| High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices AM Hoang, A Dehzangi, S Adhikary, M Razeghi Scientific reports 6, 2016 | 142 | 2016 |
| Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors JO Kim, S Sengupta, AV Barve, YD Sharma, S Adhikary, SJ Lee, SK Noh, ... Applied Physics Letters 102 (1), 011131, 2013 | 104 | 2013 |
| Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs 1− x Sb x/AlAs 1− x Sb x type–II superlattices A Haddadi, A Dehzangi, R Chevallier, S Adhikary, M Razeghi Scientific reports 7 (1), 3379, 2017 | 93 | 2017 |
| Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures S Adhikary, N Halder, S Chakrabarti, S Majumdar, SK Ray, M Herrera, ... Journal of Crystal Growth 312 (5), 724-729, 2010 | 87 | 2010 |
| High-performance, long-wave (∼10.2 μm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping S Chakrabarti, S Adhikary, N Halder, Y Aytac, AGU Perera Applied Physics Letters 99 (18), 181102, 2011 | 74 | 2011 |
| Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure S Sengupta, JO Kim, AV Barve, S Adhikary, YD Sharma, N Gautam, ... Applied Physics Letters 100 (19), 191111, 2012 | 65 | 2012 |
| Background–limited long wavelength infrared InAs/InAs1− xSbx type-II superlattice-based photodetectors operating at 110 K A Haddadi, A Dehzangi, S Adhikary, R Chevallier, M Razeghi APL Materials 5 (3), 035502, 2017 | 56 | 2017 |
| High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1−xSbx superlattices A Haddadi, XV Suo, S Adhikary, P Dianat, R Chevallier, AM Hoang, ... Applied Physics Letters 107 (14), 141104, 2015 | 56 | 2015 |
| A multicolor, broadband (5–20 μm), quaternary-capped InAs/GaAs quantum dot infrared photodetector S Adhikary, Y Aytac, S Meesala, S Wolde, AG Unil Perera, S Chakrabarti Applied Physics Letters 101 (26), 261114, 2012 | 56 | 2012 |
| Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices A Haddadi, S Adhikary, A Dehzangi, M Razeghi Applied Physics Letters 109 (2), 021107, 2016 | 42 | 2016 |
| Confinement enhancing barriers for high performance quantum dots-in-a-well infrared detectors AV Barve, S Sengupta, JO Kim, YD Sharma, S Adhikary, TJ Rotter, SJ Lee, ... Applied Physics Letters 99 (19), 191110, 2011 | 41 | 2011 |
| Impact of scaling base thickness on the performance of heterojunction phototransistors A Dehzangi, A Haddadi, S Adhikary, M Razeghi Nanotechnology 28 (10), 10LT01, 2017 | 36 | 2017 |
| Evidence of quantum dot size uniformity in strain-coupled multilayered In (Ga) As/GaAs QDs grown with constant overgrowth percentage D Panda, A Ahmad, H Ghadi, S Adhikary, B Tongbram, S Chakrabarti Journal of Luminescence 192, 562-566, 2017 | 26 | 2017 |
| The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers S Shetty, S Adhikary, B Tongbram, A Ahmad, H Ghadi, S Chakrabarti Journal of Luminescence 158, 231-235, 2015 | 26 | 2015 |
| Thermal stability of the peak emission wavelength in multilayer inas/gaas qds capped with a combination capping of InAlGaAs and GaAs S Adhikary, N Halder, S Chakrabarti Journal of nanoscience and nanotechnology 11 (5), 4067-4072, 2011 | 25 | 2011 |
| One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layers H Ghadi, A Agarwal, S Adhikary, J Agawane, A Mandal, S Chakrabarti, ... Thin Solid Films 566, 1-4, 2014 | 21 | 2014 |
| Spectral broadening due to post-growth annealing of a long-wave InGaAs/GaAs quantum dot infrared photodetector with a quaternary barrier layer S Adhikary, S Chakrabarti Thin Solid Films 552, 146-149, 2014 | 21 | 2014 |
| Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors B Tongbram, S Shetty, H Ghadi, S Adhikary, S Chakrabarti Applied Physics A 118 (2), 511-517, 2015 | 18 | 2015 |
| InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection M Razeghi, A Haddadi, AM Hoang, R Chevallier, S Adhikary, A Dehzangi SPIE Defense+ Security, 981909-981909-8, 2016 | 17 | 2016 |
| Large‐Scale Transparent Molybdenum Disulfide Plasmonic Photodetector Using Split Bull Eye Structure A Sourav, Z Li, Z Huang, VD Botcha, C Hu, JP Ao, Y Peng, HC Kuo, J Wu, ... Advanced Optical Materials 6 (20), 1800461, 2018 | 16 | 2018 |
