| All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001) J Kwoen, B Jang, J Lee, T Kageyama, K Watanabe, Y Arakawa Optics express 26 (9), 11568-11576, 2018 | 129 | 2018 |
| Thermal annealing of GaInNAs/GaAs quantum wells grown by chemical beam epitaxy and its effect on photoluminescence T Kageyama, T Miyamoto, S Makino, F Koyama, K Iga Japanese journal of applied physics 38 (3B), L298, 1999 | 120 | 1999 |
| Extremely high temperature (220 C) continuous-wave operation of 1300-nm-range quantum-dot lasers T Kageyama, K Nishi, M Yamaguchi, R Mochida, Y Maeda, K Takemasa, ... The European Conference on Lasers and Electro-Optics, PDA_1, 2011 | 92 | 2011 |
| GaInNAs/GaAs quantum dots grown by chemical beam epitaxy S Makino, T Miyamoto, T Kageyama, N Nishiyama, F Koyama, K Iga Journal of crystal growth 221 (1-4), 561-565, 2000 | 66 | 2000 |
| High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy T Kageyama, T Miyamoto, S Makino, N Nishiyama, F Koyama, K Iga IEEE Photonics Technology Letters 12 (1), 10-12, 2000 | 66 | 2000 |
| Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property T Miyamoto, K Takeuchi, T Kageyama, F Koyama, K Iga Journal of crystal growth 197 (1-2), 67-72, 1999 | 62 | 1999 |
| CBE and MOCVD growth of GaInNAs T Miyamoto, T Kageyama, S Makino, D Schlenker, F Koyama, K Iga Journal of crystal growth 209 (2-3), 339-344, 2000 | 61 | 2000 |
| Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy T Kageyama, T Miyamoto, S Makino, F Koyama, K Iga Journal of crystal growth 209 (2-3), 350-354, 2000 | 57 | 2000 |
| Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy T Kageyama, T Miyamoto, M Ohta, T Matsuura, Y Matsui, T Furuhata, ... Journal of applied physics 96 (1), 44-48, 2004 | 51 | 2004 |
| Long wavelength-tunable VCSELs with optimized MEMS bridge tuning structure D Sun, W Fan, P Kner, J Boucart, T Kageyama, D Zhang, R Pathak, ... IEEE photonics technology letters 16 (3), 714-716, 2004 | 46 | 2004 |
| Surfactant effect of Sb on GaInAs quantum dots grown by molecular beam epitaxy T Matsuura, T Miyamoto, T Kageyama, M Ohta, Y Matsui, T Furuhata, ... Japanese journal of applied physics 43 (5A), L605, 2004 | 45 | 2004 |
| Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1 mW T Kageyama, T Miyamoto, S Makino, Y Ikenaga, N Nishiyama, ... Electronics Letters 37 (4), 225-226, 2001 | 44 | 2001 |
| GaInNAs/GaAs quantum well growth by chemical beam epitaxy T Miyamoto, K Takeuchi, T Kageyama, F Koyama, K Iga Japanese journal of applied physics 37 (1R), 90, 1998 | 43 | 1998 |
| Molecular beam epitaxial growths of high-optical-gain InAs quantum dots on GaAs for long-wavelength emission K Nishi, T Kageyama, M Yamaguchi, Y Maeda, K Takemasa, T Yamamoto, ... Journal of Crystal Growth 378, 459-462, 2013 | 41 | 2013 |
| A recorded 62% PCE and low series and thermal resistance VCSEL with a double intra-cavity structure K Takaki 21st ISLC, Sept. 2008, 1-2, 2008 | 40 | 2008 |
| Sub-mA threshold 1.5-μm VCSELs with epitaxial and dielectric DBR mirrors D Sun, W Fan, P Kner, J Boucart, T Kageyama, R Pathak, D Zhang, ... IEEE Photonics Technology Letters 15 (12), 1677-1679, 2003 | 28 | 2003 |
| Chemical beam epitaxy growth and characterization of GaNAs/GaAs K Takeuchi, T Miyamoto, T Kageyama, F Koyama, K Iga Japanese journal of applied physics 37 (3S), 1603, 1998 | 26 | 1998 |
| Surface emitting laser element array M Ariga, T Kageyama, N Iwai, K Nishikata US Patent 7,974,327, 2011 | 21 | 2011 |
| Elongation of emission wavelength of GaInAsSb-covered (Ga) InAs quantum dots grown by molecular beam epitaxy T Matsuura, T Miyamoto, T Kageyama, M Ohta, Y Matsui, T Furuhata, ... Japanese journal of applied physics 43 (1A), L82, 2003 | 21 | 2003 |
| A long-wavelength MEMS tunable VCSEL incorporating a tunnel junction P Kner, T Kageyama, J Boucart, R Stone, D Sun, RF Nabiev, R Pathak, ... IEEE photonics technology letters 15 (9), 1183-1185, 2003 | 21 | 2003 |
Fumio KoyamaTokyo Institute of Technology在 pi.titech.ac.jp 的电子邮件经过验证
