| Investigation of Ta2O5 as an Alternative High- Dielectric for InAlN/GaN MOS-HEMT on Si S Kumar, H Kumar, S Vura, AS Pratiyush, VS Charan, SB Dolmanan, ... IEEE Transactions on Electron Devices 66 (3), 1230-1235, 2019 | 22 | 2019 |
| Monolithic Epitaxial Integration of β-Ga2O3 with 100 Si for Deep Ultraviolet Photodetectors S Vura, UU Muazzam, V Kumar, SC Vanjari, R Muralidharan, N Digbijoy, ... ACS Applied Electronic Materials 4 (4), 1619-1625, 2022 | 15 | 2022 |
| Scandium-based ohmic contacts to InAlN/GaN heterostructures on silicon VS Charan, S Vura, R Muralidharan, S Raghavan, DN Nath IEEE Electron Device Letters 42 (4), 497-500, 2021 | 7 | 2021 |
| Compensation dopant-free GaN-on-Si HEMTs with a polarization engineered buffer for RF applications A Gowrisankar, VS Charan, H Chandrasekar, A Venugopalarao, ... IEEE Transactions on Electron Devices 70 (4), 1622-1627, 2023 | 5 | 2023 |
| TMAH Pretreatment to Minimize Ohmic Contact Resistance in InAlN/GaN-on-Si RF HEMTs VS Charan, A Venugopalarao, S Vura, R Muralidharan, S Raghavan, ... IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| 20.2 GHz‐µm fT–LG in InAlN/GaN‐on‐Si High Electron Mobility Transistors VS Charan, R Muralidharan, S Raghavan, DN Nath physica status solidi (a) 219 (21), 2100858, 2022 | 1 | 2022 |
| Nanocrystalline Diamond Lateral Overgrowth for High Thermal Conductivity Contact to Unseeded Diamond Surface D Francis, X Ji, SC Vanjari, M Tadjer, T Feygelson, JS Lundh, H Masten, ... ECS Transactions 113 (7), 15, 2024 | | 2024 |
| Low Interface Resistance in Epitaxial β-Ga2O3 Vertical Power Diodes on Silicon (100) Using TiN Buffer M Mehta, Y Pattipati, AR Singh, RSS Ventrapragada, SC Vanjari, R Kant, ... ACS Applied Electronic Materials 6 (3), 2084-2092, 2024 | | 2024 |
| 3D diamond growth for GaN cooling and TBR reduction D Francis, SC Vanjari, X Ji, T Feygelson, J Spencer, H Masten, A Jacobs, ... CS Mantech Conf. Proc, 2024 | | 2024 |
| AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier for RF Applications A Gowrisankar, SC Vanjari, A Bardhan, A Venugopalarao, ... 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022 | | 2022 |
| Investigation of Ta2O5 as an alternative high\k {appa} dielectric for InAlN/GaN MOS HEMT on Si S Kumar, H Kumar, S Vura, AS Pratiyush, VS Charan, SB Dolmanan, ... arXiv preprint arXiv:1806.03291, 2018 | | 2018 |
