| Chips classification for suppressing transient current imbalance of parallel-connected silicon carbide MOSFETs J Ke, Z Zhao, P Sun, H Huang, J Abuogo, X Cui IEEE Transactions on Power Electronics 35 (4), 3963-3972, 2019 | 47 | 2019 |
| Influence of device parameters spread on current distribution of paralleled silicon carbide MOSFETs J Ke, Z Zhao, P Sun, H Huang, J Abuogo, X Cui Journal of power electronics 19 (4), 1054-1067, 2019 | 24 | 2019 |
| New screening method for improving transient current sharing of paralleled SiC MOSFETs J Ke, Z Zhao, P Sun, H Huang, J Abuogo, X Cui 2018 International Power Electronics Conference (IPEC-Niigata 2018-ECCE Asia …, 2018 | 22 | 2018 |
| Effect of threshold voltage hysteresis on switching characteristics of silicon carbide MOSFETs Y Cai, H Xu, P Sun, J Ke, E Deng, Z Zhao, X Li, Z Chen IEEE Transactions on Electron Devices 68 (10), 5014-5021, 2021 | 21 | 2021 |
| An online junction temperature monitoring correction method for SiC MOSFETs at different parasitic parameters P Sun, Y Guo, T Wu, Z Zhao, P Lai, Z Chen, L Qi, X Cui IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (5 …, 2021 | 16 | 2021 |
| Device screening strategy for suppressing current imbalance in parallel-connected SiC MOSFETs B Zhao, Q Yu, P Sun, Y Cai, Z Zhao IEEE Transactions on device and materials reliability 21 (4), 556-568, 2021 | 15 | 2021 |
| LTCC based current sensor for silicon carbide power module integration P Sun, X Cui, S Huang, P Lai, Z Zhao, Z Chen IEEE Transactions on Power Electronics 37 (2), 1605-1614, 2021 | 13 | 2021 |
| Influence of parasitic capacitances on transient current distribution of paralleled SiC MOSFETs J Ke, H Huang, P Sun, J Abuogo, Z Zhao, X Cui 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2018 | 9 | 2018 |
| Experimental study of the factors affecting on SiC MOSFET switching performance J Ke, P Sun, X Zhang, Z Zhao, X Cui PCIM Asia 2017; International Exhibition and Conference for Power …, 2017 | 8 | 2017 |
| Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split C–V Method Under Bias Temperature Instability Conditions Y Cai, C Chen, Z Zhao, P Sun, X Li, M Zhang, H Wang, Z Chen, HP Nee IEEE Transactions on Power Electronics 38 (5), 6081-6093, 2023 | 7 | 2023 |
| Layout-dominated dynamic imbalanced current analysis and its suppression strategy of parallel SiC MOSFETs B Zhao, P Sun, Q Yu, Y Cai, Z Zhao IEEE Transactions on device and materials reliability 21 (3), 394-404, 2021 | 7 | 2021 |
| Influence of package parasitic inductance on transient current distribution characteristics of press pack igbt S Mo, Z Zhao, P Sun, Y Lu, X Tang 2017 Sixth Asia-Pacific Conference on Antennas and Propagation (APCAP), 1-3, 2017 | 6 | 2017 |
| Modeling and simulation of SiC MOSFET turn-off oscillation under influence of parasitic parameter J Ke, Z Zhao, Z Xie, C Wei, P Sun 2017 Sixth Asia-Pacific Conference on Antennas and Propagation (APCAP), 1-3, 2017 | 6 | 2017 |
| Experimental Study of Short-circuit Characteristics of 1 200 V/36 A SiC MOSFET C Wei, P Sun, J Ke, Z Zhao, F Yang Smart Grid 5 (8), 766-772, 2017 | 5 | 2017 |
| Effect of common branch impedance coupling and mutual inductance on current sharing of paralleled SiC MOSFETs with different layouts B Zhao, J Ke, Q Yu, P Sun, Y Cai, Z Zhao IET Power Electronics 15 (1), 43-56, 2022 | 4 | 2022 |
| Chip Screening method for suppressing current imbalance of parallel-Connected SiC MOSFETs B Zhao, P Sun, Q Yu, Y Cai, J Cai, Z Zhao 2021 4th International Conference on Energy, Electrical and Power …, 2021 | 4 | 2021 |
| An optimized voltage clamp circuit for accurate power semiconductor device on-state losses measurement Q Yu, P Sun, B Zhao, Y Cai, Z Zhao 2021 4th International Conference on Energy, Electrical and Power …, 2021 | 4 | 2021 |
| Influence of the Interface Traps Distribution on IV and CV Characteristics of SiC MOSFET Evaluated by TCAD Simulations Y Cai, H Xu, P Sun, Z Zhao, Z Chen 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2021 | 3 | 2021 |
| Influence of chip parameters spread on power loss sharing of paralleled SiC MOSFETs P Sun, Z Zhao, Y Cai, Q Yu, J Ke, X Li, J Li, X Tang, F Yang, X Cui 2019 21st European Conference on Power Electronics and Applications (EPE'19 …, 2019 | 3 | 2019 |
| Influence of Parasitic Parameters on Dynamic Threshold Voltage Hysteresis of Silicon Carbide MOSFETs Y Cai, T Sun, P Sun, Z Zhao, X Li, H Wang, Z Chen, B Cao CSEE Journal of Power and Energy Systems 9 (6), 2251-2262, 2023 | 2 | 2023 |
