| Threading defect elimination in GaN nanowires SD Hersee, AK Rishinaramangalam, MN Fairchild, L Zhang, P Varangis Journal of Materials Research 26 (17), 2293-2298, 2011 | 163 | 2011 |
| GaN nanowire light emitting diodes based on templated and scalable nanowire growth process SD Hersee, M Fairchild, AK Rishinaramangalam, MS Ferdous, L Zhang, ... Electronics Letters 45 (1), 75-76, 2009 | 115 | 2009 |
| Nonpolar -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth A Rashidi, M Monavarian, A Aragon, A Rishinaramangalam, D Feezell IEEE Electron Device Letters 39 (4), 520-523, 2018 | 114 | 2018 |
| Carrier dynamics and electro-optical characterization of high-performance GaN/InGaN core-shell nanowire light-emitting diodes M Nami, IE Stricklin, KM DaVico, S Mishkat-Ul-Masabih, ... Scientific reports 8 (1), 501, 2018 | 86 | 2018 |
| High-speed nonpolar InGaN/GaN LEDs for visible-light communication A Rashidi, M Monavarian, A Aragon, S Okur, M Nami, ... IEEE Photonics Technology Letters 29 (4), 381-384, 2017 | 79 | 2017 |
| Transport characterization in nanowires using an electrical nanoprobe AA Talin, F Leonard, AM Katzenmeyer, BS Swartzentruber, ST Picraux, ... Semiconductor Science and Technology 25 (2), 024015, 2010 | 79 | 2010 |
| Si-doped β-(Al0. 26Ga0. 74) 2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy P Ranga, A Rishinaramangalam, J Varley, A Bhattacharyya, D Feezell, ... Applied Physics Express 12 (11), 111004, 2019 | 73 | 2019 |
| Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes M Monavarian, A Rashidi, AA Aragon, SH Oh, AK Rishinaramangalam, ... Applied Physics Letters 112 (4), 2018 | 71 | 2018 |
| Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes A Rashidi, M Nami, M Monavarian, A Aragon, K DaVico, F Ayoub, ... Journal of Applied Physics 122 (3), 2017 | 63 | 2017 |
| Delta-doped β-Ga2O3 thin films and β-(Al0. 26Ga0. 74) 2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy P Ranga, A Bhattacharyya, A Rishinaramangalam, YK Ooi, MA Scarpulla, ... Applied Physics Express 13 (4), 045501, 2020 | 60 | 2020 |
| Electrically injected GHz-class GaN/InGaN core–shell nanowire-based μLEDs: carrier dynamics and nanoscale homogeneity M Nami, A Rashidi, M Monavarian, S Mishkat-Ul-Masabih, ... Acs Photonics 6 (7), 1618-1625, 2019 | 56 | 2019 |
| Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN S Mishkat-Ul-Masabih, TS Luk, A Rishinaramangalam, M Monavarian, ... Applied Physics Letters 112 (4), 2018 | 42 | 2018 |
| Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy M Nami, RF Eller, S Okur, AK Rishinaramangalam, S Liu, I Brener, ... Nanotechnology 28 (2), 025202, 2016 | 39 | 2016 |
| Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire AK Rishinaramangalam, M Nami, MN Fairchild, DM Shima, ... Applied Physics Express 9 (3), 032101, 2016 | 35 | 2016 |
| Internal quantum efficiency and carrier dynamics in semipolar (20 21) InGaN/GaN light-emitting diodes S Okur, M Nami, AK Rishinaramangalam, SH Oh, SP DenBaars, S Liu, ... Optics express 25 (3), 2178-2186, 2017 | 34 | 2017 |
| Controlled growth of ordered III-nitride core–shell nanostructure arrays for visible optoelectronic devices AK Rishinaramangalam, SM Ul Masabih, MN Fairchild, JB Wright, ... Journal of Electronic Materials 44, 1255-1262, 2015 | 31 | 2015 |
| Experimental study of field emission from ultrasharp silicon, diamond, GaN, and tungsten tips in close proximity to the counter electrode C Lenk, S Lenk, M Holz, E Guliyev, M Hofmann, T Ivanov, IW Rangelow, ... Journal of Vacuum Science & Technology B 36 (6), 2018 | 26 | 2018 |
| GaN nanowire tips for nanoscale atomic force microscopy M Behzadirad, M Nami, AK Rishinaramagalam, DF Feezell, T Busani Nanotechnology 28 (20), 20LT01, 2017 | 25 | 2017 |
| Reduction of reverse‐leakage current in selective‐area‐grown GaN‐based core–shell nanostructure LEDs using AlGaN layers AK Rishinaramangalam, M Nami, DM Shima, G Balakrishnan, ... physica status solidi (a) 214 (5), 1600776, 2017 | 16 | 2017 |
| High-speed nonpolar InGaN/GaN superluminescent diode with 2.5 GHz modulation bandwidth A Rashidi, AK Rishinaramangalam, AA Aragon, S Mishkat-Ul-Masabih, ... IEEE Photonics Technology Letters 32 (7), 383-386, 2020 | 15 | 2020 |
Daniel FeezellUniversity of New Mexico在 unm.edu 的电子邮件经过验证
