| Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates JS Moon, D Curtis, M Hu, D Wong, C McGuire, PM Campbell, G Jernigan, ... IEEE Electron Device Letters 30 (6), 650-652, 2009 | 499 | 2009 |
| Hall effect mobility of epitaxial graphene grown on silicon carbide JL Tedesco, BL VanMil, RL Myers-Ward, JM McCrate, SA Kitt, ... Applied Physics Letters 95 (12), 2009 | 246 | 2009 |
| Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale JA Robinson, M Wetherington, JL Tedesco, PM Campbell, X Weng, J Stitt, ... Nano letters 9 (8), 2873-2876, 2009 | 246 | 2009 |
| Top-gated epitaxial graphene FETs on Si-face SiC wafers with a peak transconductance of 600 mS/mm JS Moon, D Curtis, S Bui, M Hu, DK Gaskill, JL Tedesco, P Asbeck, ... IEEE Electron Device Letters 31 (4), 260-262, 2010 | 192 | 2010 |
| Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production GG Jernigan, BL VanMil, JL Tedesco, JG Tischler, ER Glaser, ... Nano letters 9 (7), 2605-2609, 2009 | 186 | 2009 |
| Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions RE Stahlbush, BL VanMil, RL Myers-Ward, KK Lew, DK Gaskill, CR Eddy Applied Physics Letters 94 (4), 2009 | 114 | 2009 |
| Turning of basal plane dislocations during epitaxial growth on 4 off-axis 4H-SiC RL Myers-Ward, BL VanMil, RE Stahlbush, SL Katz, JM McCrate, SA Kitt, ... Materials Science Forum 615, 105-108, 2009 | 79 | 2009 |
| Recombination processes controlling the carrier lifetime in n− 4H–SiC epilayers with low Z1/2 concentrations PB Klein, R Myers-Ward, KK Lew, BL VanMil, CR Eddy, DK Gaskill, ... Journal of Applied Physics 108 (3), 2010 | 75 | 2010 |
| Basal plane dislocation reduction for 8 off-cut, 4H-SiC using in situ variable temperature growth interruptions BL VanMil, RE Stahlbush, RL Myers-Ward, KK Lew, CR Eddy, DK Gaskill Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 58 | 2008 |
| Epitaxial graphene growth on SiC wafers DK Gaskill, G Jernigan, P Campbell, JL Tedesco, J Culbertson, B VanMil, ... ECS Transactions 19 (5), 117, 2009 | 54 | 2009 |
| 4H-SiC visible-blind single-photon avalanche diode for ultraviolet detection at 280 and 350 nm J Hu, X Xin, X Li, JH Zhao, BL VanMil, KK Lew, RL Myers-Ward, CR Eddy, ... IEEE transactions on electron devices 55 (8), 1977-1983, 2008 | 47 | 2008 |
| Graphene formation on SiC substrates BL VanMil, RL Myers-Ward, JL Tedesco, CR Eddy, GG Jernigan, ... Materials science forum 615, 211-214, 2009 | 45 | 2009 |
| Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers SI Maximenko, JA Freitas, RL Myers-Ward, KK Lew, BL VanMil, CR Eddy, ... Journal of applied physics 108 (1), 2010 | 40 | 2010 |
| Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8 BL VanMil, KK Lew, RL Myers-Ward, RT Holm, DK Gaskill, CR Eddy Jr, ... Journal of Crystal Growth 311 (2), 238-243, 2009 | 40 | 2009 |
| Improvement of morphology and free carrier mobility through argon-assisted growth of epitaxial graphene on silicon carbide JL Tedesco, B VanMil, RL Myers-Ward, J Culbertson, G Jernigan, ... ECS Transactions 19 (5), 137, 2009 | 37 | 2009 |
| High temperature limitations for GaN growth by rf-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, hydrogen, and excess Ga-overpressure BL VanMil, H Guo, LJ Holbert, K Lee, TH Myers, T Liu, D Korakakis Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 37 | 2004 |
| Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition A Jain, X Weng, S Raghavan, BL VanMil, T Myers, JM Redwing Journal of Applied Physics 104 (5), 2008 | 33 | 2008 |
| Heavy Cr doping of ZnSe by molecular beam epitaxy BL Vanmil, AJ Ptak, L Bai, L Wang, M Chirila, NC Giles, TH Myers, ... Journal of electronic materials 31, 770-775, 2002 | 31 | 2002 |
| Nanocrystalline diamond films as UV-semitransparent Schottky contacts to 4H-SiC MJ Tadjer, KD Hobart, JD Caldwell, JE Butler, KX Liu, CR Eddy, ... Applied Physics Letters 91 (16), 2007 | 29 | 2007 |
| Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN TH Myers, BL VanMil, LJ Holbert, CY Peng, CD Stinespring, J Alam, ... Journal of crystal growth 246 (3-4), 244-251, 2002 | 26 | 2002 |
