Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S B Groven, M Heyne, A Nalin Mehta, H Bender, T Nuytten, J Meersschaut, ... Chemistry of Materials 29 (7), 2927-2938, 2017 | 96 | 2017 |
Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current Q Smets, G Arutchelvan, J Jussot, D Verreck, I Asselberghs, AN Mehta, ... 2019 IEEE International Electron Devices Meeting (IEDM), 23.2. 1-23.2. 4, 2019 | 91 | 2019 |
Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism B Groven, A Nalin Mehta, H Bender, J Meersschaut, T Nuytten, ... Chemistry of Materials 30 (21), 7648-7663, 2018 | 71 | 2018 |
Formation mechanism of 2D SnS 2 and SnS by chemical vapor deposition using SnCl 4 and H 2 S H Zhang, Y Balaji, AN Mehta, M Heyns, M Caymax, I Radu, ... Journal of Materials Chemistry C 6 (23), 6172-6178, 2018 | 70 | 2018 |
Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity D Chiappe, J Ludwig, A Leonhardt, S El Kazzi, AN Mehta, T Nuytten, ... Nanotechnology 29 (42), 425602, 2018 | 65 | 2018 |
Engineering wafer-scale epitaxial two-dimensional materials through sapphire template screening for advanced high-performance nanoelectronics Y Shi, B Groven, J Serron, X Wu, A Nalin Mehta, A Minj, S Sergeant, ... ACS nano 15 (6), 9482-9494, 2021 | 43 | 2021 |
Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers D Marinov, JF de Marneffe, Q Smets, G Arutchelvan, KM Bal, E Voronina, ... npj 2D Materials and Applications 5 (1), 17, 2021 | 39 | 2021 |
Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates B Groven, AN Mehta, H Bender, Q Smets, J Meersschaut, A Franquet, ... Journal of Vacuum Science & Technology A 36 (1), 2018 | 36 | 2018 |
Nucleation and growth mechanism of 2D SnS2 by chemical vapor deposition: Initial 3D growth followed by 2D lateral growth H Zhang, T van Pelt, AN Mehta, H Bender, I Radu, M Caymax, ... 2D Materials 5 (3), 035006, 2018 | 31 | 2018 |
On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides W Mortelmans, A Nalin Mehta, Y Balaji, S Sergeant, R Meng, M Houssa, ... ACS Applied Materials & Interfaces, 2020 | 26 | 2020 |
Peculiar alignment and strain of 2D WSe2 grown by van der Waals epitaxy on reconstructed sapphire surfaces W Mortelmans, S El Kazzi, AN Mehta, D Vanhaeren, T Conard, ... Nanotechnology 30 (46), 465601, 2019 | 23 | 2019 |
Effects of buried grain boundaries in multilayer MoS2 J Ludwig, AN Mehta, M Mascaro, U Celano, D Chiappe, H Bender, ... Nanotechnology 30 (28), 285705, 2019 | 23 | 2019 |
Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice A Nalin Mehta, J Mo, G Pourtois, A Dabral, B Groven, H Bender, P Favia, ... The Journal of Physical Chemistry C, 2020 | 22 | 2020 |
Sources of variability in scaled MoS2 FETs Q Smets, D Verreck, Y Shi, G Arutchelvan, B Groven, X Wu, S Sutar, ... 2020 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2020 | 19 | 2020 |
Unravelling stacking order in epitaxial bilayer MX2 using 4D-STEM with unsupervised learning A Nalin Mehta, N Gauquelin, M Nord, A Orekhov, H Bender, D Cerbu, ... Nanotechnology 31 (44), 445702, 2020 | 19 | 2020 |
Importance of the substrate’s surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides J Mo, S El Kazzi, W Mortelmans, AN Mehta, S Sergeant, Q Smets, ... Nanotechnology 31 (12), 125604, 2020 | 18 | 2020 |
Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature B Groven, D Claes, A Nalin Mehta, H Bender, W Vandervorst, M Heyns, ... The Journal of chemical physics 150 (10), 2019 | 17 | 2019 |
Understanding noninvasive charge transfer doping of graphene: a comparative study AN Mehta, W Mu, M Murugesan, Y Jiao, Y Fu, P Hyldgaard, J Liu Journal of Materials Science: Materials in Electronics 29, 5239-5252, 2018 | 17 | 2018 |
Structural characterization of SnS crystals formed by chemical vapour deposition A Nalin Mehta, H Zhang, A Dabral, O Richard, P Favia, H Bender, ... Journal of Microscopy 268 (3), 276-287, 2017 | 17 | 2017 |
Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2 W Mortelmans, AN Mehta, Y Balaji, S El Kazzi, S Sergeant, M Houssa, ... 2D Materials 7 (2), 025027, 2020 | 16 | 2020 |