| Sub-7-nm textured ZrO2 with giant ferroelectricity KW Huang, SH Yi, YS Jiang, WC Kao, YT Yin, D Beck, V Korolkov, ... Acta Materialia 205, 116536, 2021 | 40 | 2021 |
| Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment KW Huang, TJ Chang, CY Wang, SH Yi, CI Wang, YS Jiang, YT Yin, ... Materials Science in Semiconductor Processing 109, 104933, 2020 | 21 | 2020 |
| Evolution of pronounced ferroelectricity in Hf 0.5 Zr 0.5 O 2 thin films scaled down to 3 nm CI Wang, HY Chen, CY Wang, TJ Chang, YS Jiang, CS Chang, MJ Chen Journal of Materials Chemistry C 9 (37), 12759-12767, 2021 | 20 | 2021 |
| Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0. 5Zr0. 5O2 with large remnant polarization and low thermal budget CI Wang, CY Wang, TJ Chang, YS Jiang, JJ Shyue, HC Lin, MJ Chen Applied Surface Science 570, 151152, 2021 | 19 | 2021 |
| Atomic tailoring of low-thermal-budget and nearly wake-up-free ferroelectric Hf0. 5Zr0. 5O2 nanoscale thin films by atomic layer annealing TJ Chang, YS Jiang, SH Yi, CY Chou, CI Wang, HC Lin, MJ Chen Applied Surface Science 591, 153110, 2022 | 18 | 2022 |
| Sharp Transformation across Morphotropic Phase Boundary in Sub‐6 nm Wake‐Up‐Free Ferroelectric Films by Atomic Layer Technology CH Chuang, TY Wang, CY Chou, SH Yi, YS Jiang, JJ Shyue, MJ Chen Advanced Science 10 (32), 2302770, 2023 | 11 | 2023 |
| Wake-up free Hf0. 5Zr0. 5O2 thin film with enhanced ferroelectricity and reliability synthesized by atomic layer crystallization induced by substrate biasing CY Chou, HY Chen, YS Jiang, HC Lin, MJ Chen Acta Materialia 228, 117762, 2022 | 9 | 2022 |
| Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors YS Jiang, KW Huang, SH Yi, CI Wang, TJ Chang, WC Kao, CY Wang, ... Journal of the European Ceramic Society 42 (15), 6997-7003, 2022 | 8 | 2022 |
| Operation bandwidth of negative capacitance characterized by the frequency response of capacitance magnification in ferroelectric/dielectric stacks YS Jiang, YE Jeng, YT Yin, KW Huang, TJ Chang, CI Wang, YT Chao, ... Journal of Materials Chemistry C 9 (4), 1401-1409, 2021 | 8 | 2021 |
| Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films HY Chen, YS Jiang, CH Chuang, CL Mo, TY Wang, HC Lin, MJ Chen Nanotechnology 35 (10), 105201, 2023 | 6 | 2023 |
| Atomic layer epitaxy of twinned TiN by hydrogen-manipulated tailoring on monolayer YS Jiang, M Shiojiri, JJ Shyue, MJ Chen Acta Materialia 268, 119750, 2024 | 5 | 2024 |
| Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography TJ Chang, TY Wang, CI Wang, YS Jiang, CY Chou, WC Kao, MJ Chen Journal of Materials Chemistry C 9 (26), 8285-8293, 2021 | 5 | 2021 |
| Enhancement of Dielectric Properties of Nanoscale HfO2 Thin Films Via Atomic Layer Bombardment YT Yin, YS Jiang, YT Lin, TJ Chang, HC Lin, MJ Chen ACS Applied Electronic Materials 2 (8), 2440-2448, 2020 | 5 | 2020 |
| Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for enhancement of reliability and electrical performance of high-k gate stacks CI Wang, TJ Chang, YT Yin, YS Jiang, JJ Shyue, MJ Chen ACS Applied Electronic Materials 2 (4), 891-897, 2020 | 5 | 2020 |
| Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm CY Chou, CL Mo, CP Chuu, TY Wang, CC Huang, CH Hou, CH Chuang, ... Chemistry of Materials 35 (3), 1107-1115, 2023 | 3 | 2023 |
| Alternating multi-pulse atomic layer deposition for dopant tailoring in sub-10 nm ferroelectric thin films TY Wang, CH Chuang, CL Mo, YS Jiang, JJ Shyue, J Shieh, MJ Chen Materials Today Chemistry 43, 102459, 2025 | | 2025 |
| Robust energy storage density and negative capacitance in antiferroelectric heterostructures grown by atomic layer epitaxy YS Jiang, YH Chao, M Shiojiri, YT Yin, MJ Chen Journal of Materials Chemistry A 12 (41), 28211-28223, 2024 | | 2024 |
| Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf0.5Zr0.5O2 Grown by Atomic Layer Epitaxy YS Jiang, WE Lin, M Shiojiri, YT Yin, YC Su, CH Nien, CF Hsu, VDH Hou, ... Small, 2408278, 0 | | |
