Horizontal heterojunction integration via template-Assisted selective epitaxy ST Šuran Brunelli, A Goswami, B Markman, HY Tseng, M Rodwell, ... Crystal Growth & Design 19 (12), 7030-7035, 2019 | 19 | 2019 |
Selective and confined epitaxial growth development for novel nano-scale electronic and photonic device structures ST Šuran Brunelli, B Markman, A Goswami, HY Tseng, S Choi, ... Journal of Applied Physics 126 (1), 2019 | 16 | 2019 |
Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films S Chatterjee, S Khalid, HS Inbar, A Goswami, FC de Lima, A Sharan, ... Physical Review B 99 (12), 125134, 2019 | 16 | 2019 |
Antiphase boundary free InP microridges on (001) silicon by selective area heteroepitaxy B Shi, A Goswami, AA Taylor, ST Suran Brunelli, C Palmstrøm, J Klamkin Crystal Growth & Design 20 (12), 7761-7770, 2020 | 15 | 2020 |
Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy S Chatterjee, S Khalid, HS Inbar, A Goswami, T Guo, YH Chang, E Young, ... Science Advances 7 (16), eabe8971, 2021 | 9 | 2021 |
Controlling facets and defects of InP nanostructures in confined epitaxial lateral overgrowth A Goswami, ST Šuran Brunelli, B Markman, AA Taylor, HY Tseng, ... Physical Review Materials 4 (12), 123403, 2020 | 9 | 2020 |
In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz fτ and 256 GHz fmax B Markman, STŠ Brunelli, A Goswami, M Guidry, MJW Rodwell IEEE Journal of the Electron Devices Society 8, 930-934, 2020 | 9 | 2020 |
Tunneling-triggered bipolar action in junctionless tunnel field-effect transistor S Gundapaneni, A Goswami, O Badami, R Cuduvally, A Konar, M Bajaj, ... Applied Physics Express 7 (12), 124302, 2014 | 8 | 2014 |
Sn/InAs Josephson junctions on selective area grown nanowires with in situ shadowed superconductor evaporation A Goswami, SR Mudi, C Dempsey, P Zhang, H Wu, B Zhang, WJ Mitchell, ... Nano Letters 23 (16), 7311-7318, 2023 | 5 | 2023 |
Towards merged-element transmons using Si fins: the FinMET A Goswami, AP McFadden, HS Inbar, R Zhao, CR McRae, CJ Palmstrom, ... arXiv preprint arXiv:2108.11519, 2021 | 4* | 2021 |
Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: The case of topological half-Heusler S Chatterjee, FC de Lima, JA Logan, Y Fang, H Inbar, A Goswami, ... Physical Review Materials 5 (12), 124207, 2021 | 3 | 2021 |
Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties A Goswami, B Markman, STŠ Brunelli, S Chatterjee, J Klamkin, ... Journal of Applied Physics 130 (8), 2021 | 3 | 2021 |
Quantum yield in polymer wrapped single walled carbon nanotubes: a computational model DM Djokić, A Goswami Nanotechnology 28 (46), 465204, 2017 | 3 | 2017 |
Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique AP McFadden, A Goswami, M Seas, CRH McRae, R Zhao, DP Pappas, ... Journal of Applied Physics 128 (11), 2020 | 2 | 2020 |
Molecular beam epitaxy growth of ferromagnetic MnSb on InGaSb: Characterization of orientation, interfaces, and magnetic properties C Dempsey, J Dong, H Inbar, A Engel, A Goswami, YH Chang, ... APS March Meeting Abstracts 2022, W12. 002, 2022 | 1 | 2022 |
Assessing the Impact of Fabrication Variations on Josephson Travelling Wave Parametric Amplifiers A Lombo, K Peng, E Bui, A Goswami, W Oliver, K O'Brien Bulletin of the American Physical Society, 2024 | | 2024 |
Probing Kinetic Inductance in Thin Niobium Diselenide (NbSe2) through Microwave Measurements S Zaman, J Wang, M Tanaka, T Werkmeister, M Hays, D Rodan Legrain, ... Bulletin of the American Physical Society, 2024 | | 2024 |
Precise patterning of graphene for voltage-tunable Josephson Junctions P Mercader Perez, D Rodan-Legrain, J Wang, R Assouly, M Hays, ... Bulletin of the American Physical Society, 2024 | | 2024 |
Characterization of encapsulated superconducting microwave resonators A Goswami, S Zaman, A Lombo, P Perez, K Grossklaus, T Orlando, ... Bulletin of the American Physical Society, 2024 | | 2024 |
Optimized Backgate Design for Enhancing Coherence Times in Graphene Gatemons D Rodan Legrain, J Wang, P Mercader-Pérez, R Assouly, M Hays, ... Bulletin of the American Physical Society, 2024 | | 2024 |