| Recent progress in resistive random access memories: materials, switching mechanisms, and performance F Pan, S Gao, C Chen, C Song, F Zeng Materials Science and Engineering: R: Reports 83, 1-59, 2014 | 1425 | 2014 |
| Resistive Switching and Magnetic Modulation in Cobalt‐Doped ZnO G Chen, C Song, C Chen, S Gao, F Zeng, F Pan Advanced Materials 24 (26), 3515-3520, 2012 | 287 | 2012 |
| Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system S Li, F Zeng, C Chen, H Liu, G Tang, S Gao, C Song, Y Lin, F Pan, D Guo Journal of Materials Chemistry C 1 (34), 5292-5298, 2013 | 278 | 2013 |
| Nonvolatile resistive switching memories-characteristics, mechanisms and challenges F Pan, C Chen, Z Wang, Y Yang, J Yang, F Zeng Progress in Natural Science: Materials International 20, 1-15, 2010 | 270 | 2010 |
| Improved Dielectric Properties and Energy Storage Density of Poly (vinylidene fluoride-co-hexafluoropropylene) Nanocomposite with Hydantoin Epoxy Resin Coated BaTiO3. H Luo, D Zhang, C Jiang, X Yuan, C Chen, K Zhou ACS applied materials & interfaces, 2015 | 252 | 2015 |
| Dynamic processes of resistive switching in metallic filament-based organic memory devices S Gao, C Song, C Chen, F Zeng, F Pan The Journal of Physical Chemistry C 116 (33), 17955-17959, 2012 | 235 | 2012 |
| Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device C Chen, YC Yang, F Zeng, F Pan Applied Physics Letters 97 (8), 083502-083502-3, 2010 | 191 | 2010 |
| Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure C Chen, F Pan, ZS Wang, J Yang, F Zeng Journal of Applied Physics 111 (1), 013702, 2012 | 142 | 2012 |
| Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure C Chen, C Song, J Yang, F Zeng, F Pan Applied Physics Letters 100 (25), 253509, 2012 | 134 | 2012 |
| Electrical manipulation of orbital occupancy and magnetic anisotropy in manganites B Cui, C Song, GA Gehring, F Li, G Wang, C Chen, J Peng, H Mao, ... Advanced Functional Materials, 2014 | 121 | 2014 |
| Conductance quantization in a Ag filament-based polymer resistive memory S Gao, F Zeng, C Chen, G Tang, Y Lin, Z Zheng, C Song, F Pan Nanotechnology 24 (33), 335201, 2013 | 105 | 2013 |
| Reversible Ferromagnetic Phase Transition in Electrode‐Gated Manganites B Cui, C Song, G Wang, Y Yan, J Peng, J Miao, H Mao, F Li, C Chen, ... Advanced Functional Materials 24 (46), 7233-7240, 2014 | 104 | 2014 |
| Formation process of conducting filament in planar organic resistive memory S Gao, C Song, C Chen, F Zeng, F Pan Applied Physics Letters 102 (14), 141606, 2013 | 104 | 2013 |
| Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices YS Lin, F Zeng, SG Tang, HY Liu, C Chen, S Gao, YG Wang, F Pan Journal of Applied Physics 113 (6), 064510, 2013 | 104 | 2013 |
| Resistive switching induced by metallic filaments formation through Poly (3, 4-ethylene-dioxythiophene): Poly (styrenesulfonate) Z Wang, F Zeng, J Yang, C Chen, F Pan ACS applied materials & interfaces 4 (1), 447-453, 2011 | 104 | 2011 |
| Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices C Chen, S Gao, F Zeng, GS Tang, SZ Li, C Song, HD Fu, F Pan Journal of Applied Physics 114 (1), 014502, 2013 | 90 | 2013 |
| Conductance quantization in oxygen-anion-migration-based resistive switching memory devices C Chen, S Gao, F Zeng, GY Wang, SZ Li, C Song, F Pan Applied Physics Letters 103 (4), 043510, 2013 | 86 | 2013 |
| Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer G Tang, F Zeng, C Chen, H Liu, S Gao, C Song, Y Lin, G Chen, F Pan Nanoscale 5 (1), 422-428, 2013 | 77 | 2013 |
| Reproducible and controllable organic resistive memory based on Al/poly (3, 4-ethylene-dioxythiophene): poly (styrenesulfonate)/Al structure ZS Wang, F Zeng, J Yang, C Chen, YC Yang, F Pan Applied Physics Letters 97 (25), 253301, 2010 | 65 | 2010 |
| Effect of Electrode Materials on AlN-Based Bipolar and Complementary Resistive Switching C Chen, S Gao, G Tang, H Fu, G Wang, C Song, F Zeng, F Pan ACS applied materials & interfaces 5 (5), 1793-1799, 2013 | 63 | 2013 |
