| Effect of p-type last barrier on efficiency droop of blue InGaN light-emitting diodes YK Kuo, MC Tsai, SH Yen, TC Hsu, YJ Shen IEEE Journal of Quantum Electronics 46 (8), 1214-1220, 2010 | 130 | 2010 |
| Improvement in light-output efficiency of near-ultraviolet InGaN–GaN LEDs fabricated on stripe patterned sapphire substrates YJ Lee, TC Hsu, HC Kuo, SC Wang, YL Yang, SN Yen, YT Chu, YJ Shen, ... Materials Science and Engineering: B 122 (3), 184-187, 2005 | 89 | 2005 |
| A scatterometer for measuring the bidirectional reflectance and transmittance of semiconductor wafers with rough surfaces YJ Shen, QZ Zhu, ZM Zhang Review of scientific instruments 74 (11), 4885-4892, 2003 | 87 | 2003 |
| Effect of n-type AlGaN layer on carrier transportation and efficiency droop of blue InGaN light-emitting diodes SH Yen, MC Tsai, ML Tsai, YJ Shen, TC Hsu, YK Kuo IEEE photonics technology letters 21 (14), 975-977, 2009 | 84 | 2009 |
| Bidirectional reflectance distribution function of rough silicon wafers YJ Shen, ZM Zhang, BK Tsai, DP DeWitt International Journal of Thermophysics 22, 1311-1326, 2001 | 63 | 2001 |
| A Monte Carlo model for predicting the effective emissivity of the silicon wafer in rapid thermal processing furnaces YH Zhou, YJ Shen, ZM Zhang, BK Tsai, DP DeWitt International Journal of Heat and Mass Transfer 45 (9), 1945-1949, 2002 | 53 | 2002 |
| Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes CK Li, HC Yang, TC Hsu, YJ Shen, AS Liu, YR Wu Journal of Applied Physics 113 (18), 2013 | 35 | 2013 |
| Enhancement of light power for blue InGaN LEDs by using low-indium-content InGaN barriers YK Kuo, MC Tsai, SH Yen, TC Hsu, YJ Shen IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1115-1121, 2009 | 32 | 2009 |
| Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes SH Yen, MC Tsai, ML Tsai, YJ Shen, TC Hsu, YK Kuo Applied Physics A 97, 705-708, 2009 | 22 | 2009 |
| Room-temperature, mid-infrared electroluminescence from single-stage intersubband -based edge emitters DP Xu, A Mirabedini, M D’Souza, S Li, D Botez, A Lyakh, YJ Shen, P Zory, ... Applied physics letters 85 (20), 4573-4575, 2004 | 20 | 2004 |
| Method of manufacturing a semiconductor structure and separating the semiconductor from a substrate S Chang, Y Hung-Chi, YJ Shen US Patent 8,664,087, 2014 | 16 | 2014 |
| Optoelectronic device and method for manufacturing the same WC Peng, TC Hsu, YJ Shen, CF Tsai US Patent 8,344,409, 2013 | 14 | 2013 |
| InGaN LEDs prepared on beta-Ga2O3 (-201) substrates K Iizuka, Y Morishima, A Kuramata, YJ Shen, CY Tsai, YY Su, G Liu, ... Gallium Nitride Materials and Devices X 9363, 267-272, 2015 | 10 | 2015 |
| Design and characterization of a bidirectional reflectometer YJ Shen, ZM Zhang International Heat Transfer Conference Digital Library, 2002 | 8 | 2002 |
| Impact of directional properties on the radiometric temperature measurement in rapid thermal processing YH Zhou, YJ Shen, ZM Zhang, BK Tsai, DP DeWitt the 8th International Conference on Advanced. Thermal Processing of …, 2000 | 8 | 2000 |
| Semiconductor power device Y Ya-Yu, YJ Shen, CC Liu US Patent 10,290,730, 2019 | 7 | 2019 |
| Semiconductor light-emitting device and manufacturing method thereof SN Yen, JT Chiu, YJ Shen, CF Tsai US Patent 7,615,773, 2009 | 7 | 2009 |
| Optoelectronic device and method for manufacturing the same WC Peng, TC Hsu, YJ Shen, CF Tsai US Patent 8,946,736, 2015 | 6 | 2015 |
| Light-emitting diode structure HC Yang, MC Hsu, TC Hsu, CC Yang, TY Tang, YS Chen, WY Shiao, ... US Patent App. 13/008,702, 2011 | 6 | 2011 |
| High electron mobility transistor and methods for manufacturing the same TU Shang-Ju, CC Liu, TC Chang, Y Ya-Yu, YJ Shen, JI Chyi US Patent 11,049,961, 2021 | 3 | 2021 |
