Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices GH Jessen, RC Fitch, JK Gillespie, G Via, A Crespo, D Langley, ... IEEE Transactions on Electron Devices 54 (10), 2589-2597, 2007 | 531* | 2007 |
AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ... Applied physics letters 82 (15), 2530-2532, 2003 | 175 | 2003 |
Wet chemical digital etching of GaAs at room temperature GC DeSalvo, CA Bozada, JL Ebel, DC Look, JP Barrette, CLA Cerny, ... Journal of The Electrochemical Society 143 (11), 3652, 1996 | 151 | 1996 |
High-power Ka-band performance of AlInN/GaN HEMT with 9.8-nm-thin barrier A Crespo, MM Bellot, KD Chabak, JK Gillespie, GH Jessen, V Miller, ... IEEE Electron Device Letters 31 (1), 2-4, 2009 | 121 | 2009 |
High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal K Nakano, CA Bozada, TK Quach, GC DeSalvo, GD Via, RW Dettmer, ... US Patent 5,698,870, 1997 | 111* | 1997 |
Full-wafer characterization of AlGaN/GaN HEMTs on free-standing CVD diamond substrates KD Chabak, JK Gillespie, V Miller, A Crespo, J Roussos, M Trejo, ... IEEE electron device letters 31 (2), 99-101, 2009 | 97 | 2009 |
ScAlN/GaN high-electron-mobility transistors with 2.4-A/mm current density and 0.67-S/mm transconductance AJ Green, JK Gillespie, RC Fitch, DE Walker, M Lindquist, A Crespo, ... IEEE Electron Device Letters 40 (7), 1056-1059, 2019 | 83 | 2019 |
Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕ GaN high electron mobility transistors HT Wang, BS Kang, F Ren, RC Fitch, JK Gillespie, N Moser, G Jessen, ... Applied Physics Letters 87 (17), 2005 | 83 | 2005 |
Implementation of High-Power-Density-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process RC Fitch, DE Walker, AJ Green, SE Tetlak, JK Gillespie, RD Gilbert, ... IEEE electron device letters 36 (10), 1004-1007, 2015 | 70 | 2015 |
AlGaN/GaN HEMT on diamond technology demonstration GH Jessen, JK Gillespie, GD Via, A Crespo, D Langley, J Wasserbauer, ... 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 271-274, 2006 | 66 | 2006 |
Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs JK Gillespie, RC Fitch, J Sewell, R Dettmer, GD Via, A Crespo, TJ Jenkins, ... IEEE Electron Device Letters 23 (9), 505-507, 2002 | 65 | 2002 |
RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz GH Jessen, JK Gillespie, GD Via, A Crespo, D Langley, ME Aumer, ... IEEE electron device letters 28 (5), 354-356, 2007 | 58 | 2007 |
Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors B Luo, J Kim, F Ren, JK Gillespie, RC Fitch, J Sewell, R Dettmer, GD Via, ... Applied physics letters 82 (9), 1428-1430, 2003 | 56 | 2003 |
RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ... IEEE Electron Device Letters 41 (8), 1181-1184, 2020 | 55 | 2020 |
Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using - or W-based metallization B Luo, F Ren, RC Fitch, JK Gillespie, T Jenkins, J Sewell, D Via, A Crespo, ... Applied physics letters 82 (22), 3910-3912, 2003 | 52 | 2003 |
Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors B Luo, R Mehandru, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ... Journal of The Electrochemical Society 149 (11), G613, 2002 | 52 | 2002 |
Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors L Liu, CF Lo, Y Xi, Y Wang, F Ren, SJ Pearton, HY Kim, J Kim, RC Fitch, ... Journal of Vacuum Science & Technology B 31 (2), 2013 | 49 | 2013 |
Effective suppression of IV knee walk-out in AlGaN/GaN HEMTs for pulsed-IV pulsed-RF with a large signal network analyzer SJ Doo, P Roblin, GH Jessen, RC Fitch, JK Gillespie, NA Moser, A Crespo, ... IEEE Microwave and wireless components letters 16 (12), 681-683, 2006 | 44 | 2006 |
AlGaN/GaN ohmic contact resistance variations across epitaxial suppliers J Gillespie, A Crespo, R Fitch, G Jessen, G Via Solid-state electronics 49 (4), 670-672, 2005 | 43 | 2005 |
Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors BS Kang, R Mehandru, S Kim, F Ren, RC Fitch, JK Gillespie, N Moser, ... Applied physics letters 84 (23), 4635-4637, 2004 | 41 | 2004 |