| Lowering the Schottky barrier height by titanium contact for high-drain current in mono-layer MoS2 transistor R Sridevi, J Charles Pravin, A Ramesh Babu, J Ajayan Journal of Electronic Materials 50 (6), 3295-3301, 2021 | 14 | 2021 |
| Investigation of Quantum Confinement Effects on Molybdenum Disulfide (MoS2) Based Transistor Using Ritz Galerkin Finite Element Technique R Sridevi, JC Pravin, AR Babu, D Nirmal Silicon, 1-7, 2021 | 10 | 2021 |
| Design and simulation of 22nm FinFET structure using TCAD R Kalaivani, JC Pravin, SA Kumar, R Sridevi 2020 5th International Conference on Devices, Circuits and Systems (ICDCS …, 2020 | 10 | 2020 |
| Implementation of charge plasma based dopingless multi bridge channel MOSFET for enhanced performances SA Kumar, JC Pravin, V Sandeep, R Sridevi Physica E: Low-dimensional Systems and Nanostructures 147, 115619, 2023 | 7 | 2023 |
| Minimizationof wirelength in 3d IC routing by using differential evolution algorithm K Pandiaraj, P Sivakumar, R Sridevi 2017 IEEE international conference on electrical, instrumentation and …, 2017 | 7 | 2017 |
| High Performance Double Gated Molybdenum Disulfide (MoS2) Transistor for Low Power Applications R Sridevi, JC Pravin 2019 IEEE International Conference on Clean Energy and Energy Efficient …, 2019 | 2 | 2019 |
| Facile construction of MoS2 decorated CdS hybrid heterojunction with enhanced hydrogen generation performance R Sridevi, A Prakasam, PM Anbarasan, R Kumar, M Karthik, ... Chemical Physics Impact 8, 100584, 2024 | 1 | 2024 |
| Investigation of Quantum Mechanical Effects in Back Gated Molybdenum Disulfide Transistor R Sridevi, A Kumar Silicon 14 (18), 12185-12190, 2022 | 1 | 2022 |
| Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications R Sridevi, JC Pravin Semiconductor Devices and Technologies for Future Ultra Low Power …, 2021 | 1 | 2021 |
| Potential and drain current simulation of a symmetric double gated Molybdenum Disulfide (MoS2) transistor R Sridevi, JC Pravin 3C T ecnologia. Glosas de innovation aplicadas a la pyme, Edición Especial …, 2021 | 1 | 2021 |
| A review on applications of molybdenum disulfide material: Recent developments G Anushya, M Benjamin, R Sarika, JC Pravin, R Sridevi, D Nirmal Micro and Nanostructures, 207742, 2023 | | 2023 |
| Drain Current Analysis of the Negative Capacitance Field Effect Transistor R Sridevi, E Logeshwaran, B Muthukumar, S Vasanthakumar 2022 International Conference on Sustainable Computing and Data …, 2022 | | 2022 |
| Design and Simulation of 22nm FinFET Structure Using TCAD JC Pravin, R Sridevi, R Kalaivani, SA Kumar | | |
| Modeling and Simulation of Molybdenum Disulfide 2D Material Based Field Effect Transistors R Sridevi Virudhunagar, 0 | | |
Ashok Kumar ShanmugarajAssociate Professor在 kahedu.edu.in 的电子邮件经过验证
