| NCFET-based 6-T SRAM: Yield estimation based on variation-aware sensitivity Y Hong, Y Choi, C Shin IEEE Journal of the Electron Devices Society 8, 182-188, 2020 | 18 | 2020 |
| Device design guideline for junctionless gate-all-around nanowire negative-capacitance FET with HfO2-based ferroelectric gate stack Y Choi, Y Hong, C Shin Semiconductor Science and Technology 35 (1), 015011, 2019 | 17 | 2019 |
| Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO2 Ferroelectric Capacitor Y Choi, C Han, J Shin, M Seungjun, M Jinhong, P Hyeonjung, E Deokjoon, ... Sensors 22 (11), 2022 | 14 | 2022 |
| Optimization of double metal-gate InAs/Si heterojunction nanowire TFET Y Choi, Y Hong, E Ko, C Shin Semiconductor Science and Technology 35 (7), 075024, 2020 | 14 | 2020 |
| Improved remnant polarization of Zr-doped HfO2 ferroelectric film by CF4/O2 plasma passivation Y Choi, H Park, C Han, J Min, C Shin Scientific Reports 12 (1), 16750, 2022 | 8 | 2022 |
| Design of JL-CFET (junctionless complementary field effect transistor)-based inverter for low power applications S Lee, Y Choi, SM Won, D Son, HW Baac, C Shin Semiconductor Science and Technology 37 (3), 035019, 2022 | 6 | 2022 |
| Abruptly-switching MoS₂-channel atomic-threshold-switching field-effect transistor with AgTi/HfO₂-based threshold switching device S Jeong, S Han, HJ Lee, D Eom, G Youm, Y Choi, S Moon, K Ahn, J Oh, ... IEEE Access 9, 116953-116961, 2021 | 6 | 2021 |
| Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate Y Choi, J Shin, S Moon, C Shin Micromachines 11 (5), 525, 2020 | 6 | 2020 |
| Experimental study of endurance characteristics of Al-doped HfO2 ferroelectric capacitor Y Choi, J Shin, S Moon, J Min, C Han, C Shin Nanotechnology 34 (18), 185203, 2023 | 2 | 2023 |
| Impact of Process-Induced Variations on Negative Capacitance Junctionless Nanowire FET Y Choi, J Lee, J Lim, S Moon, C Shin Electronics 10 (16), 1899, 2021 | 2 | 2021 |
| Grain-size adjustment in Hf0. 5Zr0. 5O2 ferroelectric film to improve the switching time in Hf0. 5Zr0. 5O2-based ferroelectric capacitor J Yoon, Y Choi, C Shin Nanotechnology, 2023 | 1 | 2023 |
| Impact of CF4/O2 Plasma Passivation on Endurance Performance of Zr-Doped HfO2 Ferroelectric Film Y Choi, H Park, C Han, C Shin IEEE Electron Device Letters 44 (5), 713-716, 2023 | 1 | 2023 |
| First integration of Ni barrier layer for enhanced threshold switching characteristics in Ag/HfO2-based TS device D Chu, S Kang, G Kim, J Sung, J Lim, Y Choi, D Han, C Shin Materials Today Advances 22, 100492, 2024 | | 2024 |
| Impact of the Crystal Structure of Interlayer on the Properties of Zr‐Doped Hafnia‐Based Ferroelectric Capacitor I Park, Y Choi, C Shin physica status solidi (a) 221 (9), 2300778, 2024 | | 2024 |
| Self‐Healing Magnetic Field‐Assisted Threshold Switching Device Utilizing Dual Field‐Driven Filamentary Physics D Chu, D Han, S Kang, G Kim, Y Choi, E Jang, C Shin Advanced Electronic Materials, 2400140, 2024 | | 2024 |
| Impact of Various Pulse-Bases on Charge Boost in Ferroelectric Capacitors G Kim, J Lim, D Eom, Y Choi, H Kim, C Shin IEEE Electron Device Letters 43 (11), 1953-1956, 2022 | | 2022 |
Changhwan ShinProfessor at Korea University在 korea.ac.kr 的电子邮件经过验证
