| MoS2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation J Jadwiszczak, D Keane, P Maguire, CP Cullen, Y Zhou, H Song, ... ACS Nano 13 (12), 14262–14273, 2019 | 114 | 2019 |
| Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2 J Jadwiszczak, C O’Callaghan, Y Zhou, DS Fox, E Weitz, D Keane, ... Science Advances 4 (3), eaao5031, 2018 | 94 | 2018 |
| Defect sizing, separation, and substrate effects in ion-irradiated monolayer two-dimensional materials P Maguire, DS Fox, Y Zhou, Q Wang, M O’Brien, J Jadwiszczak, ... Physical Review B 98 (134109), 2018 | 60 | 2018 |
| Programmable graphene doping via electron beam irradiation Y Zhou, J Jadwiszczak, D Keane, Y Chen, D Yu, H Zhang Nanoscale 9 (25), 8657-8664, 2017 | 28 | 2017 |
| Photoresponsivity enhancement in monolayer MoS2 by rapid O2: Ar plasma treatment J Jadwiszczak, G Li, CP Cullen, JJ Wang, P Maguire, GS Duesberg, ... Applied Physics Letters 114 (9), 2019 | 20 | 2019 |
| Flexible ultrasound transceiver array for non-invasive surface-conformable imaging enabled by geometric phase correction J Elloian, J Jadwiszczak, V Arslan, JD Sherman, DO Kessler, KL Shepard Scientific Reports 12 (1), 1-12, 2022 | 16 | 2022 |
| Mixed-Dimensional 1D/2D van der Waals Heterojunction Diodes and Transistors in the Atomic Limit J Jadwiszczak, J Sherman, D Lynall, Y Liu, B Penkov, E Young, ... ACS Nano 16 (1), 1639–1648, 2022 | 16 | 2022 |
| Plasma Treatment of Ultrathin Layered Semiconductors for Electronic Device Applications J Jadwiszczak, DJ Kelly, J Guo, Y Zhou, H Zhang ACS Applied Electronic Materials 3 (4), 1505-1529, 2021 | 16 | 2021 |
| Precise milling of nano-gap chains in graphene with a focused helium ion beam Y Zhou, P Maguire, J Jadwiszczak, M Muruganathan, H Mizuta, H Zhang Nanotechnology 27 (32), 325302, 2016 | 16 | 2016 |
| Controllable Thermal Oxidation and Photoluminescence Enhancement in Quasi-1D van der Waals ZrS3 Flakes J Guo, J Tao, Z Zhang, L Fei, D Li, J Jadwiszczak, X Wang, Y Guo, X Liao, ... ACS Applied Electronic Materials 2 (11), 3756-3764, 2020 | 14 | 2020 |
| Defect-Moderated Oxidative Etching of MoS2 P Maguire, J Jadwiszczak, M O'Brien, D Keane, GS Duesberg, N McEvoy, ... Journal of Applied Physics 126, 164301, 2019 | 13 | 2019 |
| On the temperature dependence of the piezoelectric response of prepoled poly (vinylidene fluoride) films JD Sherman, J Elloian, J Jadwiszczak, KL Shepard ACS Applied Polymer Materials 2 (11), 5110-5120, 2020 | 11 | 2020 |
| Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS2 field-effect transistors J Jadwiszczak, P Maguire, CP Cullen, GS Duesberg, H Zhang Beilstein Journal of Nanotechnology 11 (1), 1329-1335, 2020 | 6 | 2020 |
| On the switching mechanism and optimisation of ion irradiation enabled 2D MoS 2 memristors S Aldana, J Jadwiszczak, H Zhang Nanoscale 15 (13), 6408-6416, 2023 | 5 | 2023 |
| Suppression of the shear Raman mode in defective bilayer MoS2 P Maguire, C Downing, J Jadwiszczak, M O’Brien, D Keane, JB McManus, ... Journal of Applied Physics 125 (6), 2019 | 5 | 2019 |
| Low-temperature electrical conduction of plasma-treated bilayer MoS2 J Jadwiszczak, Y Zhou, H Zhang MRS Communications, 1-7, 2018 | 4 | 2018 |
| Enabling MoS2 memtransistors via localised helium ion beam irradiation J Jadwiszczak, D Keane, P Maguire, Y Zhou, HD Song, J Boland, ... JSAP Annual Meetings Extended Abstracts The 80th JSAP Autumn Meeting 2019 …, 2019 | | 2019 |
Hongzhou ZhangTrinity College Dublin, University of Dublin在 tcd.ie 的电子邮件经过验证
