| Development of InGaN-based red LED grown on (0001) polar surface JI Hwang, R Hashimoto, S Saito, S Nunoue Applied Physics Express 7 (7), 071003, 2014 | 300 | 2014 |
| InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range S Saito, R Hashimoto, J Hwang, S Nunoue Applied Physics Express 6 (11), 111004, 2013 | 220 | 2013 |
| High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor JI Hwang, Y Ishida, M Kobayashi, H Hirata, K Takubo, T Mizokawa, ... Physical Review B—Condensed Matter and Materials Physics 72 (8), 085216, 2005 | 120 | 2005 |
| Semiconductor light emitting element H Katsuno, S Saito, R Hashimoto, J Hwang, S Nunoue US Patent 9,076,929, 2015 | 64 | 2015 |
| High‐efficiency green‐yellow light‐emitting diodes grown on sapphire (0001) substrates R Hashimoto, J Hwang, S Saito, S Nunoue physica status solidi (c) 10 (11), 1529-1532, 2013 | 62 | 2013 |
| Semiconductor light emitting element and method for manufacturing the same R Hashimoto, S Kimura, J Hwang, H Katsuno, S Saito, S Nunoue US Patent 9,337,400, 2016 | 40 | 2016 |
| High-energy spectroscopy study of the ferromagnetic diluted magnetic semiconductor Zn1-xVxO Y Ishida, JI Hwang, M Kobayashi, A Fujimori, H Saeki, H Tabata, T Kawai Physica B: Condensed Matter 351 (3-4), 304-306, 2004 | 39 | 2004 |
| In situ Photoemission Study of the Room Temperature Ferromagnet Y Ishida, DD Sarma, K Okazaki, J Okabayashi, JI Hwang, H Ott, A Fujimori, ... Physical review letters 91 (10), 107202, 2003 | 38 | 2003 |
| Semiconductor light emitting device H Katsuno, S Saito, R Hashimoto, J Hwang, S Nunoue US Patent App. 14/815,083, 2015 | 33 | 2015 |
| Semiconductor light emitting device H Katsuno, S Saito, R Hashimoto, J Hwang, S Nunoue US Patent 9,136,253, 2015 | 33 | 2015 |
| Semiconductor light emitting element and method for manufacturing the same R Hashimoto, S Kimura, J Hwang, H Katsuno, S Saito, S Nunoue US Patent 9,202,994, 2015 | 32 | 2015 |
| High‐efficiency yellow light‐emitting diodes grown on sapphire (0001) substrates R Hashimoto, J Hwang, S Saito, S Nunoue physica status solidi (c) 11 (3‐4), 628-631, 2014 | 31 | 2014 |
| Soft x-ray magnetic circular dichroism study of weakly ferromagnetic Zn1− xVxO thin film Y Ishida, JI Hwang, M Kobayashi, Y Takeda, K Mamiya, J Okamoto, ... Applied physics letters 90 (2), 2007 | 29 | 2007 |
| Antiferromagnetic interaction between paramagnetic Co ions in the diluted magnetic semiconductor M Kobayashi, Y Ishida, JI Hwang, Y Osafune, A Fujimori, Y Takeda, ... Physical Review B—Condensed Matter and Materials Physics 81 (7), 075204, 2010 | 24 | 2010 |
| X-ray magnetic circular dichroism characterization of GaN∕ Ga1− xMnxN digital ferromagnetic heterostructure JI Hwang, M Kobayashi, GS Song, A Fujimori, A Tanaka, ZS Yang, HJ Lin, ... Applied Physics Letters 91 (7), 2007 | 22 | 2007 |
| Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer T Shioda, H Hung, J Hwang, H Yoshida, N Sugiyama, S Nunoue US Patent 8,785,943, 2014 | 19 | 2014 |
| Local electronic structure of Cr in the II–VI diluted ferromagnetic semiconductor Zn1-xCrxTe M Kobayashi, Y Ishida, JI Hwang, GS Song, A Fujimori, CS Yang, L Lee, ... New Journal of Physics 10 (5), 055011, 2008 | 18 | 2008 |
| High-power 2.8 W blue-violet laser diode for white light sources R Hashimoto, H Hung, J Hwang, S Saito, S Nunoue Optical review 19, 412-414, 2012 | 16 | 2012 |
| Semiconductor light-emitting device Y Hattori, S Saito, S Nunoue, E Muramoto, K Tachibana, S Abe, J Hwang, ... US Patent 7,915,630, 2011 | 16 | 2011 |
| Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion JI Hwang, Y Osafune, M Kobayashi, K Ebata, Y Ooki, Y Ishida, A Fujimori, ... Journal of applied physics 101 (10), 2007 | 16 | 2007 |
