| Direct Observation of Self-Heating in III-V Gate-All-Around Nanowire MOSFETs S Shin, MA Wahab, M Masuduzzaman, K Maize, J Gu, M Si, A Shakouri, ... Electron Devices, IEEE Transactions on 62 (11), 3516-3523, 2015 | 85 | 2015 |
| Direct Observation of Self-Heating in III-V Gate-All-Around Nanowire MOSFETs S Shin, M Masuduzzaman, MA Wahab, K Maize, JJ Gu, M Si, A Shakouri, ... Electron Devices Meeting (IEDM), 2014 IEEE International, 20.3.1 - 20.3.4, 2014 | 85 | 2014 |
| The Impact of Self-Heating on HCI Reliability in High-Performance Digital Circuits H Jiang, SH Shin, X Liu, X Zhang, MA Alam IEEE Electron Device Letters 38 (4), 430-433, 2017 | 48 | 2017 |
| A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: A topical review MA Alam, BK Mahajan, YP Chen, W Ahn, H Jiang, SH Shin IEEE Transactions on Electron Devices 66 (11), 4556-4565, 2019 | 45 | 2019 |
| Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs M Si, NJ Conrad, S Shin, J Gu, J Zhang, MA Alam, PD Ye Electron Devices, IEEE Transactions on, 1,1, 2015 | 45 | 2015 |
| Integrated modeling of self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits W Ahn, SH Shin, C Jiang, H Jiang, MA Wahab, MA Alam Microelectronics Reliability 81, 262-273, 2018 | 41 | 2018 |
| 3D Modeling of Spatio-temporal Heat-transport in III-V Gate-all-around Transistors Allows Accurate Estimation and Optimization of Nanowire Temperature MA Wahab, S Shin, MA Alam Electron Devices, Transactions on 62 (11), 3595 - 3604, 2015 | 41 | 2015 |
| Characterization of self-heating leads to universal scaling of HCI degradation of multi-fin SOI FinFETs H Jiang, SH Shin, X Liu, X Zhang, MA Alam 2016 IEEE International Reliability Physics Symposium (IRPS), 2A-3-1-2A-3-7, 2016 | 40 | 2016 |
| Impact of nanowire variability on performance and reliability of gate-all-around III-V MOSFETs SH Shin, M Masuduzzaman, JJ Gu, MA Wahab, N Conrad, M Si, PD Ye, ... 2013 IEEE International Electron Devices Meeting, 7.5. 1-7.5. 4, 2013 | 38 | 2013 |
| Proton-doped strongly correlated perovskite nickelate memory devices K Ramadoss, F Zuo, Y Sun, Z Zhang, J Lin, U Bhaskar, S Shin, MA Alam, ... IEEE Electron Device Letters 39 (10), 1500-1503, 2018 | 34 | 2018 |
| Substrate and layout engineering to suppress self-heating in floating body transistors SH Shin, SH Kim, S Kim, H Wu, PD Ye, MA Alam 2016 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2016 | 32 | 2016 |
| A Predictive Model for IC Self-Heating Based on Effective Medium and Image Charge Theories and Its Implications for Interconnect and Transistor Reliability W Ahn, H Zhang, T Shen, C Christiansen, P Justison, S Shin, MA Alam IEEE Transactions on Electron Devices, 2017 | 28 | 2017 |
| A novel synthesis of Rent's rule and effective-media theory predicts FEOL and BEOL reliability of self-heated ICs W Ahn, H Jiang, SH Shin, MA Alam 2016 IEEE International Electron Devices Meeting (IEDM), 7.1. 1-7.1. 4, 2016 | 24 | 2016 |
| Origin and implications of hot carrier degradation of gate-all-around nanowire III–V MOSFETs SH Shin, MA Wahab, M Masuduzzaman, M Si, J Gu, PD Ye, MA Alam 2014 IEEE International Reliability Physics Symposium, 4A. 3.1-4A. 3.6, 2014 | 23 | 2014 |
| Highly stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for monolithic 3-D integration of InGaAs MOSFETs S Kim, SK Kim, S Shin, JH Han, DM Geum, JP Shim, S Lee, H Kim, G Ju, ... IEEE Journal of the Electron Devices Society 7, 869-877, 2019 | 22 | 2019 |
| Low-frequency noise and RTN on near-ballistic III–V GAA nanowire MOSFETs N Conrad, M Si, SH Shin, JJ Gu, J Zhang, MA Alam, PD Ye Electron Devices Meeting (IEDM), 2014 IEEE International, 20.1.1 - 20.1. 4, 2014 | 19 | 2014 |
| Performance and variability studies of InGaAs gate-all-around nanowire MOSFETs N Conrad, SH Shin, J Gu, M Si, H Wu, M Masuduzzaman, MA Alam, ... IEEE Transactions on Device and Materials Reliability 13 (4), 489-496, 2013 | 18 | 2013 |
| Performance potential of Ge CMOS technology from a material-device-circuit perspective SH Shin, H Jiang, W Ahn, H Wu, W Chung, DY Peide, MA Alam IEEE Transactions on Electron Devices 65 (5), 1679-1684, 2018 | 17 | 2018 |
| Spatio-temporal mapping of device temperature due to self-heating in Sub-22 nm transistors MA Wahab, SH Shin, MA Alam 2016 IEEE International Reliability Physics Symposium (IRPS), XT-05-1-XT-05-6, 2016 | 13 | 2016 |
| Fundamental trade-off between short-channel control and hot carrier degradation in an extremely-thin silicon-on-insulator (ETSOI) technology SH Shin, MA Wahab, W Ahn, A Ziabari, K Maize, A Shakouri, MA Alam 2015 IEEE International Electron Devices Meeting (IEDM), 20.3. 1-20.3. 4, 2015 | 12 | 2015 |
Muhammad Ashraful AlamJai N. Gupta Professor of Electrical Engineering, Purdue University在 purdue.edu 的电子邮件经过验证
