| Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor WC Liu, HJ Pan, HI Chen, KW Lin, SY Cheng, KH Yu IEEE Transactions on Electron Devices 48 (9), 1938-1944, 2001 | 84 | 2001 |
| Study of a WO3 thin film based hydrogen gas sensor decorated with platinum nanoparticles CH Chang, TC Chou, WC Chen, JS Niu, KW Lin, SY Cheng, JH Tsai, ... Sensors and Actuators B: Chemical 317, 128145, 2020 | 72 | 2020 |
| Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT) KH Yu, HM Chuang, KW Lin, SY Cheng, CC Cheng, JY Chen, WC Liu IEEE Transactions on Electron Devices 49 (10), 1687-1693, 2002 | 58 | 2002 |
| A new Pt/oxide/In/sub 0.49/Ga/sub 0.51/P MOS Schottky diode hydrogen sensor WC Liu, KW Lin, HI Chen, CK Wang, CC Cheng, SY Cheng, CT Lu IEEE Electron Device Letters 23 (11), 640-642, 2002 | 46 | 2002 |
| High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET) W ChauLiu Electronics Letters 33 (1), 98-99, 1997 | 42 | 1997 |
| Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT PH Lai, CW Chen, CI Kao, SI Fu, YY Tsai, CW Hung, CH Yen, ... IEEE transactions on electron devices 53 (1), 1-8, 2005 | 40 | 2005 |
| A novel InGaP/GaAs s-shaped negative-differential-resistance (NDR) switch for multiple-valued logic applications WC Liu, JH Tsai, WS Lour, LW Laih, SY Cheng, KB Thei, CZ Wu IEEE Transactions on Electron Devices 44 (4), 520-525, 1997 | 40 | 1997 |
| Heterojunction bipolar transistor with zero conduction band discontinuity WC Liu, SY Cheng US Patent 6,791,126, 2004 | 36 | 2004 |
| A hydrogen sensitive Pd/GaAs Schottky diode sensor SY Cheng Materials chemistry and physics 78 (2), 525-528, 2003 | 32 | 2003 |
| A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor KW Lin, CC Cheng, SY Cheng, KH Yu, CK Wang, HM Chuang, JY Chen, ... Semiconductor science and technology 16 (12), 997, 2001 | 30 | 2001 |
| Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET) HM Chuang, SY Cheng, CY Chen, XD Liao, RC Liu, WC Liu IEEE Transactions on Electron Devices 50 (8), 1717-1723, 2003 | 27 | 2003 |
| Comprehensive study of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure SY Cheng Semiconductor science and technology 17 (7), 701, 2002 | 24 | 2002 |
| Wide voltage operation regime double heterojunction bipolar transistor WC Liu, SY Cheng US Patent 6,031,256, 2000 | 24 | 2000 |
| A Highly Sensitive Ammonia (NH3) Sensor Based on a Tungsten Trioxide (WO3) Thin Film Decorated With Evaporated Platinum (Pt) Nanoparticles CH Chang, TC Chou, WC Chen, JS Niu, KW Lin, SY Cheng, WC Liu IEEE Transactions on Electron Devices 67 (3), 1176-1182, 2020 | 22 | 2020 |
| Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs CY Chen, SI Fu, SY Cheng, CY Chang, CH Tsai, CH Yen, SF Tsai, RC Liu, ... IEEE transactions on electron devices 51 (12), 1963-1971, 2004 | 22 | 2004 |
| Temperature-dependence investigation of a high-performance inverted delta-doped V-shaped GaInP/In/sub x/Ga/sub 1-x/As/GaAs pseudomorphic high electron mobility transistor WC Liu, WL Chang, WS Lour, KH Yu, KW Lin, CC Cheng, SY Cheng IEEE Transactions on Electron Devices 48 (7), 1290-1296, 2001 | 21 | 2001 |
| Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMT WC Liu, WL Chang, WS Lour, SY Cheng, YH Shie, JY Chen, WC Wang, ... IEEE Electron Device Letters 20 (6), 274-276, 1999 | 21 | 1999 |
| Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications WC Liu, WC Wang, HJ Pan, JY Chen, SY Cheng, KW Lin, KH Yu, KB Thei, ... IEEE Transactions on Electron Devices 47 (8), 1553-1559, 2000 | 19 | 2000 |
| Study of a palladium (Pd)/aluminum-doped zinc oxide (AZO) hydrogen sensor and the Kalman algorithm for Internet-of-Things (IoT) application WC Chen, JS Niu, IP Liu, CY Chi, SY Cheng, KW Lin, WC Liu IEEE Transactions on Electron Devices 67 (10), 4405-4412, 2020 | 18 | 2020 |
| Hydrogen sensing properties of a novel GaN/AlGaN Schottky diode decorated with palladium nanoparticles and a platinum thin film WC Chen, JS Niu, IP Liu, HY Chen, SY Cheng, KW Lin, WC Liu Sensors and Actuators B: Chemical 330, 129339, 2021 | 17 | 2021 |
