| Avalanche photodiodes and quenching circuits for single-photon detection S Cova, M Ghioni, A Lacaita, C Samori, F Zappa Applied optics 35 (12), 1956-1976, 1996 | 1528 | 1996 |
| Electronic switching in phase-change memories A Pirovano, AL Lacaita, A Benvenuti, F Pellizzer, R Bez IEEE Transactions on Electron Devices 51 (3), 452-459, 2004 | 757 | 2004 |
| Novel/spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications F Pellizzer, A Pirovano, F Ottogalli, M Magistretti, M Scaravaggi, P Zuliani, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 18-19, 2004 | 543 | 2004 |
| Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices U Russo, D Ielmini, C Cagli, AL Lacaita IEEE Transactions on Electron Devices 56 (2), 193-200, 2009 | 518 | 2009 |
| Reliability study of phase-change nonvolatile memories A Pirovano, A Redaelli, F Pellizzer, F Ottogalli, M Tosi, D Ielmini, ... IEEE Transactions on Device and Materials Reliability 4 (3), 422-427, 2004 | 504 | 2004 |
| Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials A Pirovano, AL Lacaita, F Pellizzer, SA Kostylev, A Benvenuti, R Bez IEEE Transactions on Electron Devices 51 (5), 714-719, 2004 | 445 | 2004 |
| On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices AL Lacaita, F Zappa, S Bigliardi, M Manfredi IEEE Transactions on electron devices 40 (3), 577-582, 1993 | 430 | 1993 |
| Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices U Russo, D Ielmini, C Cagli, AL Lacaita IEEE Transactions on Electron Devices 56 (2), 186-192, 2009 | 428 | 2009 |
| Phase change memories: State-of-the-art, challenges and perspectives AL Lacaita Solid-State Electronics 50 (1), 24-31, 2006 | 410 | 2006 |
| Frequency dependence on bias current in 5 GHz CMOS VCOs: Impact on tuning range and flicker noise upconversion S Levantino, C Samori, A Bonfanti, SLJ Gierkink, AL Lacaita, V Boccuzzi IEEE Journal of Solid-State Circuits 37 (8), 1003-1011, 2002 | 382 | 2002 |
| Study of multilevel programming in programmable metallization cell (PMC) memory U Russo, D Kamalanathan, D Ielmini, AL Lacaita, MN Kozicki IEEE transactions on electron devices 56 (5), 1040-1047, 2009 | 376 | 2009 |
| Electronic switching effect and phase-change transition in chalcogenide materials A Redaelli, A Pirovano, F Pellizzer, AL Lacaita, D Ielmini, R Bez IEEE Electron Device Letters 25 (10), 684-686, 2004 | 362 | 2004 |
| Scaling analysis of phase-change memory technology A Pirovano, AL Lacaita, A Benvenuti, F Pellizzer, S Hudgens, R Bez IEEE International Electron Devices Meeting 2003, 29.6. 1-29.6. 4, 2003 | 350 | 2003 |
| Electrothermal and phase-change dynamics in chalcogenide-based memories AL Lacaita, A Redaelli, D Ielmini, F Pellizzer, A Pirovano, A Benvenuti, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 334 | 2004 |
| Recovery and drift dynamics of resistance and threshold voltages in phase-change memories D Ielmini, AL Lacaita, D Mantegazza IEEE Transactions on Electron Devices 54 (2), 308-315, 2007 | 326 | 2007 |
| A 13.5-mW 5-GHz frequency synthesizer with dynamic-logic frequency divider S Pellerano, S Levantino, C Samori, AL Lacaita IEEE Journal of Solid-State Circuits 39 (2), 378-383, 2004 | 324 | 2004 |
| Trapping phenomena in avalanche photodiodes on nanosecond scale S Cova, A Lacaita, G Ripamonti IEEE Electron device letters 12 (12), 685-687, 1991 | 311 | 1991 |
| A 2.9–4.0-GHz Fractional-N Digital PLL With Bang-Bang Phase Detector and 560-Integrated Jitter at 4.5-mW Power D Tasca, M Zanuso, G Marzin, S Levantino, C Samori, AL Lacaita IEEE Journal of Solid-State Circuits 46 (12), 2745-2758, 2011 | 293 | 2011 |
| Threshold switching and phase transition numerical models for phase change memory simulations A Redaelli, A Pirovano, A Benvenuti, AL Lacaita Journal of Applied Physics 103 (11), 2008 | 268 | 2008 |
| Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM U Russo, D Ielmini, C Cagli, AL Lacaita, S Spiga, C Wiemer, M Perego, ... 2007 IEEE International Electron Devices Meeting, 775-778, 2007 | 259 | 2007 |
Daniele IelminiProfessor of Electronics在 elet.polimi.it 的电子邮件经过验证
