| Electron-beam-induced current study of grain boundaries in multicrystalline silicon J Chen, T Sekiguchi, D Yang, F Yin, K Kido, S Tsurekawa Journal of Applied Physics 96 (10), 5490-5495, 2004 | 301 | 2004 |
| Carrier recombination activity and structural properties of small-angle grain boundaries in multicrystalline silicon J Chen, T Sekiguchi Japanese Journal of Applied Physics 46 (10R), 6489, 2007 | 128 | 2007 |
| Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon J Chen, T Sekiguchi, R Xie, P Ahmet, T Chikyo, D Yang, S Ito, F Yin Scripta Materialia 52 (12), 1211-1215, 2005 | 128 | 2005 |
| Recombination activity of Σ3 boundaries in boron-doped multicrystalline silicon: Influence of iron contamination J Chen, D Yang, Z Xi, T Sekiguchi Journal of applied physics 97 (3), 2005 | 112 | 2005 |
| Segregation behaviors and radial distribution of dopant atoms in silicon nanowires N Fukata, S Ishida, S Yokono, R Takiguchi, J Chen, T Sekiguchi, ... Nano letters 11 (2), 651-656, 2011 | 87 | 2011 |
| Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation N Fukata, J Chen, T Sekiguchi, N Okada, K Murakami, T Tsurui, S Ito Applied physics letters 89 (20), 2006 | 70 | 2006 |
| Structural characterization and iron detection at Σ3 grain boundaries in multicrystalline silicon B Chen, J Chen, T Sekiguchi, M Saito, K Kimoto Journal of Applied Physics 105 (11), 2009 | 63 | 2009 |
| Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode B Chen, J Chen, T Sekiguchi, T Ohyanagi, H Matsuhata, A Kinoshita, ... Applied Physics Letters 93 (3), 2008 | 59 | 2008 |
| Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation N Fukata, J Chen, T Sekiguchi, S Matsushita, T Oshima, N Uchida, ... Applied physics letters 90 (15), 2007 | 59 | 2007 |
| Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination J Chen, D Yang, Z Xi, T Sekiguchi Physica B: Condensed Matter 364 (1-4), 162-169, 2005 | 56 | 2005 |
| Texturization of cast multicrystalline silicon for solar cells Z Xi, D Yang, W Dan, C Jun, X Li, D Que Semiconductor science and technology 19 (3), 485, 2004 | 50 | 2004 |
| Correlation between residual strain and electrically active grain boundaries in multicrystalline silicon J Chen, B Chen, T Sekiguchi, M Fukuzawa, M Yamada Applied Physics Letters 93 (11), 2008 | 42 | 2008 |
| The characterization of high quality multicrystalline silicon by the electron beam induced current method J Chen, T Sekiguchi, S Nara, D Yang Journal of Physics: Condensed Matter 16 (2), S211, 2003 | 42 | 2003 |
| Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation N Fukata, M Mitome, Y Bando, M Seoka, S Matsushita, K Murakami, ... Applied physics letters 93 (20), 2008 | 41 | 2008 |
| Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion J Chen, W Yi, T Kimura, S Takashima, M Edo, T Sekiguchi Applied Physics Express 12 (5), 051010, 2019 | 36 | 2019 |
| Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal RR Prakash, T Sekiguchi, K Jiptner, Y Miyamura, J Chen, H Harada, ... Journal of crystal growth 401, 717-719, 2014 | 36 | 2014 |
| High quality multicrystalline silicon grown by multi-stage solidification control method S Nara, T Sekiguchi, J Chen The European Physical Journal Applied Physics 27 (1-3), 389-392, 2004 | 35 | 2004 |
| Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization Y Miyamura, H Harada, K Jiptner, J Chen, RR Prakash, S Nakano, B Gao, ... Journal of crystal growth 401, 133-136, 2014 | 30 | 2014 |
| Influence of implanted Mg concentration on defects and Mg distribution in GaN A Kumar, W Yi, J Uzuhashi, T Ohkubo, J Chen, T Sekiguchi, R Tanaka, ... Journal of Applied Physics 128 (6), 2020 | 23 | 2020 |
| Grain boundary interactions in multicrystalline silicon grown from small randomly oriented seeds RR Prakash, K Jiptner, J Chen, Y Miyamura, H Harada, T Sekiguchi Applied Physics Express 8 (3), 035502, 2015 | 23 | 2015 |
