| Highly scalable (30 nm) and ultra-low-energy (~ 5fJ/pulse) vertical sensing ECRAM with ideal synaptic characteristics using ion-permeable graphene electrodes J Lee, RD Nikam, D Kim, H Hwang 2022 International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2022 | 14 | 2022 |
| On-chip integrated atomically thin 2D material heater as a training accelerator for an electrochemical random-access memory synapse for neuromorphic computing application RD Nikam, J Lee, W Choi, D Kim, H Hwang ACS nano 16 (8), 12214-12225, 2022 | 10 | 2022 |
| Improving the selector characteristics of ovonic threshold switch via UV treatment process Y Seo, J Lee, S Ban, D Kim, G Han, H Hwang Applied Physics Letters 123 (24), 2023 | 3 | 2023 |
| Enhancement of NbO2-based oscillator neuron device performance via cryogenic operation O Kwon, S Heo, D Kim, J Kim, H Hwang Nanotechnology 35 (10), 105203, 2023 | 2 | 2023 |
| Bypass Resistive RAM with Interface Switching-Based Resistive RAM and InGaZnO Bypass Transistor for V-NAND Applications G Han, K Lee, D Kim, Y Seo, J Lee, J Choi, D Ahn, S Oh, H Hwang IEEE Electron Device Letters, 2023 | 2 | 2023 |
| Experimental Demonstration of Probabilistic-Bit (p-bit) Utilizing Stochastic Oscillation of Threshold Switch Device S Heo, D Kim, W Choi, S Ban, O Kwon, H Hwang 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 2 | 2023 |
| Understanding Controlled Ion Doping Mechanism of Vertical Sensing Electrochemical Random Access Memory Using Ion-Permeable Graphene Electrodes J Lee, RD Nikam, D Kim, H Hwang IEEE Transactions on Electron Devices 70 (7), 3951-3957, 2023 | 2 | 2023 |
| Inherent Stochasticity of Ovonic Threshold Switch for Neuronal Dropout of Edge-AI Hardware D Kim, W Choi, J Lee, H Hwang IEEE Electron Device Letters 44 (8), 1372-1375, 2023 | 1 | 2023 |
| Excellent Reliability Characteristics of Ovonic Threshold Switch Device with Higher‐Temperature Forming Technique J Lee, S Ban, Y Seo, D Kim, H Hwang physica status solidi (RRL)–Rapid Research Letters 18 (10), 2300412, 2024 | | 2024 |
