green Solar energy materials and solar cells 94 (9), 1501-1505, 2010 | 45 | 2010 |
| Low cost silver alloy wire bonding with excellent reliability performance CH Cheng, HL Hsiao, SI Chu, YY Shieh, CY Sun, C Peng 2013 IEEE 63rd Electronic Components and Technology Conference, 1569-1573, 2013 | 43 | 2013 |
| Adjustable emissions from silicon-rich oxide films prepared by plasma-enhanced chemical-vapor deposition JF Tong, HL Hsiao, HL Hwang Applied physics letters 74 (16), 2316-2318, 1999 | 36 | 1999 |
| Study on low temperature facetting growth of polycrystalline silicon thin films by ECR downstream plasma CVD with different hydrogen dilution HL Hsiao, HL Hwang, AB Yang, LW Chen, TR Yew Applied surface science 142 (1-4), 316-321, 1999 | 33 | 1999 |
| Room temperature tunneling transport through Si nanodots in silicon rich silicon nitride Z Pei, AYK Su, HL Hwang, HL Hsiao Applied Physics Letters 86 (6), 2005 | 23 | 2005 |
| Synthesis and formation mechanism of gallium nitride nanotubular structure MC Lu, YL Chueh, LJ Chen, LJ Chou, HL Hsiao, AB Yang Electrochemical and Solid-State Letters 8 (7), G153, 2005 | 17 | 2005 |
| Electrical and structural properties of low temperature boron-and phosphorus-doped polycrystalline silicon thin films prepared by ECR-CVD HL Hsiao, YY Shieh, RS Lee, RY Wang, KC Wang, HL Hwang, AB Yang Applied surface science 142 (1-4), 400-406, 1999 | 11 | 1999 |
| Adsorption and switching behavior of individual Ti atoms on the surface HF Hsu, LJ Chen, HL Hsiao, TW Pi Physical Review B 68 (16), 165403, 2003 | 10 | 2003 |
| Enhancing silicide formation in Ni/Si (111) by Ag-Si particles at the interface CHT Chang, PC Jiang, YT Chow, HL Hsiao, WB Su, JS Tsay Scientific reports 9 (1), 8835, 2019 | 9 | 2019 |
| Luminescence and structural properties of silicon-rich nitride by X-ray absorption spectroscopy HL Hsiao, AB Yang, HL Hwang Journal of Physics and Chemistry of Solids 69 (2-3), 278-283, 2008 | 9 | 2008 |
| Electron relaxation in empty quantum-well states of a Pb island on Cu (111) studied by ZV (distance-voltage) spectroscopy in scanning tunneling microscopy SM Lu, WB Su, CL Lin, WY Chan, HL Hsiao, CS Chang, TT Tsong Journal of Applied Physics 108 (8), 2010 | 7 | 2010 |
| Acetylene assisted formation of GaN–carbon nanotubes heterojunction nanowires HL Hsiao, ZY Liu, PH Lee Diamond and related materials 18 (2-3), 537-540, 2009 | 6 | 2009 |
| Investigation of fluorine induced probe marker discoloration P Chang, HL Hsiao, CH Cheng, SI Chu, HW Tai, YY Shieh, CY Sun 2013 IEEE 15th Electronics Packaging Technology Conference (EPTC 2013), 139-142, 2013 | 4 | 2013 |
| Disappearance of Lowest-Order Transmission Resonance in Ag Film of Critical Thickness SM Lu, HS Huang, WB Su, PH Chu, CS Chang, HL Hsiao, TT Tsong Japanese Journal of Applied Physics 50 (8S3), 08LB01, 2011 | 4 | 2011 |
| Initial stages of ultra thin Ti film growth on Si (1 1 1)-7× 7 surface HF Hsu, MC Lu, CK Fang, LJ Chen, HL Hsiao, TW Pi Thin solid films 428 (1-2), 133-138, 2003 | 4 | 2003 |
| Scanning tunneling spectroscopy observation of electronic resonances originating from 1× 1 potential on the dense Pb overlayer on Si (111) SM Lu, WY Chan, HY Chou, YP Chiu, WB Su, PH Chu, CL Jiang, ... Japanese Journal of Applied Physics 51 (1R), 015702, 2011 | 2 | 2011 |
| Direct observation of localized unoccupied states by synchrotron radiation two-color resonant photoemission HL Hsiao, AB Yang, HL Hwang Applied surface science 212, 73-77, 2003 | 2 | 2003 |
| Low temperature selective growth and field emission characteristics of tapered SiGe nanowires array HL Hsiao, CY Chen, AB Yang WSEAS Transactions on Electronics 3 (4), 179, 2006 | 1 | 2006 |
| Identification of the first nucleated phase in submonolayer Ti deposited on Si (1 1 1)-7× 7 by atomic resolution techniques HF Hsu, HC Hsu, TF Chiang, LJ Chen, HL Hsiao Ultramicroscopy 100 (3-4), 347-351, 2004 | 1 | 2004 |
| 半導體奈米層狀結構及其製作方法 HL Hsiao TW Patent I608,986, 2017 | | 2017 |
