| MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures SM Islam, K Lee, J Verma, V Protasenko, S Rouvimov, S Bharadwaj, ... Applied Physics Letters 110 (4), 2017 | 128 | 2017 |
| Inactivation of Listeria and E. coli by Deep-UV LED: effect of substrate conditions on inactivation kinetics Y Cheng, H Chen, LA Sánchez Basurto, VV Protasenko, S Bharadwaj, ... Scientific reports 10 (1), 3411, 2020 | 79 | 2020 |
| GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy T Wei, SM Islam, U Jahn, J Yan, K Lee, S Bharadwaj, X Ji, J Wang, J Li, ... Optics Letters 45 (1), 121-124, 2020 | 35 | 2020 |
| Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions H Turski, S Bharadwaj, HG Xing, D Jena Journal of Applied Physics 125 (20), 2019 | 35 | 2019 |
| GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current SJ Bader, R Chaudhuri, A Hickman, K Nomoto, S Bharadwaj, HW Then, ... 2019 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2019 | 31 | 2019 |
| Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes S Bharadwaj, J Miller, K Lee, J Lederman, M Siekacz, H Xing, D Jena, ... Optics Express 28 (4), 4489-4500, 2020 | 24 | 2020 |
| Light-emitting diodes with AlN polarization-induced buried tunnel junctions: A second look K Lee, S Bharadwaj, YT Shao, L van Deurzen, V Protasenko, DA Muller, ... Applied Physics Letters 117 (6), 2020 | 16 | 2020 |
| Bandgap narrowing and Mott transition in Si-doped Al0. 7Ga0. 3N S Bharadwaj, SM Islam, K Nomoto, V Protasenko, A Chaney, HG Xing, ... Applied Physics Letters 114 (11), 2019 | 16 | 2019 |
| Nitride LEDs and lasers with buried tunnel junctions H Turski, M Siekacz, G Muzioł, M Hajdel, S Stańczyk, M Żak, M Chlipała, ... ECS Journal of Solid State Science and Technology 9 (1), 015018, 2019 | 15 | 2019 |
| Bottom tunnel junction blue light-emitting field-effect transistors S Bharadwaj, K Lee, K Nomoto, A Hickman, L van Deurzen, V Protasenko, ... Applied Physics Letters 117 (3), 2020 | 10 | 2020 |
| Highly linear and efficient mm-Wave GaN HEMTs and MMICs J Moon, B Grabar, J Wong, J Tai, E Arkun, DV Morales, C Dao, ... 2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 302-304, 2022 | 8 | 2022 |
| Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs L van Deurzen, MG Ruiz, K Lee, H Turski, S Bharadwaj, R Page, ... Journal of Physics D: Applied Physics 54 (49), 495106, 2021 | 8 | 2021 |
| Enhancing wall-plug efficiency for deep-UV light-emitting diodes: From crystal growth to devices SM Islam, V Protasenko, S Bharadwaj, J Verma, K Lee, H Xing, D Jena Light-Emitting Diodes: Materials, Processes, Devices and Applications, 337-395, 2019 | 7 | 2019 |
| Blue (In, Ga) N light-emitting diodes with buried n+–p+ tunnel junctions by plasma-assisted molecular beam epitaxy YJ Cho, S Bharadwaj, Z Hu, K Nomoto, U Jahn, HG Xing, D Jena Japanese Journal of Applied Physics 58 (6), 060914, 2019 | 6 | 2019 |
| Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature K Nomoto, SJ Bader, K Lee, S Bharadwaj, Z Hu, HG Xing, D Jena 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 6 | 2017 |
| Efficient InGaN p-contacts for deep-UV light emitting diodes K Lee, S Bharadwaj, V Protasenko, H Xing, D Jena 2019 Device Research Conference (DRC), 171-172, 2019 | 5 | 2019 |
| Platforms enabled by buried tunnel junction for integrated photonic and electronic systems H Turski, D Jena, HG Xing, S Bharadwaj, AA Chaney, K Nomoto US Patent 11,476,383, 2022 | 4 | 2022 |
| Enhanced efficiency in bottom tunnel junction InGaN blue LEDs L van Deurzen, S Bharadwaj, K Lee, V Protasenko, H Turski, HG Xing, ... Light-Emitting Devices, Materials, and Applications XXV 11706, 30-35, 2021 | 3 | 2021 |
| Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design H Turski, S Bharadwaj, M Siekacz, G Muziol, M Chlipala, M Zak, M Hajdel, ... Gallium Nitride Materials and Devices XV 11280, 111-116, 2020 | 3 | 2020 |
| High-temperature p-type polarization doped AlGaN cladding for sub-250 nm deep-UV quantum well LEDs by MBE S Bharadwaj, SM Islam, K Lee, A Devine, V Protasenko, S Rouvimov, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 3 | 2017 |
