Color pattern and pixel level binning for aps image sensor using 2× 2 photodiode sharing scheme A Lahav, D Cohen US Patent 7,773,138, 2010 | 121 | 2010 |
High performance silicon imaging: fundamentals and applications of cmos and ccd sensors D Durini Woodhead Publishing, 2019 | 89 | 2019 |
Kirana: a solid-state megapixel uCMOS image sensor for ultrahigh speed imaging J Crooks, B Marsh, R Turchetta, K Taylor, W Chan, A Lahav, A Fenigstein Sensors, cameras, and systems for industrial and scientific applications XIV …, 2013 | 83 | 2013 |
Three-dimensional control-gate architecture for single poly EPROM memory devices fabricated in planar CMOS technology A Fenigstein, Z Kuritsky, A Lahav, I Naot, Y Roizin US Patent 7,671,396, 2010 | 63* | 2010 |
CMOS image sensor with high sensitivity wide dynamic range pixel for high resolution applications A Lahav, A Fenigstein US Patent 8,089,035, 2012 | 39 | 2012 |
Non-thermal electromagnetic radiation damage to lens epithelium E Bormusov, UP Andley, N Sharon, L Schächter, A Lahav, A Dovrat The open ophthalmology journal 2, 102, 2008 | 38 | 2008 |
Localized effects of microwave radiation on the intact eye lens in culture conditions A Dovrat, R Berenson, E Bormusov, A Lahav, T Lustman, N Sharon, ... Bioelectromagnetics: Journal of the Bioelectromagnetics Society, The Society …, 2005 | 38 | 2005 |
CMOS image sensor with wide (intra-scene) dynamic range A Lahav, A Fenigstein US Patent 8,279,328, 2012 | 34 | 2012 |
Large-format medical X-ray CMOS image sensor for high resolution high frame rate applications R Reshef, T Leitner, S Alfassi, E Sarig, N Golan, O Berman, A Fenigstein, ... Proc. Int. Image Sens. Workshop, 1-4, 2009 | 31 | 2009 |
Optimization of random telegraph noise non uniformity in a CMOS pixel with a pinned-photodiode A Lahav, D Veinger, A Fenigstein, A Shiwalkar Proc. Int. Image Sens. Workshop, 230-234, 2007 | 31 | 2007 |
High performance 2.5 um global shutter pixel with new designed light-pipe structure T Yokoyama, M Tsutsui, Y Nishi, I Mizuno, V Dmitry, A Lahav 2018 IEEE International Electron Devices Meeting (IEDM), 10.5. 1-10.5. 4, 2018 | 24 | 2018 |
Backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensors A Lahav, A Fenigstein, A Strum, S Rizzolo High Performance Silicon Imaging, 95-117, 2020 | 22 | 2020 |
Image sensor pixel with memory node having buried channel and diode portions A Lahav, A Fenigstein, Y Roizin, A Strum US Patent 9,729,810, 2017 | 21 | 2017 |
A 4e-noise 2/3-inch global shutter 1920x1080P120 CMOS-Imager P Centen, S Lehr, S Roth, J Rotte, F Heizmann, A Momin, R Dohmen, ... Proc. of IISW, 409-412, 2013 | 20 | 2013 |
Image sensor pixel with memory node having buried channel and diode portions formed on N-type substrate A Lahav, A Fenigstein, Y Roizin, A Strum US Patent 9,865,632, 2018 | 19 | 2018 |
Ultra-high speed imaging at megaframes per second with a megapixel CMOS image sensor J Crooks, B Marsh, R Turchetta, K Taylor, W Chan, A Lahav, A Fenigstein International Image Sensor Workshop, 4-7, 2013 | 19 | 2013 |
Shared readout low noise global shutter image sensor method A Lahav, A Fenigstein US Patent 9,210,345, 2015 | 18 | 2015 |
Enhanced X-ray CMOS sensor panel for radio and fluoro application using a low noise charge amplifier wixel with a Partially Pinned PD A Lahav, R Reshef, A Fenigstein Proc. Int. Image Sensor Workshop (IISW), 1-4, 2011 | 18 | 2011 |
A high-performance 2.5 μm charge domain global shutter pixel and near infrared enhancement with light pipe technology I Mizuno, M Tsutsui, T Yokoyama, T Hirata, Y Nishi, D Veinger, A Birman, ... Sensors 20 (1), 307, 2020 | 16 | 2020 |
CMOS image sensor 3T Nwell photodiode pixel SPICE model T Reiner, B Mishori, T Leitner, A Horovitz, Y Vainbaum, M Hakim, A Lahav, ... 2004 23rd IEEE Convention of Electrical and Electronics Engineers in Israel …, 2004 | 16 | 2004 |