| Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs M Sopanen, HP Xin, CW Tu Applied Physics Letters 76 (8), 994-996, 2000 | 225 | 2000 |
| A single-pixel wireless contact lens display AR Lingley, M Ali, Y Liao, R Mirjalili, M Klonner, M Sopanen, S Suihkonen, ... Journal of Micromechanics and Microengineering 21 (12), 125014, 2011 | 215 | 2011 |
| Luminescence from excited states in strain-induced As quantum dots H Lipsanen, M Sopanen, J Ahopelto Physical Review B 51 (19), 13868, 1995 | 194 | 1995 |
| Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects S Grosse, JHH Sandmann, G Von Plessen, J Feldmann, H Lipsanen, ... Physical Review B 55 (7), 4473, 1997 | 158 | 1997 |
| Zeeman effect in parabolic quantum dots R Rinaldi, PV Giugno, R Cingolani, H Lipsanen, M Sopanen, J Tulkki, ... Physical review letters 77 (2), 342, 1996 | 145 | 1996 |
| Strain‐induced quantum dots by self‐organized stressors M Sopanen, H Lipsanen, J Ahopelto Applied physics letters 66 (18), 2364-2366, 1995 | 126 | 1995 |
| High quality GaAs nanowires grown on glass substrates V Dhaka, T Haggren, H Jussila, H Jiang, E Kauppinen, T Huhtio, ... Nano letters 12 (4), 1912-1918, 2012 | 114 | 2012 |
| Self‐organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy M Sopanen, H Lipsanen, J Ahopelto Applied physics letters 67 (25), 3768-3770, 1995 | 112 | 1995 |
| Observation of defect complexes containing Ga vacancies in GaAsN J Toivonen, T Hakkarainen, M Sopanen, H Lipsanen, J Oila, K Saarinen Applied Physics Letters 82 (1), 40-42, 2003 | 103 | 2003 |
| Temperature dependence of carrier relaxation in strain-induced quantum dots M Brasken, M Lindberg, M Sopanen, H Lipsanen, J Tulkki Physical Review B 58 (24), R15993, 1998 | 96 | 1998 |
| Photocatalytic degradation of dyes by CdS microspheres under near UV and blue LED radiation E Repo, S Rengaraj, S Pulkka, E Castangnoli, S Suihkonen, M Sopanen, ... Separation and Purification Technology 120, 206-214, 2013 | 91 | 2013 |
| High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy J Toivonen, T Hakkarainen, M Sopanen, H Lipsanen Journal of crystal growth 221 (1-4), 456-460, 2000 | 77 | 2000 |
| Optical properties of quantum dots induced by self-assembled stressors, in Optics of Quantum Dots and Wires J Tulkki, H Lipsanen, M Sopanen Artec House, 2004 | 71 | 2004 |
| Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy M Taskinen, M Sopanen, H Lipsanen, J Tulkki, T Tuomi, J Ahopelto Surface science 376 (1-3), 60-68, 1997 | 70 | 1997 |
| Low energy electron beam induced vacancy activation in GaN H Nykänen, S Suihkonen, L Kilanski, M Sopanen, F Tuomisto Applied Physics Letters 100 (12), 2012 | 66 | 2012 |
| GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride M Bosund, P Mattila, A Aierken, T Hakkarainen, H Koskenvaara, ... Applied Surface Science 256 (24), 7434-7437, 2010 | 61 | 2010 |
| Luminescence from excited states in straininduced In, Ga H Lipsanen, M Sopanen, J Ahopelto As quantum dots. Phys. Rev. B 51 (13), 868, 1995 | 58 | 1995 |
| Selective growth of InGaAs on nanoscale InP islands J Ahopelto, H Lipsanen, M Sopanen, T Koljonen, HEM Niemi Applied physics letters 65 (13), 1662-1664, 1994 | 57 | 1994 |
| Atomic layer etching of gallium nitride (0001) C Kauppinen, SA Khan, J Sundqvist, DB Suyatin, S Suihkonen, ... Journal of Vacuum Science & Technology A 35 (6), 2017 | 53 | 2017 |
| Grass-like alumina with low refractive index for scalable, broadband, omnidirectional antireflection coatings on glass using atomic layer deposition C Kauppinen, K Isakov, M Sopanen ACS Applied Materials & Interfaces 9 (17), 15038-15043, 2017 | 49 | 2017 |
