| Short-Circuit Protection Circuits for Silicon Carbide Power Transistors DP Sadik, J Colmenares, G Tolstoy, D Peftitsis, M Babkowski, ... IEEE Transactions on Industrial Electronics 63 (4), 1995 - 2004, 2012 | 185 | 2012 |
| Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs DP Sadik, J Colmenares, D Peftitsis, JK Lim, J Rabkowski, HP Nee 2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013 | 107 | 2013 |
| High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules J Colmenares, D Peftitsis, J Rabkowski, DP Sadik, G Tolstoy, HP Nee IEEE Transactions on Industry Applications 51 (6), 4664-4676, 2015 | 74 | 2015 |
| Analysis of parasitic elements of SiC power modules with special emphasis on reliability issues DP Sadik, K Kostov, J Colmenares, F Giezendanner, P Ranstad, HP Nee IEEE Journal of emerging and selected Topics in Power Electronics 4 (3), 988-995, 2016 | 68 | 2016 |
| Design, operation, and loss characterization of a 1-kW GaN-based three-level converter at cryogenic temperatures CB Barth, T Foulkes, O Azofeifa, J Colmenares, K Coulson, N Miljkovic, ... IEEE Transactions on Power Electronics 35 (11), 12040-12052, 2020 | 55 | 2020 |
| Experimental characterization of enhancement mode gallium-nitride power field-effect transistors at cryogenic temperatures J Colmenares, T Foulkes, C Barth, T Modeert, RCN Pilawa-Podgurski 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016 | 45 | 2016 |
| Experimental evaluation of a 1 kW, single-phase, 3-level gallium nitride inverter in extreme cold environment C Barth, J Colmenares, T Foulkes, K Coulson, J Sotelo, T Modeer, ... 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 717-723, 2017 | 38 | 2017 |
| Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection DP Sadik, J Colmenares, D Peftitsis, G Tolstoy, J Rabkowski, HP Nee 2014 16th European Conference on Power Electronics and Applications, 1-10, 2014 | 35 | 2014 |
| Dual-function gate driver for a power module with SiC junction field-effect transistors J Colmenares, D Peftitsis, J Rabkowski, HP Nee 2013 IEEE ECCE Asia Downunder (ECCE Asia), 245-250, 2013 | 31 | 2013 |
| An IGBT turn-on concept offering low losses under motor drive dv/dt constraints based on diode current adaption E Velander, L Kruse, T Wiik, A Wiberg, J Colmenares, HP Nee IEEE transactions on power electronics 33 (2), 1143-1153, 2017 | 29 | 2017 |
| Reliability analysis of a high-efficiency SiC three-phase inverter J Colmenares, DP Sadik, P Hilber, HP Nee IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 996 …, 2016 | 29 | 2016 |
| High-efficiency three-phase inverter with SiC MOSFET power modules for motor-drive applications J Colmenares, D Peftitsis, G Tolstoy, D Sadik, HP Nee, J Rabkowski 2014 IEEE Energy Conversion Congress and Exposition (ECCE), 468-474, 2014 | 29 | 2014 |
| Switching performance of parallel-connected power modules with SiC MOSFETs J Colmenares, D Peftitsis, HP Nee, J Rabkowski 2014 International Power Electronics Conference (IPEC-Hiroshima 2014-ECCE …, 2014 | 24 | 2014 |
| Comparison of thermal stress during short-circuit in different types of 1.2-kV SiC transistors based on experiments and simulations DP Sadik, J Colmenares, JK Lim, M Bakowski, HP Nee IEEE Transactions on Industrial Electronics 68 (3), 2608-2616, 2020 | 23 | 2020 |
| An experimental analysis on how the dead-time of SiC BJT and SiC MOSFET impacts the losses in a high-frequency resonant converter G Tolstoy, P Ranstad, J Colmenares, D Peftitsis, F Giezendanner, ... 2014 16th European Conference on Power Electronics and Applications, 1-10, 2014 | 14 | 2014 |
| High-temperature passive components for extreme environments J Colmenares, S Kargarrazi, H Elahipanah, HP Nee, CM Zetterling 2016 IEEE 4th workshop on wide bandgap power devices and applications (WiPDA …, 2016 | 13 | 2016 |
| Introduction of SiC MOSFETs in converters based on Si IGBTs DP Sadik, J Colmenares, JH Jürgensen, HP Nee, F Giezendanner, ... 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE …, 2017 | 8 | 2017 |
| High-efficiency power conversion using silicon carbide power electronics HP Nee, J Rabkowski, D Peftitsis, G Tolstoy, J Colmenares, DP Sadik, ... Materials Science Forum 778, 1083-1088, 2014 | 7 | 2014 |
| Reliability analysis of a high-efficiency SiC three-phase inverter for motor drive applications J Colmenares, DP Sadik, P Hilber, HP Nee 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 746-753, 2016 | 6 | 2016 |
| Experimental evaluation of SiC BJTs and SiC MOSFETs in a series-loaded resonant converter G Tolstoy, P Ranstad, J Colmenares, F Giezendanner, HP Nee 2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015 | 5 | 2015 |
Hans-Peter NeeProfessor power electronics在 kth.se 的电子邮件经过验证
