| Investigation of electrically active defects in SiC power diodes caused by heavy ion irradiation N Für, M Belanche, C Martinella, P Kumar, ME Bathen, U Grossner IEEE Transactions on Nuclear Science 70 (8), 1892-1899, 2023 | 16 | 2023 |
| The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers M Ghezellou, P Kumar, ME Bathen, R Karsthof, EÖ Sveinbjörnsson, ... APL Materials 11 (3), 2023 | 12 | 2023 |
| Dual configuration of shallow acceptor levels in 4H-SiC ME Bathen, P Kumar, M Ghezellou, M Belanche, L Vines, J Ul-Hassan, ... Materials Science in Semiconductor Processing 177, 108360, 2024 | 4 | 2024 |
| Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime ME Bathen, R Karsthof, A Galeckas, P Kumar, AY Kuznetsov, U Grossner, ... Materials Science in Semiconductor Processing 176, 108316, 2024 | 4 | 2024 |
| Al-implantation induced damage in 4H-SiC P Kumar, MIM Martins, ME Bathen, T Prokscha, U Grossner Materials Science in Semiconductor Processing 174, 108241, 2024 | 4 | 2024 |
| Defect Profiling of Oxide‐Semiconductor Interfaces Using Low‐Energy Muons M Mendes Martins, P Kumar, J Woerle, X Ni, U Grossner, T Prokscha Advanced Materials Interfaces 10 (21), 2300209, 2023 | 4 | 2023 |
| Investigation of the - Interface Using Low-Energy Muon-Spin-Rotation Spectroscopy P Kumar, MIM Martins, ME Bathen, J Woerle, T Prokscha, U Grossner Physical Review Applied 19 (5), 054025, 2023 | 4 | 2023 |
| Energy-dependent impact of proton irradiation on 4H-SiC schottky diodes P Kumar, M Belanche, N Für, L Guzenko, J Woerle, ME Bathen, ... Materials Science Forum 1092, 187-192, 2023 | 3 | 2023 |
| Sensitivity of Dit Extraction at the SiO2/SiC Interface Using Quasi-Static Capacitance-Voltage Measurements M Belanche Guadas, P Kumar, J Woerle, R Stark, U Grossner Materials Science Forum 1062, 346-350, 2022 | 3 | 2022 |
| Exploring the border traps near the SiO2-SiC interface using conductance measurements P Kumar, M Krummenacher, HG Medeiros, S Race, P Natzke, ... 2024 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2024 | 1 | 2024 |
| Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC M Belanche, ME Bathen, P Kumar, C Dorfer, C Martinella, U Grossner Defect and Diffusion Forum 426, 23-28, 2023 | 1 | 2023 |
| Gate Impedance Analysis of SiC power MOSFETs with SiO2 and High-k Dielectric S Race, P Kumar, P Natzke, I Kovacevic-Badstuebner, ME Bathen, ... 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 1 | 2023 |
| Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique C Dorfer, ME Bathen, S Race, P Kumar, A Tsibizov, J Woerle, U Grossner Applied Physics Letters 122 (18), 2023 | 1 | 2023 |
| MATLAB-based GUI development for stochastic noise analysis of tri-axial gyroscopes AD Rao, P Kumar, N Nain, VK Agrawal 2014 Fifth International Symposium on Electronic System Design, 109-114, 2014 | 1 | 2014 |
| Exploring the border traps near the valence band in the - system using above-band-gap optical excitation P Kumar, HG Medeiros, S Race, MIM Martins, P Ammann, ME Bathen, ... Physical Review Applied 21 (6), 064065, 2024 | | 2024 |
| Observation and manipulation of charge carrier distribution at the SiO/Si interface MM Martins, P Kumar, ME Bathen, Z Salman, U Grossner, T Prokscha arXiv preprint arXiv:2405.18211, 2024 | | 2024 |
| Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC P Kumar, ME Bathen, MIM Martins, T Prokscha, U Grossner Journal of Applied Physics 135 (18), 2024 | | 2024 |
| Data for Selective formation of vacancy-related emitters in SiC P Kumar | | 2024 |
| Depth-Resolved Study of the SiO2- SiC Interface Using Low-Energy Muon Spin Rotation Spectroscopy P Kumar, MM Martins, ME Bathen, J Woerle, T Prokscha, U Grossner Materials Science Forum 1062, 315-319, 2022 | | 2022 |
