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Geun-Young Yeom
Geun-Young Yeom
在 skku.edu 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Atomic layer etching apparatus and etching method using the same
G Yeom, WS Lim, P Sang-Duk, YY Kim, BJ Park, JK Yeon
US Patent App. 12/712,944, 2011
4482011
Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same
G Yeom, DH Lee, BJ Park, KJ Ahn
US Patent 7,919,142, 2011
3462011
Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics
E Singh, P Singh, KS Kim, GY Yeom, HS Nalwa
ACS applied materials & interfaces 11 (12), 11061-11105, 2019
3382019
Neutral beam-assisted atomic layer chemical vapor deposition apparatus and method of processing substrate using the same
G Yeom, BJ Park, SW Kim, JT Lim
US Patent 7,799,706, 2010
3342010
Atomically Thin-Layered Molybdenum Disulfide (MoS2) for Bulk-Heterojunction Solar Cells
E Singh, KS Kim, GY Yeom, HS Nalwa
ACS applied materials & interfaces 9 (4), 3223-3245, 2017
2632017
High‐Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment
J Shim, A Oh, DH Kang, S Oh, SK Jang, J Jeon, MH Jeon, M Kim, C Choi, ...
Advanced Materials 28 (32), 6985-6992, 2016
2372016
Low‐temperature synthesis of large‐scale molybdenum disulfide thin films directly on a plastic substrate using plasma‐enhanced chemical vapor deposition
C Ahn, J Lee, HU Kim, H Bark, M Jeon, GH Ryu, Z Lee, GY Yeom, K Kim, ...
Advanced Materials 27 (35), 5223-5229, 2015
2172015
Recent advances in doping of molybdenum disulfide: industrial applications and future prospects
VP Pham, GY Yeom
Advanced Materials 28 (41), 9024-9059, 2016
2152016
Two-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cells
E Singh, KS Kim, GY Yeom, HS Nalwa
RSC advances 7 (45), 28234-28290, 2017
1982017
Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane
DH Kang, J Shim, SK Jang, J Jeon, MH Jeon, GY Yeom, WS Jung, ...
ACS nano 9 (2), 1099-1107, 2015
1652015
Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching
TW Kim, JI Song, JH Jang, DH Kim, SD Park, JW Bae, GY Yeom
Applied physics letters 91 (10), 2007
1632007
A High‐Performance WSe2/h‐BN Photodetector using a Triphenylphosphine (PPh3)‐Based n‐Doping Technique
SH Jo, DH Kang, J Shim, J Jeon, MH Jeon, G Yoo, J Kim, J Lee, GY Yeom, ...
Advanced Materials 28 (24), 4824-4831, 2016
1612016
A study of transparent indium tin oxide (ITO) contact to p-GaN
DW Kim, YJ Sung, JW Park, GY Yeom
Thin Solid Films 398, 87-92, 2001
1272001
Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme
SH Park, J Kim, H Jeon, T Sakong, SN Lee, S Chae, Y Park, CH Jeong, ...
Applied Physics Letters 83 (11), 2121-2123, 2003
1252003
Atomic layer etching of graphene for full graphene device fabrication
WS Lim, YY Kim, H Kim, S Jang, N Kwon, BJ Park, JH Ahn, I Chung, ...
Carbon 50 (2), 429-435, 2012
1202012
A comparative study of CF4/O2/Ar and C4F8/O2/Ar plasmas for dry etching applications
I Chun, A Efremov, GY Yeom, KH Kwon
Thin solid films 579, 136-143, 2015
1062015
Atomic Layer Etching Mechanism of MoS2 for Nanodevices
KS Kim, KH Kim, Y Nam, J Jeon, S Yim, E Singh, JY Lee, SJ Lee, YS Jung, ...
ACS Applied Materials & Interfaces 9 (13), 11967-11976, 2017
1032017
Controlled Layer-by-Layer Etching of MoS2
TZ Lin, BT Kang, MH Jeon, C Huffman, JH Jeon, SJ Lee, W Han, JY Lee, ...
ACS applied materials & interfaces 7 (29), 15892-15897, 2015
992015
Number of graphene layers as a modulator of the open-circuit voltage of graphene-based solar cell
K Ihm, JT Lim, KJ Lee, JW Kwon, TH Kang, S Chung, S Bae, JH Kim, ...
Applied Physics Letters 97 (3), 2010
952010
Orientation dependence of the fracture behavior of graphene
YI Jhon, YM Jhon, GY Yeom, MS Jhon
Carbon 66, 619-628, 2014
942014
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