| Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon JJ Kopanski, JF Marchiando, JR Lowney Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 153 | 1996 |
| Influence of Metal–MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts H Yuan, G Cheng, L You, H Li, H Zhu, W Li, JJ Kopanski, YS Obeng, ... ACS applied materials & interfaces 7 (2), 1180-1187, 2015 | 124 | 2015 |
| Calibrated nanoscale dopant profiling using a scanning microwave microscope HP Huber, I Humer, M Hochleitner, M Fenner, M Moertelmaier, C Rankl, ... Journal of Applied Physics 111 (1), 2012 | 121 | 2012 |
| Characterization of two‐dimensional dopant profiles: Status and review AC Diebold, MR Kump, JJ Kopanski, DG Seiler Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 120 | 1996 |
| Thermal oxidation of 3C silicon carbide single‐crystal layers on silicon CD Fung, JJ Kopanski Applied physics letters 45 (7), 757-759, 1984 | 106 | 1984 |
| Two‐dimensional scanning capacitance microscopy measurements of cross‐sectioned very large scale integration test structures G Neubauer, A Erickson, CC Williams, JJ Kopanski, M Rodgers, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 103 | 1996 |
| Method and reference standards for measuring overlay in multilayer structures, and for calibrating imaging equipment as used in semiconductor manufacturing MW Cresswell, RA Allen, JJ Kopanski, LW Linholm US Patent 5,617,340, 1997 | 91 | 1997 |
| Precise alignment of single nanowires and fabrication of nanoelectromechanical switch and other test structures Q Li, SM Koo, CA Richter, MD Edelstein, JE Bonevich, JJ Kopanski, ... IEEE Transactions on Nanotechnology 6 (2), 256-262, 2007 | 77 | 2007 |
| Scanning capacitance microscopy measurement of two-dimensional dopant profiles across junctions JJ Kopanski, JF Marchiando, DW Berning, R Alvis, HE Smith Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 61 | 1998 |
| Silicon nanowire on oxide/nitride/oxide for memory application Q Li, X Zhu, HD Xiong, SM Koo, DE Ioannou, JJ Kopanski, JS Suehle, ... Nanotechnology 18 (23), 235204, 2007 | 60 | 2007 |
| Boron‐implanted 6H‐SiC diodes M Ghezzo, DM Brown, E Downey, J Kretchmer, JJ Kopanski Applied physics letters 63 (9), 1206-1208, 1993 | 60 | 1993 |
| Model database for determining dopant profiles from scanning capacitance microscope measurements JF Marchiando, JJ Kopanski, JR Lowney Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 54 | 1998 |
| Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors JJ Kopanski, JF Marchiando, JR Lowney Materials Science and Engineering: B 44 (1-3), 46-51, 1997 | 54 | 1997 |
| Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions A Erickson, L Sadwick, G Neubauer, J Kopanski, D Adderton, M Rogers Journal of electronic materials 25, 301-304, 1996 | 53 | 1996 |
| Ultrahigh-temperature microwave annealing of Al+-and P+-implanted 4H-SiC SG Sundaresan, MV Rao, Y Tian, MC Ridgway, JA Schreifels, ... Journal of applied physics 101 (7), 2007 | 50 | 2007 |
| Factors influencing the capacitance–voltage characteristics measured by the scanning capacitance microscope GH Buh, JJ Kopanski, JF Marchiando, AG Birdwell, Y Kuk Journal of applied physics 94 (4), 2680-2685, 2003 | 45 | 2003 |
| Carrier concentration dependence of the scanning capacitance microscopy signal in the vicinity of junctions JJ Kopanski, JF Marchiando, BG Rennex Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 45 | 2000 |
| Behavior of inversion layers in 3C silicon carbide RE Avila, JJ Kopanski, CD Fung Applied physics letters 49 (6), 334-336, 1986 | 41 | 1986 |
| Specific contact resistivity of metal-semiconductor contacts-a new, accurate method linked to spreading resistance GP Carver, JJ Kopanski, DB Novotny, RA Forman IEEE transactions on electron devices 35 (4), 489-497, 1988 | 35 | 1988 |
| Regression procedure for determining the dopant profile in semiconductors from scanning capacitance microscopy data JF Marchiando, JJ Kopanski Journal of applied physics 92 (10), 5798-5809, 2002 | 32 | 2002 |
