| New binary sequences with zero-correlation duration for approximately synchronised CDMA JS Cha, S Kameda, M Yokoyama, H Nakase, K Masu, K Tsubouchi Electronics Letters 36 (11), 1, 2000 | 104 | 2000 |
| Design of sub-1g microelectromechanical systems accelerometers D Yamane, T Konishi, T Matsushima, K Machida, H Toshiyoshi, K Masu Applied Physics Letters 104 (7), 2014 | 102 | 2014 |
| Complete planarization of via holes with aluminum by selective and nonselective chemical vapor deposition K Tsubouchi, K Masu, N Shigeeda, T Matano, Y Hiura, N Mikoshiba Applied physics letters 57 (12), 1221-1223, 1990 | 92 | 1990 |
| A simple through-only de-embedding method for on-wafer S-parameter measurements up to 110 GHz H Ito, K Masuy 2008 IEEE MTT-S International Microwave Symposium Digest, 383-386, 2008 | 87 | 2008 |
| A bidirectional-and multi-drop-transmission-line interconnect for multipoint-to-multipoint on-chip communications H Ito, M Kimura, K Miyashita, T Ishii, K Okada, K Masu IEEE Journal of Solid-State Circuits 43 (4), 1020-1029, 2008 | 82 | 2008 |
| Selective aluminum chemical vapor deposition K Tsubouchi, K Masu Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10 (4 …, 1992 | 79 | 1992 |
| Process for thin film formation K Tsubouchi, K Masu US Patent 5,604,153, 1997 | 67 | 1997 |
| Acceptor energy level for Zn in Ga1− xAlxAs K Masu, M Konagai, K Takahashi Journal of Applied Physics 51 (2), 1060-1064, 1980 | 56 | 1980 |
| Process for forming deposited film N Mikoshiba, T Ohmi, K Tsubouchi, K Masu, N Suzuki US Patent 5,753,320, 1998 | 54 | 1998 |
| Pyrolysis and photolysis of trimethylaluminum N Suzuki, C Anayama, K Masu, K Tsubouchi, N Mikoshiba Japanese journal of applied physics 25 (8R), 1236, 1986 | 53 | 1986 |
| On-chip variable inductor using microelectromechanical systems technology Y Yokoyama, T Fukushige, S Hata, K Masu, A Shimokohbe Japanese Journal of Applied Physics 42 (4S), 2190, 2003 | 52 | 2003 |
| Transmission electron microscopic observation of AlN/α-Al2O3 heteroepitaxial interface with initial-nitriding AlN layer K Masu, Y Nakamura, T Yamazaki, T Shibata, M Takahashi, ... Japanese journal of applied physics 34 (6B), L760, 1995 | 51 | 1995 |
| On-Chip High-Variable Inductor Using Wafer-Level Chip-Scale Package Technology K Okada, H Sugawara, H Ito, K Itoi, M Sato, H Abe, T Ito, K Masu IEEE Transactions on Electron Devices 53 (9), 2401-2406, 2006 | 50 | 2006 |
| On-chip transmission line for long global interconnects H Ito, J Inoue, S Gomi, H Sugita, K Okada, K Masu IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 49 | 2004 |
| Process for forming deposited film by use of alkyl aluminum hydride N Mikoshiba, K Tsubouchi, K Masu US Patent 5,179,042, 1993 | 49* | 1993 |
| Apparatus for vaporizing liquid raw material and apparatus for forming thin film K Tsubouchi, K Masu US Patent 5,421,895, 1995 | 45 | 1995 |
| Area-selective CVD of metals K Tsubouchi, K Masu Thin Solid Films 228 (1-2), 312-318, 1993 | 43 | 1993 |
| Full duplex transmission operation of a 2.45-GHz asynchronous spread spectrum using a SAN convolver K Tsubouchi, H Nakase, A Namba, K Masu IEEE transactions on ultrasonics, ferroelectrics, and frequency control 40 …, 1993 | 42 | 1993 |
| Wide-range RF variable inductor on Si CMOS chip with MEMS actuator H Sugawara, Y Yoshihara, H Ito, K Okada, K Masu 34th European Microwave Conference, 2004. 2, 701-704, 2004 | 40 | 2004 |
| Selective deposition of aluminum from selectively excited metalorganic source by the rf plasma K Masu, K Tsubouchi, N Shigeeda, T Matano, N Mikoshiba Applied physics letters 56 (16), 1543-1545, 1990 | 39 | 1990 |
