Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition JD Wood, SW Schmucker, AS Lyons, E Pop, JW Lyding Nano letters 11 (11), 4547-4554, 2011 | 576 | 2011 |
Role of Pressure in the Growth of Hexagonal Boron Nitride Thin Films from Ammonia-Borane JC Koepke, JD Wood, Y Chen, SW Schmucker, X Liu, NN Chang, ... Chemistry of Materials 28 (12), 4169-4179, 2016 | 109 | 2016 |
Electronic hybridization of large-area stacked graphene films JT Robinson, SW Schmucker, CB Diaconescu, JP Long, JC Culbertson, ... ACS nano 7 (1), 637-644, 2012 | 107 | 2012 |
Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control CD Cress, SW Schmucker, AL Friedman, P Dev, JC Culbertson, ... ACS nano 10 (3), 3714-3722, 2016 | 79 | 2016 |
Atomic precision lithography on Si JN Randall, JW Lyding, S Schmucker, JR Von Ehr, J Ballard, R Saini, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 79 | 2009 |
Inducing electronic changes in graphene through silicon (100) substrate modification Y Xu, KT He, SW Schmucker, Z Guo, JC Koepke, JD Wood, JW Lyding, ... Nano letters 11 (7), 2735-2742, 2011 | 71 | 2011 |
Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography SW Schmucker, N Kumar, JR Abelson, SR Daly, GS Girolami, MR Bischof, ... Nature communications 3 (1), 935, 2012 | 68 | 2012 |
Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices J Wyrick, X Wang, RV Kashid, P Namboodiri, SW Schmucker, ... Advanced Functional Materials, 1903475, 2019 | 58 | 2019 |
Atomic precision advanced manufacturing for digital electronics DR Ward, SW Schmucker, EM Anderson, E Bussmann, L Tracy, TM Lu, ... EDFA Technical Articles 22 (1), 4-10, 2020 | 41 | 2020 |
Removal of sodium dodecyl sulfate surfactant from aqueous dispersions of single-wall carbon nanotubes JE Rossi, KJ Soule, E Cleveland, SW Schmucker, CD Cress, ND Cox, ... Journal of Colloid and Interface Science 495, 140-148, 2017 | 31 | 2017 |
Reducing flicker noise in chemical vapor deposition graphene field-effect transistors HN Arnold, VK Sangwan, SW Schmucker, CD Cress, KA Luck, ... Applied Physics Letters 108 (7), 2016 | 30 | 2016 |
Atomic-scale control of tunneling in donor-based devices X Wang, J Wyrick, RV Kashid, P Namboodiri, SW Schmucker, A Murphy, ... Communications Physics 3 (1), 82, 2020 | 27 | 2020 |
Raman signature of defected twisted bilayer graphene SW Schmucker, CD Cress, JC Culbertson, JW Beeman, OD Dubon, ... Carbon 93, 250-257, 2015 | 27 | 2015 |
Electronic transport and localization in nitrogen-doped graphene devices using hyperthermal ion implantation AL Friedman, CD Cress, SW Schmucker, JT Robinson, OMJ van‘t Erve Physical Review B 93 (16), 161409, 2016 | 25 | 2016 |
Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors JJ McMorrow, CD Cress, HN Arnold, VK Sangwan, D Jariwala, ... Applied Physics Letters 110 (7), 2017 | 24 | 2017 |
Atomic precision patterning on Si: An opportunity for a digitized process JN Randall, JB Ballard, JW Lyding, S Schmucker, JR Von Ehr, R Saini, ... Microelectronic Engineering 87 (5-8), 955-958, 2010 | 24 | 2010 |
Nanometer-scale sharpening of conductor tips JW Lyding, SW Schmucker US Patent 8,070,920, 2011 | 23 | 2011 |
Atom-by-atom construction of a cyclic artificial molecule in silicon J Wyrick, X Wang, P Namboodiri, SW Schmucker, RV Kashid, RM Silver Nano letters 18 (12), 7502-7508, 2018 | 20 | 2018 |
Tunable Radiation Response in Hybrid Organic–Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics HN Arnold, CD Cress, JJ McMorrow, SW Schmucker, VK Sangwan, ... ACS applied materials & interfaces 8 (8), 5058-5064, 2016 | 20 | 2016 |
Low-resistance, high-yield electrical contacts to atom scale Si:P devices using palladium silicide SW Schmucker, PN Namboodiri, R Kashid, X Wang, B Hu, JE Wyrick, ... Physical Review Applied, 2019 | 14 | 2019 |