Studies on new chemically deposited photoconducting antimony trisulphide thin films O Savadogo, KC Mandal Solar energy materials and solar cells 26 (1-2), 117-136, 1992 | 249 | 1992 |
Optical properties of Nd 3+-and Tb 3+-doped KPb 2 Br 5 and RbPb 2 Br 5 with low nonradiative decay K Rademaker, WF Krupke, RH Page, SA Payne, K Petermann, G Huber, ... JOSA B 21 (12), 2117-2129, 2004 | 105 | 2004 |
Low Cost Schottky Barrier Solar Cells Fabricated on CdSe and Sb2 S 3 Films Chemically Deposited with Silicotungstic Acid O Savadogo, KC Mandal Journal of the Electrochemical Society 141 (10), 2871, 1994 | 95 | 1994 |
Ultrafast Electronic Relaxation Dynamics in PbI2 Semiconductor Colloidal Nanoparticles: A Femtosecond Transient Absorption Study A Sengupta, B Jiang, KC Mandal, JZ Zhang The Journal of Physical Chemistry B 103 (16), 3128-3137, 1999 | 93 | 1999 |
High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis SK Chaudhuri, KJ Zavalla, KC Mandal Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2013 | 88 | 2013 |
Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach SK Chaudhuri, KJ Zavalla, KC Mandal Applied Physics Letters 102 (3), 2013 | 78 | 2013 |
Characterizations of Antimony Tri‐Sulfide Chemically Deposited with Silicotungstic Acid O Savadogo, KC Mandal Journal of the Electrochemical Society 139 (1), L16, 1992 | 70 | 1992 |
Low Energy X-Ray and-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer KC Mandal, PG Muzykov, SK Chaudhuri, JR Terry IEEE Transactions on Nuclear Science 60 (4), 2888-2893, 2013 | 66 | 2013 |
Characterization of semi-insulating 4H silicon carbide for radiation detectors KC Mandal, RM Krishna, PG Muzykov, S Das, TS Sudarshan IEEE Transactions on Nuclear Science 58 (4), 1992-1999, 2011 | 57 | 2011 |
Characterization of Low-Defectand CdTe Crystals for High-Performance Frisch Collar Detectors KC Mandal, SH Kang, M Choi, A Kargar, MJ Harrison, DS McGregor, ... IEEE Transactions on Nuclear Science 54 (4), 802-806, 2007 | 57 | 2007 |
In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge KC Mandal, F Ozanam, JN Chazalviel Applied physics letters 57 (26), 2788-2790, 1990 | 56 | 1990 |
III–VI chalcogenide semiconductor crystals for broadband tunable THz sources and sensors KC Mandal, SH Kang, M Choi, J Chen, XC Zhang, JM Schleicher, ... IEEE Journal of Selected Topics in Quantum Electronics 14 (2), 284-288, 2008 | 55 | 2008 |
Low‐cost technique for preparing n‐Sb2S3/p‐Si heterojunction solar cells O Savadogo, KC Mandal Applied physics letters 63 (2), 228-230, 1993 | 55 | 1993 |
Ultrafast Electronic Relaxation Dynamics in Layered Iodide Semiconductors: A Comparative Study of Colloidal BiI3 and PbI2 Nanoparticles A Sengupta, KC Mandal, JZ Zhang The Journal of Physical Chemistry B 104 (40), 9396-9403, 2000 | 53 | 2000 |
Electronic structure of substitutional defects and vacancies in GaSe Z Rak, SD Mahanti, KC Mandal, NC Fernelius Journal of Physics and Chemistry of Solids 70 (2), 344-355, 2009 | 50 | 2009 |
Advances in high-resolution radiation detection using 4H-SiC epitaxial layer devices KC Mandal, JW Kleppinger, SK Chaudhuri Micromachines 11 (3), 254, 2020 | 49 | 2020 |
Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies MA Mannan, SK Chaudhuri, KV Nguyen, KC Mandal Journal of Applied Physics 115 (22), 2014 | 49 | 2014 |
Doping dependence of electronic and mechanical properties of and from first principles Z Rak, SD Mahanti, KC Mandal, NC Fernelius Physical Review B—Condensed Matter and Materials Physics 82 (15), 155203, 2010 | 49 | 2010 |
Correlation of deep levels with detector performance in 4H-SiC epitaxial Schottky barrier alpha detectors KC Mandal, SK Chaudhuri, KV Nguyen, MA Mannan IEEE Transactions on Nuclear Science 61 (4), 2338-2344, 2014 | 48 | 2014 |
Defect levels in Cu2ZnSn (SxSe1− x) 4 solar cells probed by current-mode deep level transient spectroscopy S Das, SK Chaudhuri, RN Bhattacharya, KC Mandal Applied Physics Letters 104 (19), 2014 | 48 | 2014 |