| Field plated, gate work function engineered AlGaN channel HEMTs with improved DC, RF and power performance PS Sreelekshmi, J Jacob Micro and Nanostructures 168, 207330, 2022 | 8 | 2022 |
| Design and analysis of dopingless 1T DRAM using work function engineered tunnel field effect transistors AV Arun, PS Sreelekshmi, J Jacob Microelectronics Journal 124, 105433, 2022 | 6 | 2022 |
| Investigations on Performance Parameters of Hybrid Perovskite Solar Cells KS Pavu, PS Sreelekshmi, J Jacob 2022 IEEE International Conference on Signal Processing, Informatics …, 2022 | 3 | 2022 |
| Hetero dielectric based dual material gate AlGaN channel MISHEMT for enhanced electrical characteristics PS Sreelekshmi, J Jacob Microelectronics Journal, 106465, 2024 | | 2024 |
| Implementation of an Efficient Charge Pump using Gate All Around Nanowire TFET for Energy Harvesting Applications AV Arun, PS Sreelekshmi, J Jacob 2024 28th International Symposium on VLSI Design and Test (VDAT), 1-6, 2024 | | 2024 |
| Impact of Gate Dielectrics on Electrical Characteristics of p-GaN Gate Enhancement Mode MISHEMT PS Sreelekshmi, J Jacob 2024 1st International Conference on Trends in Engineering Systems and …, 2024 | | 2024 |
| State of the Art Tunnel FETs for Low Power Memory Applications AV Arun, PS Sreelekshmi, J Jacob Advanced Ultra Low‐Power Semiconductor Devices: Design and Applications, 131-163, 2023 | | 2023 |
| Performance Evaluation of p-GaN Gate Enhancement Mode HEMT with Back Barriers PS Sreelekshmi, J Jacob 2022 International Conference on Innovative Trends in Information Technology …, 2022 | | 2022 |
