关注
Shiro Tsukamoto
Shiro Tsukamoto
在 unimib.it 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor deposition
S Tsukamoto, Y Nagamune, M Nishioka, Y Arakawa
Journal of applied physics 71 (1), 533-535, 1992
2341992
Photoluminescence spectra and anisotropic energy shift of GaAs quantum wires in high magnetic fields
Y Nagamune, Y Arakawa, S Tsukamoto, M Nishioka, S Sasaki, N Miura
Physical review letters 69 (20), 2963, 1992
1751992
New Structure Model for the Surface
A Ohtake, J Nakamura, S Tsukamoto, N Koguchi, A Natori
Physical review letters 89 (20), 206102, 2002
1372002
Fabrication of InGaAs quantum dots on GaAs (0 0 1) by droplet epitaxy
T Mano, K Watanabe, S Tsukamoto, H Fujioka, M Oshima, N Koguchi
Journal of Crystal Growth 209 (2-3), 504-508, 2000
972000
New self-organized growth method for InGaAs quantum dots on GaAs (001) using droplet epitaxy
T Mano, K Watanabe, S Tsukamoto, H Fujioka, M Oshima, N Koguchi
Japanese journal of applied physics 38 (9A), L1009, 1999
911999
Fabrication of GaAs quantum wires (∼ 10 nm) by metalorganic chemical vapor selective deposition growth
S Tsukamoto, Y Nagamune, M Nishioka, Y Arakawa
Applied physics letters 63 (3), 355-357, 1993
901993
GaAs quantum dots with lateral dimension of 25 nm fabricated by selective metalorganic chemical vapor deposition growth
Y Nagamune, M Nishioka, S Tsukamoto, Y Arakawa
Applied physics letters 64 (19), 2495-2497, 1994
831994
Nanoscale InGaAs concave disks fabricated by heterogeneous droplet epitaxy
T Mano, K Watanabe, S Tsukamoto, N Koguchi, H Fujioka, M Oshima, ...
Applied Physics Letters 76 (24), 3543-3545, 2000
822000
Narrow photoluminescence linewidth from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor …
T Yang, J Tatebayashi, S Tsukamoto, M Nishioka, Y Arakawa
Applied physics letters 84 (15), 2817-2819, 2004
812004
Fabrication of GaAs arrowhead‐shaped quantum wires by metalorganic chemical vapor deposition selective growth
S Tsukamoto, Y Nagamune, M Nishioka, Y Arakawa
Applied physics letters 62 (1), 49-51, 1993
781993
Conductance of single thiolated poly (GC)-poly (GC) DNA molecules
MS Xu, S Tsukamoto, S Ishida, M Kitamura, Y Arakawa, RG Endres, ...
Applied Physics Letters 87 (8), 2005
742005
Atomistic insights for InAs quantum dot formation on GaAs (001) using STM within a MBE growth chamber
S Tsukamoto, T Honma, GR Bell, A Ishii, Y Arakawa
Small 2 (3), 386-389, 2006
682006
Photoluminescence studies of GaAs quantum dots grown by droplet epitaxy
K Watanabe, S Tsukamoto, Y Gotoh, N Koguchi
Journal of crystal growth 227, 1073-1077, 2001
672001
Molecular‐beam epitaxial growth of high‐quality InSb on InP and GaAs substrates
JE Oh, PK Bhattacharya, YC Chen, S Tsukamoto
Journal of Applied Physics 66 (8), 3618-3621, 1989
661989
High density InAs∕ GaAs quantum dots with enhanced photoluminescence intensity using antimony surfactant-mediated metal organic chemical vapor deposition
D Guimard, M Nishioka, S Tsukamoto, Y Arakawa
Applied physics letters 89 (18), 2006
632006
Growth process and mechanism of nanometer-scale GaAs dot-structures using MOCVD selective growth
Y Nagamune, S Tsukamoto, M Nishioka, Y Arakawa
Journal of crystal growth 126 (4), 707-717, 1993
621993
Atomic-level in situ real-space observation of Ga adatoms on GaAs (0 0 1)(2× 4)-As surface during molecular beam epitaxy growth
S Tsukamoto, N Koguchi
Journal of crystal growth 201, 118-123, 1999
531999
Observation of sulfur‐terminated GaAs (001)‐(2× 6) reconstruction by scanning tunneling microscopy
S Tsukamoto, N Koguchi
Applied physics letters 65 (17), 2199-2201, 1994
491994
1.55 μm emission from InAs∕ GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation
D Guimard, S Tsukamoto, M Nishioka, Y Arakawa
Applied physics letters 89 (8), 2006
482006
Conformation and local environment dependent conductance of DNA molecules
MS Xu, RG Endres, S Tsukamoto, M Kitamura, S Ishida, Y Arakawa
Small 1 (12), 1168-1172, 2005
452005
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