| IGBT history, state-of-the-art, and future prospects N Iwamuro, T Laska IEEE Transactions on Electron Devices 64 (3), 741-752, 2017 | 338 | 2017 |
| Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTs N Iwamuro, A Okamoto, S Tagami, H Motoyama IEEE transactions on electron devices 38 (2), 303-309, 1991 | 79 | 1991 |
| Investigations of SiC MOSFET short-circuit failure mechanisms using electrical, thermal, and mechanical stress analyses K Yao, H Yano, H Tadano, N Iwamuro IEEE Transactions on Electron Devices 67 (10), 4328-4334, 2020 | 67 | 2020 |
| Coexistence of small threshold voltage instability and high channel mobility in 4H-SiC (0001) metal–oxide–semiconductor field-effect transistors M Okamoto, Y Makifuchi, M Iijima, Y Sakai, N Iwamuro, H Kimura, ... Applied Physics Express 5 (4), 041302, 2012 | 59 | 2012 |
| Low on-resistance wide band gap semiconductor device and method for producing the same N Iwamuro US Patent 8,564,028, 2013 | 57* | 2013 |
| Experimental and numerical demonstration and optimized methods for SiC trench MOSFET short-circuit capability M Namai, J An, H Yano, N Iwamuro 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 43 | 2017 |
| Insulated gate thyristor Y Harada, N Iwamuro, T Iwaana US Patent 6,054,728, 2000 | 42 | 2000 |
| A new vertical IGBT structure with a monolithic over-current, over-voltage, and over-temperature sensing and protecting circuit N Iwamuro, Y Harada, T Yamazaki, N Kumagai, Y Seki IEEE Electron Device Letters 16 (9), 399-401, 1995 | 42 | 1995 |
| 1200-V Low-Loss IGBT Module With Low Noise Characteristics and High Controllability Y Onozawa, M Otsuki, N Iwamuro, S Miyashita, T Miyasaka, Y Seki, ... IEEE Transactions on Industry Applications 43 (2), 513-519, 2007 | 41 | 2007 |
| A new IGBT with a monolithic over-current protection circuit Y Seki, Y Harada, N Iwamuro, N Kumagai Proceedings of the 6th International Symposium on Power Semiconductor …, 1994 | 41 | 1994 |
| Insulated gate thyristor N Iwamuro, Y Harada US Patent 5,914,503, 1999 | 40 | 1999 |
| Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage M Namai, J An, H Yano, N Iwamuro Japanese journal of applied physics 57 (7), 074102, 2018 | 39 | 2018 |
| Experimental demonstration on superior switching characteristics of 1.2 kV SiC SWITCH-MOS R Aiba, M Okawa, T Kanamori, H Yano, N Iwamuro, Y Kobayashi, ... 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 36 | 2019 |
| A study of EST's short-circuit SOA N Iwamuro, MS Shekar, BJ Baliga [1993] Proceedings of the 5th International Symposium on Power Semiconductor …, 1993 | 35 | 1993 |
| Investigation of robustness capability of− 730 V P-channel vertical SiC power MOSFET for complementary inverter applications J An, M Namai, H Yano, N Iwamuro IEEE Transactions on Electron Devices 64 (10), 4219-4225, 2017 | 34 | 2017 |
| Shape control and roughness reduction of SiC trenches by high-temperature annealing Y Kawada, T Tawara, S Nakamura, T Tamori, N Iwamuro Japanese Journal of Applied Physics 48 (11R), 116508, 2009 | 30 | 2009 |
| Characterization of near-interface traps at 4H-SiC metal–oxide–semiconductor interfaces using modified distributed circuit model X Zhang, D Okamoto, T Hatakeyama, M Sometani, S Harada, R Kosugi, ... Applied Physics Express 10 (6), 064101, 2017 | 29 | 2017 |
| Semiconductor device N Iwamuro US Patent 8,431,991, 2013 | 28 | 2013 |
| Dual gate MOS thyristor (DGMOT) Y Seki, N Iwamuro [1993] Proceedings of the 5th International Symposium on Power Semiconductor …, 1993 | 27 | 1993 |
| Demonstration of superior electrical characteristics for 1.2 kV SiC Schottky barrier diode-wall integrated trench MOSFET with higher Schottky barrier height metal R Aiba, K Matsui, M Baba, S Harada, H Yano, N Iwamuro IEEE Electron Device Letters 41 (12), 1810-1813, 2020 | 25 | 2020 |
