| Regimes of GaAs quantum dot self-assembly by droplet epitaxy C Heyn, A Stemmann, A Schramm, H Welsch, W Hansen, Á Nemcsics Physical Review B—Condensed Matter and Materials Physics 76 (7), 075317, 2007 | 164 | 2007 |
| Faceting during GaAs quantum dot self-assembly by droplet epitaxy C Heyn, A Stemmann, A Schramm, H Welsch, W Hansen, Á Nemcsics Applied Physics Letters 90 (20), 2007 | 64 | 2007 |
| The RHEED tracking of the droplet epitaxial grown quantum dot and ring structures Á Nemcsics, C Heyn, A Stemmann, A Schramm, H Welsch, W Hansen Materials Science and Engineering: B 165 (1-2), 118-121, 2009 | 45 | 2009 |
| MBE Growth of Strained InxGa1−xAs on GaAs(001) Á Nemcsics, J Olde, M Geyer, R Schnurpfeil, R Manzke, M Skibowski physica status solidi (a) 155 (2), 427-437, 1996 | 29 | 1996 |
| Cross-sectional transmission electron microscopy of GaAs quantum dots fabricated by filling of droplet-etched nanoholes A Nemcsics, C Heyn, L Toth, L Dobos, A Stemmann, W Hansen Journal of Crystal Growth 335 (1), 58-61, 2011 | 28 | 2011 |
| Application of self-organizing maps for technological support of droplet epitaxy A Ürmös, Z Farkas, M Farkas, T Sándor, LT Kóczy, Á Nemcsics Acta Polytechnica Hungarica 14 (4), 207-224, 2017 | 25 | 2017 |
| Quantum dots prepared by droplet epitaxial method Á Nemcsics Quantum dots-theory and applications, 2015 | 24 | 2015 |
| Composition of the “GaAs” quantum dot, grown by droplet epitaxy Á Nemcsics, L Tóth, L Dobos, C Heyn, A Stemmann, A Schramm, ... Superlattices and Microstructures 48 (4), 351-357, 2010 | 24 | 2010 |
| Observation of dislocations in GaAs by (photo)-electrochemical method Á Nemcsics, L Petrás, K Somogyi Vacuum 41 (4-6), 1012-1015, 1990 | 19 | 1990 |
| Formation of Ge nanocrystals in SiO2 by electron beam evaporation P Basa, G Molnár, L Dobos, B Pécz, L Tóth, AL Tóth, AA Koós, L Dózsa, ... Journal of Nanoscience and Nanotechnology 8 (2), 818-822, 2008 | 18 | 2008 |
| A napelem és fejlesztési perspektívái Á Nemcsics Akadémiai Kiadó, 2001 | 18 | 2001 |
| Investigation of the surface morphology on epitaxially grown fullerene structures A Nemcsics, S Nagy, I Mojzes, R Schwedhelm, S Woedtke, R Adelung, ... Vacuum 84 (1), 152-154, 2009 | 17 | 2009 |
| Carrier profiling of a heterojunction bipolar transistor and p–i–n photodiode structures by electrochemical C–V technique R Kinder, Á Nemcsics, R Harman, F Riesz, B Pécz physica status solidi (a) 175 (2), 631-636, 1999 | 17 | 1999 |
| Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures ZJ Horváth, L Dózsa, V Van Tuyen, B Pődör, A Nemcsics, P Frigeri, ... Thin Solid Films 367 (1-2), 89-92, 2000 | 16 | 2000 |
| Facetting of the self-assembled droplet epitaxial GaAs quantum dot Á Nemcsics, L Tóth, L Dobos, A Stemmann Microelectronics Reliability 51 (5), 927-930, 2011 | 14 | 2011 |
| Novel material for an electrochemical solar cell A Nemcsics, S Kovacs, Z Labadi, KF Hesse, M Czank, P Turmezei, ... Solar energy materials and solar cells 89 (2-3), 175-183, 2005 | 13 | 2005 |
| Investigation of MBE grown inverted GaAs quantum dots Á Nemcsics, B Pődör, L Tóth, J Balázs, L Dobos, J Makai, M Csutorás, ... Microelectronics Reliability 59, 60-63, 2016 | 12 | 2016 |
| Morphological investigation of the electrochemically etched GaAs (001) surface Á Nemcsics, M Schuszter, L Dobos, G Ballai Materials Science and Engineering: B 90 (1-2), 67-71, 2002 | 12 | 2002 |
| Contribution to the Impedance Analysis of GaAs–Electrolyte Junctions Á Nemcsics physica status solidi (a) 173 (2), 405-415, 1999 | 12 | 1999 |
| To the understanding of the formation of the III–V based droplet epitxial nanorings Á Nemcsics, A Stemmann, J Takács Microelectronics Reliability 52 (2), 430-433, 2012 | 11 | 2012 |
