| Understanding hot carrier reliability in FinFET technology from trap-based approach R Wang, Z Sun, YY Liu, Z Yu, Z Wang, X Jiang, R Huang 2021 IEEE International Electron Devices Meeting (IEDM), 31.2. 1-31.2. 4, 2021 | 23 | 2021 |
| On the Baliga’s figure-of-merits (BFOM) enhancement of a novel GaN nano-pillar vertical field effect transistor (FET) with 2DEG channel and patterned substrate Z Wang, Z Wang, Z Zhang, D Yang, Y Yao Nanoscale Research Letters 14, 1-10, 2019 | 19 | 2019 |
| A high-performance tunable LED-compatible current regulator using an integrated voltage nanosensor Z Wang, S Wang, Z Zhang, C Wang, D Yang, X Chen, Z Wang, J Cao, ... IEEE Transactions on Electron Devices 66 (4), 1917-1923, 2019 | 19 | 2019 |
| Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage Z Wang, W Chen, F Wang, J Cao, R Sun, K Ren, Y Luo, S Guo, Z Wang, ... Superlattices and Microstructures 117, 330-335, 2018 | 18 | 2018 |
| Design and optimization on a novel high-performance ultra-thin barrier AlGaN/GaN power HEMT with local charge compensation trench Z Wang, Z Zhang, S Wang, C Chen, Z Wang, Y Yao Applied Sciences 9 (15), 3054, 2019 | 15 | 2019 |
| Simulation study of high‐reverse blocking AlGaN/GaN power rectifier with an integrated lateral composite buffer diode Z Wang, F Wang, S Guo, Z Wang Micro & Nano Letters 12 (9), 660-663, 2017 | 14 | 2017 |
| Investigation of the off-state degradation in advanced FinFET technology—Part I: Experiments and analysis Z Sun, Z Wang, R Wang, L Zhang, J Zhang, Z Zhang, J Song, D Wang, ... IEEE Transactions on Electron Devices 70 (3), 914-920, 2023 | 8 | 2023 |
| Body bias dependence of bias temperature instability (BTI) in bulk FinFET technology J Zhang, Z Wang, R Wang, Z Sun, R Huang Energy & Environmental Materials 5 (4), 1200-1203, 2022 | 8 | 2022 |
| Compact modeling of quantum confinements in nanoscale gate-all-around MOSFETs B Peng, Y Jiao, H Zhong, Z Rong, Z Wang, Y Xiao, W Wong, L Zhang, ... Fundamental Research, 2023 | 7 | 2023 |
| On the understanding of pMOS NBTI degradation in advance nodes: Characterization, modeling, and exploration on the physical origin of defects Y Xue, P Ren, J Wu, Z Liu, S Wang, Y Li, Z Wang, Z Sun, D Wang, Y Wen, ... IEEE Transactions on Electron Devices, 2023 | 6 | 2023 |
| Comprehensive study of NBTI and off-state reliabilty in sub-20 nm DRAM technology: trap identification, compact aging model, and impact on retention degradation Z Sun, P Cai, J Song, D Wang, Z Liu, L Zhou, T Zhu, Y Xue, Y Liu, Z Wang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 3 | 2023 |
| New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance,(100) vs (110), and nMOS vs pMOS Z Wang, H Lu, Z Sun, C Shen, B Peng, WF Li, Y Xue, D Wang, Z Ji, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 3 | 2023 |
| On the understanding of defects in short-term negative bias temperature instability (NBTI) for sub-20-nm DRAM technology D Wang, L Zhou, Y Xue, P Ren, Z Sun, Z Wang, J Wang, B Wu, Z Ji, ... IEEE Electron Device Letters 44 (6), 939-942, 2023 | 3 | 2023 |
| Investigation of hot carrier enhanced body bias effect in advanced FinFET technology Z Sun, H Lu, Y Xue, W Luo, Z Wang, J Zhang, Z Ji, R Wang, R Huang 2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023 | 3 | 2023 |
| Investigation of the off-state degradation in advanced FinFET technology—Part II: Compact aging model and impact on circuits Z Sun, Z Wang, R Wang, L Zhang, J Zhang, Z Zhang, J Song, D Wang, ... IEEE Transactions on Electron Devices 70 (3), 921-927, 2023 | 3 | 2023 |
| Van der Waals polarity-engineered 3D integration of 2D complementary logic Y Guo, J Li, X Zhan, C Wang, M Li, B Zhang, Z Wang, Y Liu, K Yang, ... Nature, 1-7, 2024 | 2 | 2024 |
| Advanced compact modeling for transistor aging: Trap-based approaches and mixed-mode coupling R Wang, Z Sun, Y Li, Y Xue, Z Wang, P Ren, Z Ji, L Zhang, R Huang 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 2 | 2023 |
| New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic Temperature Z Wang, H Wang, Y Wang, Z Sun, L Zeng, R Wang, R Huang 2024 IEEE International Reliability Physics Symposium (IRPS), 6A. 3-1-6A. 3-7, 2024 | | 2024 |
| The interface states in gate-all-around transistors (GAAFETs) YY Liu, H Lu, Z Wang, HX Deng, L Zeng, Z Wei, JW Luo, R Wang arXiv preprint arXiv:2308.08101, 2023 | | 2023 |
Zixuan SunPeking university在 stu.pku.edu.cn 的电子邮件经过验证
Zixuan SunPeking university在 stu.pku.edu.cn 的电子邮件经过验证
Zeheng WangCERC Fellow, CSIRO在 csiro.au 的电子邮件经过验证
zuodong zhangPeking University在 pku.edu.cn 的电子邮件经过验证