Gwan-Hyoung Lee 个人学术档案

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引用	19569	11483
h 指数	46	38
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James C. HoneDepartment of Mechanical Engineering, Columbia University在 columbia.edu 的电子邮件经过验证
Chul-Ho LeeAssociate Professor, Seoul National University & Korea University (2014~2022)在 snu.ac.kr 的电子邮件经过验证
Philip KimHarvard University在 g.harvard.edu 的电子邮件经过验证
Kenji WatanabeNational Institute for Materials Science在 nims.go.jp 的电子邮件经过验证
Pinshane Y. HuangAssociate Professor of Materials Science, University of Illinois在 illinois.edu 的电子邮件经过验证
Tony F HeinzDepts. of Applied Physics, Photon Science, and, by courtesy, of Electrical Eng., SLAC, Stanford在 stanford.edu 的电子邮件经过验证
Young-Jun YuAssociate Professor, Department of Physics, Chungnam National University在 cnu.ac.kr 的电子邮件经过验证
Jong Hun KimInha University在 inha.ac.kr 的电子邮件经过验证
Changgu LeeSungkyunkwan University在 skku.edu 的电子邮件经过验证
Junyoung KwonSamsung Advanced Institute of Technology在 samsung.com 的电子邮件经过验证
T.TaniguchiNational Institute for Materials Science在 nims.go.jp 的电子邮件经过验证
Young Duck KimAssociate Professor, Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea在 khu.ac.kr 的电子邮件经过验证
Sunwoo LeeAssistant Professor, Nanyang Technological University在 ntu.edu.sg 的电子邮件经过验证
Xian (Annie) ZhangMechanical Engineering, Stevens Institute of Technology, Columbia University在 stevens.edu 的电子邮件经过验证
David A MullerProfessor of Applied and Engineering Physics, Cornell University在 cornell.edu 的电子邮件经过验证
Andrea CapassoResearcher, International Iberian Nanotechnology Laboratory - [email protected]在 inl.int 的电子邮件经过验证
Tony LowU of Minnesota, IBM Research, Columbia U, Purdue U, National U Singapore在 us.ibm.com 的电子邮件经过验证
Lei WangColumbia University在 columbia.edu 的电子邮件经过验证
Yilei LiPreviously Department of Physics, Stanford University在 stanford.edu 的电子邮件经过验证
Kenneth ShepardLau Family Professor of Electrical Engineering and Professor of Biomedical Engineering, Columbia在 ee.columbia.edu 的电子邮件经过验证

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Gwan-Hyoung Lee

Professor, Materials Science and Engineering, Seoul National University

在 snu.ac.kr 的电子邮件经过验证 - 首页

two-dimensional materials


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Tightly bound trions in monolayer MoS2 KF Mak, K He, C Lee, GH Lee, J Hone, TF Heinz, J Shan Nature materials 12 (3), 207-211, 2012	3098	2012
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide AM van der Zande, PY Huang, DA Chenet, TC Berkelbach, YM You, ... Nature materials 12, 554–561, 2013	2371	2013
Atomically thin pn junctions with van der Waals heterointerfaces CH Lee, GH Lee, AM van der Zande, W Chen, Y Li, M Han, X Cui, G Arefe, ... Nature Nanotechnology 9, 676-681, 2014	2312	2014
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform X Cui, GH Lee, YD Kim, G Arefe, PY Huang, CH Lee, DA Chenet, X Zhang, ... Nature Nanotechnology, 2015	1392	2015
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures GH Lee, YJ Yu, X Cui, N Petrone, CH Lee, MS Choi, DY Lee, C Lee, ... ACS nano 7 (9), 7931-7936, 2013	1244	2013
High-Strength Chemical-Vapor–Deposited Graphene and Grain Boundaries GH Lee, RC Cooper, SJ An, S Lee, A van der Zande, N Petrone, ... Science 340 (6136), 1073-1076, 2013	992	2013
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices MS Choi, GH Lee, YJ Yu, DY Lee, SH Lee, P Kim, J Hone, WJ Yoo Nature communications 4, 1624, 2013	774	2013
Effect of defects on the intrinsic strength and stiffness of graphene A Zandiatashbar, GH Lee, SJ An, S Lee, N Mathew, M Terrones, ... Nature communications 5, 3186, 2014	732	2014
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride GH Lee, YJ Yu, C Lee, C Dean, KL Shepard, P Kim, J Hone Applied Physics Letters 99 (24), 243114, 2011	584	2011
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage GH Lee, X Cui, YD Kim, G Arefe, X Zhang, CH Lee, F Ye, K Watanabe, ... ACS nano 9 (7), 7019-7026, 2015	451	2015
Measurement of Lateral and Interfacial Thermal Conductivity of Single-and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique X Zhang, D Sun, Y Li, GH Lee, X Cui, D Chenet, Y You, TF Heinz, ... ACS Applied Materials & Interfaces 7 (46), 25923-25929, 2015	376	2015
Graphene mechanical oscillators with tunable frequency C Chen, S Lee, VV Deshpande, GH Lee, M Lekas, K Shepard, J Hone Nature nanotechnology 8 (12), 923-927, 2013	332	2013
Graphene based heterostructures C Dean, AF Young, L Wang, I Meric, GH Lee, K Watanabe, T Taniguchi, ... Solid State Communications 152 (15), 1275-1282, 2012	295	2012
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge S Kang, D Lee, J Kim, A Capasso, HS Kang, JW Park, CH Lee, GH Lee 2D Materials 7 (2), 022003, 2020	218	2020
Effect of surface morphology on friction of graphene on various substrates DH Cho, L Wang, JS Kim, GH Lee, ES Kim, S Lee, SY Lee, J Hone, C Lee Nanoscale 5 (7), 3063-3069, 2013	187	2013
Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS₂ Heterostructure Devices S Rathi, I Lee, D Lim, J Wang, Y Ochiai, N Aoki, K Watanabe, T Taniguchi, ... Nano letters 15 (8), 5017-5024, 2015	176	2015
Mechanical properties of two-dimensional materials and their applications JH Kim, JH Jeong, N Kim, R Joshi, GH Lee Journal of Physics D: Applied Physics 52 (8), 083001, 2018	159	2018
Thickness-dependent Schottky barrier height of MoS2 field-effect transistors J Kwon, JY Lee, YJ Yu, CH Lee, X Cui, J Hone, GH Lee Nanoscale 9 (18), 6151-6157, 2017	159	2017
Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures JY Lee, JH Shin, GH Lee, CH Lee Nanomaterials 6 (11), 193, 2016	154	2016
Inking elastomeric stamps with micro‐patterned, single layer graphene to create high‐performance OFETs SJ Kang, B Kim, KS Kim, Y Zhao, Z Chen, GH Lee, J Hone, P Kim, ... Advanced Materials 23 (31), 3531, 2011	145	2011

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