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Yongin Cho
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Low‐Temperature Plasma‐Assisted Growth of Large‐Area MoS2 for Transparent Phototransistors
A Bala, N Liu, A Sen, Y Cho, P Pujar, B So, S Kim
Advanced Functional Materials 32 (44), 2205106, 2022
202022
High-performance non-volatile InGaZnO based flash memory device embedded with a monolayer Au nanoparticles
M Naqi, N Kwon, SH Jung, P Pujar, HW Cho, YI Cho, HK Cho, B Lim, ...
Nanomaterials 11 (5), 1101, 2021
122021
Transparent and Flexible Copper Iodide Resistive Memories Processed with a Dissolution-Recrystallization Solution Technique
A Bala, P Pujar, D Daw, Y Cho, M Naqi, H Cho, S Gandla, S Kim
ACS Applied Electronic Materials 4 (8), 3973-3979, 2022
92022
Flexible Platform Oriented: Unipolar‐Type Hybrid Dual‐Channel Scalable Field‐Effect Phototransistors Array Based on Tellurium Nanowires and Tellurium‐Film with Highly Linear …
M Naqi, KH Choi, Y Cho, HY Rho, H Cho, P Pujar, N Liu, HS Kim, JY Choi, ...
Advanced Electronic Materials 8 (7), 2101331, 2022
82022
Expeditiously Crystallized Pure Orthorhombic-Hf0.5Zr0.5O2 for Negative Capacitance Field Effect Transistors
H Cho, P Pujar, M Choi, M Naqi, Y Cho, HY Rho, J Lee, S Kim
ACS Applied Materials & Interfaces 13 (50), 60250-60260, 2021
62021
High-Speed Current Switching of Inverted-Staggered Bottom-Gate a-IGZO-Based Thin-Film Transistors with Highly Stable Logic Circuit Operations
M Naqi, Y Cho, S Kim
ACS Applied Electronic Materials 5 (6), 3378-3383, 2023
52023
The trend of synthesized 2D materials toward artificial intelligence: memory technology and neuromorphic computing
M Naqi, Y Cho, A Bala, S Kim
Materials Today Electronics, 100052, 2023
42023
Large scale integrated IGZO crossbar memristor array based artificial neural architecture for scalable in-memory computing
M Naqi, T Kim, Y Cho, P Pujar, J Park, S Kim
Materials Today Nano 25, 100441, 2024
32024
Ultrathin Al‐Assisted Al2O3 Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter
H Cho, P Pujar, YI Cho, S Hong, S Kim
Advanced Electronic Materials 8 (4), 2101012, 2022
32022
Low temperature processed, highly stable CMOS inverter by integrating Zn-ON and tellurium thin-film transistors
M Naqi, SC Jang, Y Cho, JM Park, JO Oh, HY Rho, HS Kim, S Kim
Journal of Information Display 24 (3), 199-204, 2023
22023
Ferroelectric La-doped HfO2 deposited via chemical solution on silicon for tellurium field-effect phototransistors
U Jeong, HY Rho, H Cho, M Naqi, JO Oh, Y Cho, P Pujar, S Kim
Journal of Alloys and Compounds 968, 172082, 2023
12023
Integration of IGZO-based Memristor and Pt-based Temperature Sensor for Enhanced Artificial Nociceptor System
M Naqi, Y Yu, Y Cho, S Kang, MT Khine, M Lee, S Kim
Materials Today Nano, 100491, 2024
2024
Augmented Optoelectronic Quantum Dot‐Enhanced Heterogeneous IGZO‐Te Photodiode for Artificial Synaptic Image Processing Applications
R Dutta, M Naqi, Y Cho, J Oh, T Kim, U Jeong, Y Yu, Y Lee, S Kim
Advanced Functional Materials, 2315058, 2024
2024
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