| Atomic layer etching apparatus and etching method using the same G Yeom, WS Lim, P Sang-Duk, YY Kim, BJ Park, JK Yeon US Patent App. 12/712,944, 2011 | 448 | 2011 |
| Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same G Yeom, DH Lee, BJ Park, KJ Ahn US Patent 7,919,142, 2011 | 346 | 2011 |
| Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics E Singh, P Singh, KS Kim, GY Yeom, HS Nalwa ACS applied materials & interfaces 11 (12), 11061-11105, 2019 | 338 | 2019 |
| Neutral beam-assisted atomic layer chemical vapor deposition apparatus and method of processing substrate using the same G Yeom, BJ Park, SW Kim, JT Lim US Patent 7,799,706, 2010 | 334 | 2010 |
| Atomically Thin-Layered Molybdenum Disulfide (MoS2) for Bulk-Heterojunction Solar Cells E Singh, KS Kim, GY Yeom, HS Nalwa ACS applied materials & interfaces 9 (4), 3223-3245, 2017 | 263 | 2017 |
| High‐Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment J Shim, A Oh, DH Kang, S Oh, SK Jang, J Jeon, MH Jeon, M Kim, C Choi, ... Advanced Materials 28 (32), 6985-6992, 2016 | 237 | 2016 |
| Low‐temperature synthesis of large‐scale molybdenum disulfide thin films directly on a plastic substrate using plasma‐enhanced chemical vapor deposition C Ahn, J Lee, HU Kim, H Bark, M Jeon, GH Ryu, Z Lee, GY Yeom, K Kim, ... Advanced Materials 27 (35), 5223-5229, 2015 | 217 | 2015 |
| Recent advances in doping of molybdenum disulfide: industrial applications and future prospects VP Pham, GY Yeom Advanced Materials 28 (41), 9024-9059, 2016 | 215 | 2016 |
| Two-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cells E Singh, KS Kim, GY Yeom, HS Nalwa RSC advances 7 (45), 28234-28290, 2017 | 198 | 2017 |
| Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane DH Kang, J Shim, SK Jang, J Jeon, MH Jeon, GY Yeom, WS Jung, ... ACS nano 9 (2), 1099-1107, 2015 | 165 | 2015 |
| Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching TW Kim, JI Song, JH Jang, DH Kim, SD Park, JW Bae, GY Yeom Applied physics letters 91 (10), 2007 | 163 | 2007 |
| A High‐Performance WSe2/h‐BN Photodetector using a Triphenylphosphine (PPh3)‐Based n‐Doping Technique SH Jo, DH Kang, J Shim, J Jeon, MH Jeon, G Yoo, J Kim, J Lee, GY Yeom, ... Advanced Materials 28 (24), 4824-4831, 2016 | 161 | 2016 |
| A study of transparent indium tin oxide (ITO) contact to p-GaN DW Kim, YJ Sung, JW Park, GY Yeom Thin Solid Films 398, 87-92, 2001 | 127 | 2001 |
| Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme SH Park, J Kim, H Jeon, T Sakong, SN Lee, S Chae, Y Park, CH Jeong, ... Applied Physics Letters 83 (11), 2121-2123, 2003 | 125 | 2003 |
| Atomic layer etching of graphene for full graphene device fabrication WS Lim, YY Kim, H Kim, S Jang, N Kwon, BJ Park, JH Ahn, I Chung, ... Carbon 50 (2), 429-435, 2012 | 120 | 2012 |
| A comparative study of CF4/O2/Ar and C4F8/O2/Ar plasmas for dry etching applications I Chun, A Efremov, GY Yeom, KH Kwon Thin solid films 579, 136-143, 2015 | 106 | 2015 |
| Atomic Layer Etching Mechanism of MoS2 for Nanodevices KS Kim, KH Kim, Y Nam, J Jeon, S Yim, E Singh, JY Lee, SJ Lee, YS Jung, ... ACS Applied Materials & Interfaces 9 (13), 11967-11976, 2017 | 103 | 2017 |
| Controlled Layer-by-Layer Etching of MoS2 TZ Lin, BT Kang, MH Jeon, C Huffman, JH Jeon, SJ Lee, W Han, JY Lee, ... ACS applied materials & interfaces 7 (29), 15892-15897, 2015 | 99 | 2015 |
| Number of graphene layers as a modulator of the open-circuit voltage of graphene-based solar cell K Ihm, JT Lim, KJ Lee, JW Kwon, TH Kang, S Chung, S Bae, JH Kim, ... Applied Physics Letters 97 (3), 2010 | 95 | 2010 |
| Orientation dependence of the fracture behavior of graphene YI Jhon, YM Jhon, GY Yeom, MS Jhon Carbon 66, 619-628, 2014 | 94 | 2014 |
