| Plasma induced damage on AlGaN/GaN heterostructure during gate opening for power devices O Fesiienko, C Petit-Etienne, M Darnon, A Soltani, H Maher, E Pargon Journal of Vacuum Science & Technology A 41 (3), 2023 | 4 | 2023 |
| Enhancing minority carrier lifetime in Ge: Insights from HF and HCl cleaning procedures A Chapotot, J Chrétien, O Fesiienko, E Pargon, J Cho, K Dessein, ... Journal of Vacuum Science & Technology A 42 (1), 2024 | | 2024 |
| Procédés de gravure à faible endommagement des surfaces: application à la gravure SiN sur AlGaN/GaN pour les transistors à haute mobilité électronique| Theses. fr O Fesiienko Université Grenoble Alpes, 2023 | | 2023 |
| Low-damage surface etching processes: application to SiN etching on AlGaN/GaN for high electron mobility transistors O Fesiienko Université de Sherbrooke (Québec, Canada); Université Grenoble Alpes, 2023 | | 2023 |
| Development of low-damage plasma etching processes for preserving AlGaN/GaN heterostructure integrity in MIS HEMT O Fesiienko, C Petit-Etienne, M Darnon, A Soltani, H Maher, E Pargon 2022 Compound Semiconductor Week (CSW), 1-2, 2022 | | 2022 |
| Development of low-damage plasma process using remote plasma source for the gate opening step in the AlGaN/GaN MOS HEMT integration O Fesiienko, C Petit-Etienne, M Darnon, A Soltani, H Maher, E Pargon Plasma Etch and Strip in Microtechnologies, 2022 | | 2022 |
| Comparative Study of Low Damage Plasma Etching Processes on the Integrity of AlGaN Layers Integrated in GaN HEMT During Gate Opening O Fesiienko, C Petit-Etienne, M Darnon, A Soltani, H Maher, E Pargon AVS 67 Virtual Symposium, 2021 | | 2021 |
| Impact of plasma etching process exposure on the integrity of AlN and AlGaN layers integrated in GaN heterojunction transistors (HEMTs) E Pargon, H Maher, C Petit-Etienne, A Soltani, M Darnon Journées nationales sur les technologies émergentes en micro-nano …, 2019 | | 2019 |
| Неорганічний матеріал медичного призначення на основі модифікованого нанопористого кремнію ОО Фесієнко | | 2018 |
