| Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC J Rozen, S Dhar, ME Zvanut, JR Williams, LC Feldman Journal of Applied Physics 105 (12), 2009 | 206 | 2009 |
| Hysteresis and Franck-Condon relaxation in insulator-semiconductor tunneling WB Fowler, JK Rudra, ME Zvanut, FJ Feigl Physical Review B 41 (12), 8313, 1990 | 123 | 1990 |
| The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance ME Zvanut, VV Konovalov Applied Physics Letters 80 (3), 410-412, 2002 | 82 | 2002 |
| Rechargeable E′ centers in sputter‐deposited silicon dioxide films ME Zvanut, FJ Feigl, WB Fowler, JK Rudra, PJ Caplan, EH Poindexter, ... Applied physics letters 54 (21), 2118-2120, 1989 | 75 | 1989 |
| Vanadium donor and acceptor levels in semi-insulating 4H-and 6H-SiC WC Mitchel, WD Mitchell, G Landis, HE Smith, W Lee, ME Zvanut Journal of applied physics 101 (1), 2007 | 58 | 2007 |
| Identification of phosphorus in diamond thin films using electron paramagnetic‐resonance spectroscopy ME Zvanut, WE Carlos, JA Freitas Jr, KD Jamison, RP Hellmer Applied physics letters 65 (18), 2287-2289, 1994 | 57 | 1994 |
| Electrical-field-driven electron self-exchange in a mixed-valent osmium (II/III) bipyridine polymer: solid-state reactions of low exothermicity JC Jernigan, NA Surridge, ME Zvanut, M Silver, RW Murray The Journal of Physical Chemistry 93 (11), 4620-4627, 1989 | 55 | 1989 |
| Characterization of paramagnetic defect centers in three polytypes of dry heat treated, oxidized SiC PJ Macfarlane, ME Zvanut Journal of Applied Physics 88 (7), 4122-4127, 2000 | 54 | 2000 |
| Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H–SiC ME Zvanut, VV Konovalov, H Wang, WC Mitchel, WD Mitchell, G Landis Journal of applied physics 96 (10), 5484-5489, 2004 | 51 | 2004 |
| An annealing study of an oxygen vacancy related defect in SrTiO3 substrates ME Zvanut, S Jeddy, E Towett, GM Janowski, C Brooks, D Schlom Journal of Applied Physics 104 (6), 2008 | 48 | 2008 |
| Characterization of the luminescence center in photo-and electroluminescent amorphous silicon oxynitride films KJ Price, LE McNeil, A Suvkanov, EA Irene, PJ MacFarlane, ME Zvanut Journal of applied physics 86 (5), 2628-2637, 1999 | 47 | 1999 |
| Optical absorption of Fe in doped Ga2O3 S Bhandari, ME Zvanut, JB Varley Journal of Applied Physics 126 (16), 2019 | 43 | 2019 |
| High-field phenomena of qubits J van Tol, GW Morley, S Takahashi, DR McCamey, C Boehme, ME Zvanut Applied magnetic resonance 36, 259-268, 2009 | 42 | 2009 |
| SIMOX with epitaxial silicon: point defects and positive charge ME Zvanut, RE Stahlbush, WE Carlos, HL Hughes, RK Lawrence IEEE transactions on nuclear science 38 (6), 1253-1258, 1991 | 42 | 1991 |
| Spectroscopic characterization and laser performance of diffusion doped Cr2+: ZnS K Graham, SB Mirov, VV Fedorov, ME Zvanut, A Avanesov, V Badikov, ... Advanced solid state lasers, WB12, 2001 | 40 | 2001 |
| Effects of mixed-valent composition and bathing environment on solid-state electron self-exchanges in osmium bipyridine redox polymer films NA Surridge, ME Zvanut, FR Keene, CS Sosnoff, M Silver, RW Murray The Journal of Physical Chemistry 96 (2), 962-970, 1992 | 38 | 1992 |
| Hydrothermal behavior of diamond Y Gogotsi, T Kraft, KG Nickel, ME Zvanut Diamond and related materials 7 (10), 1459-1465, 1998 | 33 | 1998 |
| HF chemical etching of SiO2 on 4H and 6H SiC MB Johnson, ME Zvanut, O Richardson Journal of Electronic Materials 29, 368-371, 2000 | 31 | 2000 |
| Generation of thermally induced defects in buried SiO2 films ME Zvanut, TL Chen, RE Stahlbush, ES Steigerwalt, GA Brown Journal of applied physics 77 (9), 4329-4333, 1995 | 31 | 1995 |
| 240 GHz electron paramagnetic resonance studies of intrinsic defects in as-grown SiC VV Konovalov, ME Zvanut, J van Tol Physical Review B 68 (1), 012102, 2003 | 28 | 2003 |
Michal BockowskiInstitute of High Pressure Physics PAS在 unipress.waw.pl 的电子邮件经过验证
